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Nexperia USA Inc. PMDXB590UPEZ
- Part No.:
- PMDXB590UPEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMDXB590UPEZ.pdf
- Description:
- MOSFET 2P-CH 20V 0.57A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,525
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Product details
Overview
PMDXB590UPEZ from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for high-side load switching and relay driving in space-constrained DC-DC and power management circuits. It features −20 V drain-source voltage rating, 590 mΩ typical RDS(on) at VGS = −4.5 V and ID = −1.2 A, and ESD protection >2 kV HBM.
For engineers reviewing the PMDXB590UPEZ datasheet, PMDXB590UPEZ pinout, PMDXB590UPEZ application, or PMDXB590UPEZ equivalent, this device is selected for ultra-compact dual high-side switching where low threshold voltage (−0.7 V typ), fast switching (tr = 3 ns, tf = 3.7 ns), and thermal performance on FR4 PCBs are critical.
Technical Context
This dual P-channel MOSFET integrates two independent Trench-based FETs in a single 1.1 mm × 1.0 mm × 0.37 mm leadless package. Each channel supports −20 V VDS, −8 V VGS, and operates with gate threshold voltage of −0.7 V (typ) at 25 °C, enabling direct interface with 3.3 V logic controllers.
Thermal design is enabled by low junction-to-solder-point resistance (21 K/W typ) and normalized power derating curves up to 150 °C junction temperature. The device uses symmetric pinning (S1/G1/D1 and S2/G2/D2) with shared drain terminals (pins 6 & 7 for D1, pins 3 & 8 for D2), supporting parallel layout for current sharing or independent dual-switch configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for high-side switch applications in 12 V and 15 V systems. |
| RDS(on) | 590 mΩ (typ) at VGS = −4.5 V, ID = −1.2 A - Enables <1.2 W conduction loss per channel at 1.2 A DC load. |
| VGS(th) | −0.7 V (typ) at ID = −250 µA - Ensures reliable turn-on with 3.3 V GPIO without level shifting. |
| QG(tot) | 0.6 nC (typ) - Supports >1 MHz switching with low gate drive power in PWM load control. |
| tr/tf | 3 ns / 3.7 ns - Minimizes switching transition losses in high-frequency DC-DC and LED dimming. |
| ESD HBM | >2 kV - Provides robust handling during board assembly and system integration without extra protection. |
| Rth(j-sp) | 21 K/W (typ) - Allows 6 W total power dissipation when mounted on 1 cm² drain pad, critical for thermally dense layouts. |
Pinout & Package
DFN1010B-6 (SOT1216) is a 1.1 mm × 1.0 mm × 0.37 mm leadless, thermally enhanced plastic package with exposed drain pads on both sides. Its ultra-small footprint and 0.35 mm pitch support high-density routing in wearables, IoT sensors, and portable power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source of transistor TR1 - Connected to load return path; common reference for first high-side switch. |
| 2 | G1 | Gate of transistor TR1 - Controlled by microcontroller GPIO; requires no external pull-up due to low VGS(th). |
| 3 | D2 | Drain of transistor TR2 - Shared with pin 8; used for high-current output routing to second load. |
| 4 | S2 | Source of transistor TR2 - Independent return path for second switched load; enables dual isolated outputs. |
| 5 | G2 | Gate of transistor TR2 - Electrically isolated from G1; allows independent timing or synchronized control. |
| 6 & 7 | D1 | Drain of transistor TR1 - Shared with pin 6 and 7; provides redundant bonding for lower inductance and higher current capability. |
| 3 & 8 | D2 | Drain of transistor TR2 - Shared with pin 3 and 8; identical layout advantage as D1 for thermal and electrical performance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small DFN1010B-6 package | 1.1 mm × 1.0 mm footprint - Reduces PCB area by >60% vs. comparable SO-8 dual MOSFETs. |
| Trench MOSFET technology | Optimized cell structure delivering 590 mΩ RDS(on) at −4.5 V - Enables efficient operation from 3.3 V logic supplies. |
| Low VGS(th) | −0.45 V to −1 V range - Guarantees turn-on with standard CMOS outputs, eliminating need for gate drivers in low-power apps. |
| Fast switching | 3 ns rise time and 3.7 ns fall time - Limits overlap conduction loss in synchronous buck or half-bridge topologies. |
| ESD robustness | >2 kV HBM - Eliminates requirement for external TVS diodes in handheld and battery-powered designs. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing electromechanical relays in PLC I/O modules and industrial sensor interfaces. IC Role / Device Role / Timing Role: Dual high-side switch controlling coil current paths with independent enable signals. Use Value: Eliminates relay bounce, extends lifetime beyond 10⁷ cycles, and reduces actuation delay to sub-microsecond levels. |
Use Scenario: Driving differential signaling lines in USB-C accessory detection or low-voltage LVDS-like bus termination. IC Role / Device Role / Timing Role: Fast-turning load switches managing pull-up/pull-down states on bidirectional data lines. Use Value: Achieves <10 ns edge control with matched RDS(on) between channels, minimizing signal skew and reflection. |
| High-Side Load Switch | Switching Power Circuit |
|
Use Scenario: Power gating for MCU peripherals (e.g., sensors, radios) in battery-powered edge nodes. IC Role / Device Role / Timing Role: Dual independent high-side switches enabling selective power domain isolation. Use Value: Delivers <1 µA quiescent current per channel and <100 ns response to enable commands, extending battery life. |
Use Scenario: Synchronous rectification in compact 5 V/3.3 V buck converters for portable medical devices. IC Role / Device Role / Timing Role: Complementary high-side switch paired with external low-side N-MOSFET in discrete sync-buck stage. Use Value: 590 mΩ RDS(on) and 0.6 nC QG reduce conduction + switching losses to <2.5% efficiency penalty at 1 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LSD-13 | Single-channel P-MOSFET in SO-8; RDS(on) = 120 mΩ @ −4.5 V but larger footprint and no dual integration. | Requires two devices and extra PCB area for dual-load control; lacks integrated thermal symmetry. | Choose only if higher current (>2 A per channel) or SO-8 rework compatibility is mandatory. |
| PSMN2R0-30YLC | Single 30 V P-MOSFET in LFPAK56; RDS(on) = 2.0 mΩ @ −10 V but needs −10 V gate drive and has no dual configuration. | Not pin-compatible; unsuitable for space-constrained dual-switch designs without redesign. | Select only for high-current (>5 A), high-efficiency applications where gate drive voltage ≥ −8 V is available. |
Compared with DMN6016LSD-13 and PSMN2R0-30YLC, PMDXB590UPEZ delivers dual-channel integration in 1.1 mm², eliminates layout duplication, and enables true 3.3 V logic compatibility-making it optimal for miniaturized, low-voltage, dual-load power management.
Availability
PMDXB590UPEZ is available at Aetrix Electronics and suitable for relay driver modules, high-speed line interface boards, and high-side load switch designs requiring stable component supply across consumer, industrial, and IoT production programs.
Supply support for PMDXB590UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.
The PMDXB590UPEZ belongs to Nexperia's TrenchMOS dual P-channel portfolio, engineered specifically for ultra-compact, low-voltage power switching in battery-powered and space-constrained applications.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient?
At Tamb = 100 °C with standard FR4 mounting (single-sided copper, 1 cm² drain pad), the maximum continuous drain current per channel is −1.5 A. This value is derived from the normalized current derating curve (Figure 3) and confirmed in Table 5 under limiting values for Tsp = 100 °C.
Does PMDXB590UPEZ support gate drive from 1.8 V logic?
No. With VGS(th) ranging from −0.45 V to −1 V, the device begins conducting at 1.8 V logic, but RDS(on) exceeds 1.97 Ω at VGS = −1.8 V (Table 7), resulting in excessive conduction loss. Reliable switching requires ≥ −2.5 V gate drive; −4.5 V is recommended for full performance.
How are pins 6 and 7 electrically connected internally?
Pins 6 and 7 are bonded to the same internal drain node (D1) of transistor TR1. They are not separate terminals but redundant connections to reduce bond wire inductance and improve thermal conduction from the die to the PCB via the shared exposed pad.
Can PMDXB590UPEZ be used in automotive applications?
No. The datasheet does not specify AEC-Q101 qualification, and Nexperia's legal disclaimers explicitly state that non-automotive qualified products like PMDXB590UPEZ are not tested or warranted for automotive use. It is intended for industrial, consumer, and IoT applications only.
PMDXB590UPEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 570mA (Ta), 2.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 770mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 53.5pF @ 10V
- Power - Max:
- 280mW (Ta), 6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMDXB590UPEZ FAQ
1.How can I place an order for PMDXB590UPEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDXB590UPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDXB590UPEZ reliable?
The price and inventory of PMDXB590UPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDXB590UPEZ is usually 5 days.
3.What payment methods are accepted for PMDXB590UPEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDXB590UPEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDXB590UPEZ?
PMDXB590UPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDXB590UPEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDXB590UPEZ?
For technical support, including PMDXB590UPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDXB590UPEZ requirements.
6.How does Aetrix verify that PMDXB590UPEZ is sourced from the original manufacturer or authorized distributors?
All PMDXB590UPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDXB590UPEZ meets industry standards.
7.What is the process for return or replacement of PMDXB590UPEZ?
All PMDXB590UPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDXB590UPEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDXB590UPEZ part is unused and in its original packaging.
Return procedure for PMDXB590UPEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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