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Nexperia USA Inc. PMDXB600UNELZ
- Part No.:
- PMDXB600UNELZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMDXB600UNELZ.pdf
- Description:
- MOSFET 2N-CH 20V 0.6A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,931
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMDXB600UNELZ from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, rated for 20 V drain-source voltage, 600 mA continuous drain current per transistor at 25 °C, and 470 mΩ typical RDS(on) at VGS = 4.5 V. It serves as a compact low-side load switch or high-speed line driver in space-constrained portable electronics.
For engineers reviewing the PMDXB600UNELZ datasheet, PMDXB600UNELZ pinout, PMDXB600UNELZ application, or PMDXB600UNELZ equivalent, this device is selected for ultra-small-footprint dual-switching functions requiring low gate charge (0.4–0.7 nC), ESD protection >1 kV HBM, and thermal performance enabled by an exposed drain pad on FR4 PCBs.
Technical Context
This dual MOSFET integrates two independent N-channel Trench devices sharing no internal connection-each with discrete source, gate, and drain terminals. Its operation relies on gate threshold voltage (0.45–0.95 V) enabling logic-level drive from 1.2 V to 4.5 V microcontrollers.
Thermal design is supported by low junction-to-solder-point resistance (27–31 K/W) and normalized power derating curves showing 40% Ptot retention at 125 °C ambient. Safe operating area (SOA) is defined up to 2.5 A peak drain current for 10 µs pulses at VDS ≤ 10 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - supports 12 V rail switching and 5 V logic-compatible loads without breakdown risk. |
| RDS(on) | 470 mΩ typ @ VGS = 4.5 V, ID = 600 mA - enables <100 mW conduction loss per channel at rated current. |
| QG(tot) | 0.4–0.7 nC - ensures fast switching (<60 ns total transition time) with minimal gate drive power. |
| VGS(th) | 0.45–0.95 V - allows reliable turn-on from 1.8 V and 3.3 V I/O domains without level shifting. |
| ID (cont) | 600 mA per transistor @ Tamb = 25 °C - sufficient for LED drivers, sensor biasing, and peripheral enable switches. |
| ESD HBM | >1 kV - provides robustness against handling discharge during SMT assembly and board handling. |
| Rth(j-sp) | 27–31 K/W - enables direct thermal coupling to PCB copper, critical for sustained 380 mW dissipation in thin-profile designs. |
Pinout & Package
Package: DFN1010B-6 (SOT1216), 1.1 × 1.0 × 0.37 mm, leadless, ultra-thin, with exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source of transistor TR1 - connects to ground or low-side return path for first switch. |
| 2 | G1 | Gate of transistor TR1 - driven by MCU GPIO or logic buffer; requires no external pull-down due to low leakage. |
| 3 | D2 | Drain of transistor TR2 - connects to load supply; shares thermal pad with D1 for uniform heat spreading. |
| 4 | S2 | Source of transistor TR2 - independently routed to avoid crosstalk between switched loads. |
| 5 | G2 | Gate of transistor TR2 - electrically isolated from G1; supports asynchronous dual-channel control. |
| 6 | D1 | Drain of transistor TR1 - primary high-current output node; soldered to 1 cm² copper pad for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.1 × 1.0 mm body - fits within 1.35 × 1.2 mm reflow footprint, enabling dense multi-switch layouts on wearables and IoT sensors. |
| Exposed drain pad | Integral thermal path to PCB - reduces Rth(j-a) by >30% vs. standard DFN, sustaining 380 mW at 100 °C ambient. |
| Low VGS(th) distribution | 0.45–0.95 V - guarantees turn-on across full temperature range (-55 to 150 °C) with 1.8 V logic drivers. |
| Low gate charge asymmetry | QGD/QG(tot) ≈ 25% - minimizes Miller-induced switching delay and improves dv/dt immunity in noisy environments. |
| Sub-1 µA IDSS | ≤25 nA @ VDS = 5 V - ensures negligible standby current in battery-powered always-on circuits. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing electromechanical relays in smart home controllers to reduce size, bounce, and acoustic noise. IC Role / Device Role / Timing Role: Dual low-side switch controlling coil current paths for two independent relay circuits. Use Value: 600 mA per channel supports 5 V/12 V relay coils; 470 mΩ RDS(on) limits self-heating to <100 mW, eliminating heatsinks. |
Use Scenario: Driving differential clock or data lines in USB-C accessories and portable audio interfaces. IC Role / Device Role / Timing Role: Active termination switch enabling dynamic impedance matching and signal integrity control. Use Value: 9.2 ns rise time and 51 ns fall time support >10 MHz toggle rates; low Ciss (21.3 pF) minimizes capacitive loading on high-Z sources. |
| Low-Side Load Switch | Switching Circuit |
|
Use Scenario: Power gating individual subsystems (e.g., BLE radio, display backlight) in coin-cell–powered medical patches. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent power domain control with minimal quiescent current. Use Value: 1 µA max IDSS and sub-µA gate leakage ensure <1 µA total off-state current per channel, extending battery life beyond 1 year. |
Use Scenario: Implementing synchronous rectification or bidirectional current sensing in compact DC-DC modules. IC Role / Device Role / Timing Role: Paired N-channel FETs configured as half-bridge legs or current mirror elements. Use Value: Matched RDS(on) tolerance (±30%) and identical thermal resistance allow balanced current sharing without external balancing resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on) (600 mΩ typ), larger 2 × 2 mm SO-8 package, no exposed thermal pad. | Less suitable for ultra-thin portable designs; better for prototyping due to through-hole compatibility. | Select when board space permits larger footprint and thermal requirements are less stringent. |
| NTJD4152PZ | Lower VDS (12 V), smaller 1.0 × 1.0 mm DFN package, but only 350 mA ID rating and higher RDS(on) (850 mΩ). | Restricted to 3.3 V systems; insufficient for 5 V relay or 12 V load switching. | Choose only for sub-3.3 V logic-controlled loads where 600 mA capability is not required. |
Compared with PMDXB600UNELZ, DMN2020LSD-13 trades miniaturization for ease of hand-soldering and higher voltage margin, while NTJD4152PZ sacrifices current capacity and voltage rating to achieve marginally smaller size-neither matches the 20 V/600 mA/470 mΩ/DFN1010B combination in a thermally optimized package.
Availability
PMDXB600UNELZ is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and compact switching circuits requiring stable component supply across consumer, industrial, and medical electronics programs.
Supply support for PMDXB600UNELZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.
The PMDXB600UNELZ belongs to Nexperia's TrenchMOS® dual-FET product line, engineered specifically for space-constrained portable electronics needing dual-channel switching with minimal thermal footprint and logic-level drive compatibility.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient?
The PMDXB600UNELZ delivers 400 mA per transistor at Tamb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal resistance constraints on standard FR4 PCBs with single-sided 1 cm² drain pad copper, and aligns with the normalized current curve in Figure 3.
Can both transistors be used in parallel for higher current?
No-PMDXB600UNELZ transistors are electrically isolated with separate source, gate, and drain terminals; paralleling requires external matching of VGS(th) and RDS(on), which is not guaranteed. The device is designed for independent dual-channel operation, not current stacking.
Is the DFN1010B-6 package compatible with standard reflow profiles?
Yes-the DFN1010B-6 (SOT1216) package is qualified for JEDEC J-STD-020D-compliant reflow. Figure 20 specifies the recommended solder land pattern (1.35 × 1.2 mm), and Nexperia confirms compatibility with peak temperatures up to 260 °C for ≤30 seconds.
Does the device include integrated gate resistors or ESD protection diodes?
No-PMDXB600UNELZ has no internal gate resistors or clamp diodes. ESD protection (>1 kV HBM) is built into the gate oxide structure per IEC 61000-4-2, but external gate series resistors (e.g., 10–100 Ω) and TVS diodes are recommended for high-noise industrial environments.
PMDXB600UNELZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 600mA
- Rds On (Max) @ Id, Vgs:
- 620mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21.3pF @ 10V
- Power - Max:
- 380mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMDXB600UNELZ FAQ
1.How can I place an order for PMDXB600UNELZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDXB600UNELZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDXB600UNELZ reliable?
The price and inventory of PMDXB600UNELZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDXB600UNELZ is usually 5 days.
3.What payment methods are accepted for PMDXB600UNELZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDXB600UNELZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDXB600UNELZ?
PMDXB600UNELZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDXB600UNELZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDXB600UNELZ?
For technical support, including PMDXB600UNELZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDXB600UNELZ requirements.
6.How does Aetrix verify that PMDXB600UNELZ is sourced from the original manufacturer or authorized distributors?
All PMDXB600UNELZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDXB600UNELZ meets industry standards.
7.What is the process for return or replacement of PMDXB600UNELZ?
All PMDXB600UNELZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDXB600UNELZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDXB600UNELZ part is unused and in its original packaging.
Return procedure for PMDXB600UNELZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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