My Inquiry
My Account
Nexperia USA Inc. PMDXB600UNEZ
- Part No.:
- PMDXB600UNEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMDXB600UNEZ.pdf
- Description:
- MOSFET 2N-CH 20V 0.6A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:82,484
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMDXB600UNEZ from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for low-side switching and high-speed line driving. It delivers 600 mA per channel at VGS = 4.5 V, with RDS(on) = 470 mΩ (typ), 20 V VDS rating, and ESD protection >1 kV HBM - deployed in compact relay driver circuits and portable load-switching applications.
For engineers reviewing the PMDXB600UNEZ datasheet, PMDXB600UNEZ pinout, PMDXB600UNEZ application, or PMDXB600UNEZ equivalent, this device supports space-constrained designs requiring dual-channel logic-level drive, thermal-efficient PCB mounting via exposed drain pad, and stable sub-1 A switching with minimal gate charge (QG(tot) = 0.4–0.7 nC).
Technical Context
This dual MOSFET integrates two independent N-channel Trench devices sharing no internal connection - each with separate gate, source, and drain terminals. Its ultra-small 1.1 × 1.0 × 0.37 mm footprint uses an exposed drain pad for direct thermal conduction to PCB copper, enabling 4025 mW Ptot when soldered to a 1 cm² drain pad.
It operates with gate thresholds of 0.45–0.95 V (VGS(th)), supports ±8 V VGS, and exhibits low dynamic capacitances (Ciss = 21.3 pF, Coss = 5.4 pF), enabling fast switching (tr = 9.2 ns, tf = 51 ns) under 6 Ω external gate resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum blocking voltage per transistor; defines safe operation in 12 V rail and automotive accessory circuits. |
| RDS(on) | 470 mΩ (typ) at VGS = 4.5 V, ID = 600 mA - enables <100 mW conduction loss per channel at rated current. |
| ID | 600 mA continuous per transistor at Tamb = 25 °C - sufficient for LED drivers, sensor interface switches, and microcontroller-peripheral loads. |
| QG(tot) | 0.4–0.7 nC - low gate charge reduces drive power and allows direct GPIO control without buffer stages. |
| Rth(j-sp) | 27–31 K/W - junction-to-solder-point thermal resistance confirms efficient heat transfer through exposed drain pad to PCB. |
| VGS(th) | 0.45–0.95 V - logic-level compatible with 1.2–1.8 V MCUs and ensures turn-on below standard LDO output voltages. |
| Ciss | 21.3 pF - input capacitance supports >10 MHz switching with minimal Miller effect in digital signal routing. |
Pinout & Package
Package: DFN1010B-6 (SOT1216), 1.1 × 1.0 × 0.37 mm, leadless, ultra-thin, with exposed drain pad on underside for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor TR1 - connects to ground or low-side return path for first channel. |
| 2 | G1 | Gate terminal of transistor TR1 - accepts logic-level drive; requires no level-shifting for 1.8 V–4.5 V controllers. |
| 3 | D2 | Drain terminal of transistor TR2 - connects to load supply; shares thermal pad with D1 for uniform heat spreading. |
| 4 | S2 | Source terminal of transistor TR2 - electrically isolated from S1; enables independent low-side switching paths. |
| 5 | G2 | Gate terminal of transistor TR2 - fully decoupled from G1; supports asynchronous dual-channel control. |
| 6 | D1 | Drain terminal of transistor TR1 - primary high-current output node; soldered to PCB thermal pad for dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables low RDS(on) and high transconductance (gfs = 1 S) in sub-1 mm² footprint. |
| Exposed drain pad | Reduces Rth(j-a) to 285–330 K/W on FR4, supporting 4025 mW total power dissipation with proper layout. |
| ESD robustness | HBM rating >1 kV ensures handling survivability and system-level immunity in unshielded consumer assemblies. |
| Ultra-thin profile | 0.37 mm max height enables use in wearables, hearing aids, and stacked PCB modules where Z-height is constrained. |
| Binary marking code | "00 10 00" identifies PMDXB600UNEZ on-device; supports automated optical inspection and traceability. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing electromechanical relays in battery-powered IoT sensors to reduce size, bounce, and power consumption. IC Role / Device Role / Timing Role: Dual low-side switch controlling coil energization and status LED independently. Use Value: 470 mΩ RDS(on) limits coil drive loss to <285 mW at 600 mA, extending coin-cell life by >30% versus discrete alternatives. |
Use Scenario: Driving differential clock or data lines between FPGA and ADC in portable test equipment. IC Role / Device Role / Timing Role: High-speed enable/disable switch for signal path isolation during power-down sequencing. Use Value: 9.2 ns rise time and 51 ns fall time ensure clean edge integrity up to 20 MHz toggle rates without overshoot. |
| Low-Side Load Switch | Switching Circuits |
|
Use Scenario: Power gating peripheral ICs (e.g., Bluetooth SoC, display driver) in smartwatch firmware-controlled sleep modes. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent power domain control per subsystem. Use Value: VGS(th) as low as 0.45 V guarantees reliable turn-on with 1.2 V core rail outputs, eliminating need for gate boosters. |
Use Scenario: Implementing compact DC-DC converter synchronous rectification or PWM motor control in drone ESC modules. IC Role / Device Role / Timing Role: Dual N-channel switch operating in complementary or parallel configuration for current sharing. Use Value: 2.5 A peak drain current (IDM) supports short-duration surge loads without thermal runaway in 2-layer PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on) (550 mΩ typ), larger 2 × 2 mm SO-8 package, no exposed drain pad. | Less suitable for ultra-compact thermal-limited designs; better for hand-soldered prototyping. | Select when board area >2 mm² is available and thermal pad layout is impractical. |
| AO6402 | Lower VDS (20 V same), higher ID (2 A), larger TSOP-6 package (2.9 × 1.6 mm), QG(tot) = 3.5 nC. | Requires stronger gate drive; not suitable for direct GPIO switching at 1.8 V. | Choose only if >1 A continuous current per channel is required and layout space permits. |
Compared with DMN2020LSD-13 and AO6402, PMDXB600UNEZ offers the smallest footprint, lowest gate charge, and best thermal performance per unit area - making it optimal for miniaturized battery-powered systems where size, efficiency, and logic-level compatibility are jointly critical.
Availability
PMDXB600UNEZ is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line driver interfaces, and low-side load switch implementations requiring stable component supply across production lifecycles.
Supply support for PMDXB600UNEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and manufacturability.
PMDXB600UNEZ belongs to Nexperia's TrenchMOS® dual-FET portfolio, engineered specifically for space-constrained consumer and portable electronics needing dual-channel logic-level switching with minimal thermal overhead.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient temperature?
At Tamb = 100 °C, the maximum continuous drain current per transistor is 400 mA, as specified in Table 5 (Limiting values). This derating reflects thermal constraints on the FR4 PCB layout with single-sided 1 cm² drain pad; actual current depends on board copper area and airflow.
Does PMDXB600UNEZ support 1.2 V gate drive reliably?
Yes - its gate threshold voltage ranges from 0.45 V (min) to 0.95 V (max) at Tj = 25 °C. At 1.2 V VGS, RDS(on) remains ≤845 mΩ (typ) at ID = 100 mA, ensuring functional turn-on for low-power control signals without external level shifters.
How is thermal performance affected if the exposed drain pad is not soldered?
Without soldering the exposed drain pad, Rth(j-a) degrades to ~475 K/W (vs. 285–330 K/W with pad), reducing maximum allowable power dissipation to ~265 mW. This limits continuous ID to ~230 mA per channel at 25 °C ambient - insufficient for rated 600 mA operation.
Are the two MOSFETs internally isolated or share any substrate connection?
The two N-channel transistors are fully isolated - no shared drain, source, or substrate connection. Pin assignments (Table 2) confirm independent D1/S1/G1 and D2/S2/G2 terminals. This enables true dual-channel operation in separate signal paths or floating configurations.
PMDXB600UNEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchFET®
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 600mA
- Rds On (Max) @ Id, Vgs:
- 620mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21.3pF @ 10V
- Power - Max:
- 265mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMDXB600UNEZ FAQ
1.How can I place an order for PMDXB600UNEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDXB600UNEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDXB600UNEZ reliable?
The price and inventory of PMDXB600UNEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDXB600UNEZ is usually 5 days.
3.What payment methods are accepted for PMDXB600UNEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDXB600UNEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDXB600UNEZ?
PMDXB600UNEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDXB600UNEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDXB600UNEZ?
For technical support, including PMDXB600UNEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDXB600UNEZ requirements.
6.How does Aetrix verify that PMDXB600UNEZ is sourced from the original manufacturer or authorized distributors?
All PMDXB600UNEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDXB600UNEZ meets industry standards.
7.What is the process for return or replacement of PMDXB600UNEZ?
All PMDXB600UNEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDXB600UNEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDXB600UNEZ part is unused and in its original packaging.
Return procedure for PMDXB600UNEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMDXB600UNEZ Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
