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Nexperia USA Inc. PMDXB950UPELZ
- Part No.:
- PMDXB950UPELZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMDXB950UPELZ.pdf
- Description:
- MOSFET 2P-CH 20V 0.5A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:33,028
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Product details
Overview
PMDXB950UPELZ from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for high-side load switching and relay driving. It features 20 V drain-source voltage rating, 1.02 Ω RDS(on) at VGS = −4.5 V / ID = −500 mA, −0.7 V typical gate threshold voltage, and an ultra-compact 1.1 × 1.0 × 0.37 mm footprint with exposed drain pad for thermal conduction.
For engineers reviewing the PMDXB950UPELZ datasheet, PMDXB950UPELZ pinout, PMDXB950UPELZ application, or PMDXB950UPELZ equivalent, key selection criteria include dual-channel P-channel topology, low RDS(on) at logic-level gate drive, thermal performance on FR4 PCBs, and compatibility with space-constrained portable and battery-powered systems.
Technical Context
This dual P-channel MOSFET integrates two independent enhancement-mode transistors sharing no internal connection-each with separate source, gate, and drain terminals. Its Trench MOSFET architecture enables low gate charge (1.19 nC typical) and fast switching (td(on) = 2.3 ns, tf = 6 ns), supporting high-frequency load control in compact DC-DC and power management circuits.
The device operates with gate-source voltage range of ±8 V and exhibits robust thermal behavior: Rth(j-sp) = 27–31 K/W to solder point and normalized RDS(on) drift of ≤1.25× from −60 °C to 150 °C, enabling stable operation across industrial ambient conditions without active cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage per transistor; supports 12 V rail switching with 67 % safety margin. |
| RDS(on) | 1.02 Ω @ VGS = −4.5 V, ID = −500 mA - Enables <100 mW conduction loss at 500 mA, critical for battery runtime. |
| VGS(th) | −0.7 V typ - Ensures reliable turn-on with 1.8 V logic outputs; sub-1 V threshold reduces gate drive complexity. |
| QG(tot) | 1.19 nC typ - Low gate charge minimizes driver power and enables >1 MHz PWM operation with minimal switching loss. |
| ID | −500 mA continuous @ Tamb = 25 °C - Sustains 500 mA per channel on standard FR4 with 1 cm² drain pad. |
| Rth(j-sp) | 27 K/W typ - Efficient heat transfer to PCB copper, allowing >3.5 W pulsed power dissipation via solder-point thermal path. |
| Ciss | 43 pF - Low input capacitance reduces gate drive current demand and improves EMI profile in high-speed switching. |
Pinout & Package
DFN1010B-6 (SOT1216) is a leadless, ultra-thin surface-mount package measuring 1.1 × 1.0 × 0.37 mm with an exposed drain pad for thermal conduction. The 6-terminal layout uses a dual-transistor configuration with shared physical footprint but electrically isolated channels.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor TR1; connects to load return path or ground reference for first channel. |
| 2 | G1 | Gate terminal of TR1; accepts logic-level negative control signal to enable high-side switching. |
| 3 | D2 | Drain terminal of TR2; connects to supply rail or switched output node for second channel. |
| 4 | S2 | Source terminal of TR2; independently routed to isolate second load's return path. |
| 5 | G2 | Gate terminal of TR2; enables independent control of second high-side switch. |
| 6 | D1 | Drain terminal of TR1; ties to main power rail, sharing thermal pad with D2 for uniform heat spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.1 × 1.0 mm body area - saves >70 % board space vs. SO-8 dual MOSFETs; ideal for wearables and IoT sensors. |
| Exposed drain pad | Thermal resistance to solder point as low as 27 K/W - enables passive thermal management without heatsinks on FR4. |
| ESD protection | >1 kV HBM - eliminates need for external ESD diodes in handheld and portable equipment interfaces. |
| Low leakage | IDSS ≤ −1 µA @ VDS = −20 V, Tj = 25 °C - preserves battery charge during deep-sleep modes in always-on devices. |
| Trench MOSFET process | RDS(on) × QG = 1.2 nΩ·nC - achieves optimal conduction/switching trade-off for efficiency-critical 3.3 V/5 V systems. |
Applications
| Relay Driver | High-Side Load Switch |
|---|---|
Use Scenario: Replacing electromechanical relays in PLC I/O modules and smart home controllers to reduce size, bounce, and lifetime failure. IC Role / Device Role / Timing Role: Dual P-channel MOSFET acts as solid-state replacement for SPDT relay contacts, controlling two independent loads from a single compact footprint. Use Value: Eliminates mechanical wear and contact arcing; supports >10⁶ cycles vs. 10⁵ for relays while reducing PCB area by 85 %. |
Use Scenario: Power sequencing and load isolation in USB-C PD adapters, portable medical monitors, and battery-backed memory modules. IC Role / Device Role / Timing Role: Each channel functions as a controlled high-side switch, enabling independent ON/OFF control of 3.3 V or 5 V subsystems. Use Value: Achieves <100 µA quiescent current in OFF state and <100 mΩ effective on-resistance at 500 mA, minimizing standby loss and voltage drop. |
| High-Speed Line Driver | Switching Circuit |
Use Scenario: Driving capacitive bus lines (e.g., I²C pull-up, sensor interface buses) requiring fast edge rates and low shoot-through risk. IC Role / Device Role / Timing Role: Configured as complementary pair with external N-channel or used individually for active pull-down with controlled slew rate. Use Value: 6 ns fall time and 5 ns rise time ensure clean transitions on 400 kHz I²C buses; low Coss (14 pF) prevents signal distortion. |
Use Scenario: DC-DC converter synchronous rectification, LED dimming, and motor direction control in compact consumer electronics. IC Role / Device Role / Timing Role: Dual-channel topology allows half-bridge configuration or independent PWM-controlled loads without cross-conduction risk. Use Value: 1.02 Ω RDS(on) limits conduction loss to 255 mW at 500 mA, enabling >92 % efficiency in 5 V → 3.3 V buck stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC3025LSD-13 | 25 V rating, 2.5 mΩ RDS(on), SO-8 package (3.9 × 4.9 mm) | Higher current capacity (−6.5 A), but 15× larger footprint and requires gate driver for 3.3 V logic | Select when >1 A load current or higher thermal mass is needed; not suitable for space-constrained designs. |
| SI2305DS-T1-BE3 | Single P-channel, 20 V, 55 mΩ RDS(on), SOT-23 (2.9 × 1.6 mm) | Lower RDS(on) but only one channel; requires two devices and extra routing for dual-load control | Choose for cost-sensitive single-load applications where board area is less constrained than component count. |
Compared with PMDXB950UPELZ, DMC3025LSD-13 delivers higher current but sacrifices miniaturization, while SI2305DS-T1-BE3 reduces on-resistance at the expense of channel count and layout efficiency-making PMDXB950UPELZ optimal for dual-load, space-limited, logic-level-driven systems.
Availability
PMDXB950UPELZ is available at Aetrix Electronics and suitable for relay driver circuits, high-side load switching, high-speed line driving, and compact switching circuits requiring stable component supply and consistent parametric performance across production batches.
Supply support for PMDXB950UPELZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.
PMDXB950UPELZ belongs to Nexperia's TrenchMOS® dual P-channel portfolio, engineered specifically for space-constrained, battery-efficient applications demanding low RDS(on), logic-level gate drive, and robust thermal performance on standard PCBs.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient temperature?
The PMDXB950UPELZ supports −300 mA continuous drain current per channel at Tamb = 100 °C with standard FR4 mounting (single-sided copper, 1 cm² drain pad). This derating reflects thermal limits under sustained operation without forced airflow or additional copper layers.
Does PMDXB950UPELZ require a gate resistor for safe switching?
A gate resistor is recommended to control dV/dt and suppress ringing, especially in high-frequency PWM applications. With QG = 1.19 nC and typical driver output impedance, a 10 Ω series resistor limits peak gate current to <500 mA and ensures stable turn-on/turn-off timing per datasheet test conditions.
Can both channels be paralleled to increase current handling?
No-PMDXB950UPELZ channels are electrically isolated but not matched for parallel operation. Their VGS(th) tolerance (−0.45 V to −0.95 V) and RDS(on) variation (1.02–1.4 Ω) cause unequal current sharing; dedicated dual-die packages with matched parameters are required for paralleling.
Is the exposed drain pad internally connected to both D1 and D2 terminals?
Yes-the exposed thermal pad is electrically tied to both D1 (pin 6) and D2 (pin 3) terminals. Per Nexperia's SOT1216 mechanical drawing and thermal test setup, the pad must be soldered to a common copper pour to achieve specified Rth(j-sp) and power dissipation ratings.
PMDXB950UPELZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA
- Rds On (Max) @ Id, Vgs:
- 1.4Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 43pF @ 10V
- Power - Max:
- 380mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMDXB950UPELZ FAQ
1.How can I place an order for PMDXB950UPELZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDXB950UPELZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDXB950UPELZ reliable?
The price and inventory of PMDXB950UPELZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDXB950UPELZ is usually 5 days.
3.What payment methods are accepted for PMDXB950UPELZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDXB950UPELZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDXB950UPELZ?
PMDXB950UPELZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDXB950UPELZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDXB950UPELZ?
For technical support, including PMDXB950UPELZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDXB950UPELZ requirements.
6.How does Aetrix verify that PMDXB950UPELZ is sourced from the original manufacturer or authorized distributors?
All PMDXB950UPELZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDXB950UPELZ meets industry standards.
7.What is the process for return or replacement of PMDXB950UPELZ?
All PMDXB950UPELZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDXB950UPELZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDXB950UPELZ part is unused and in its original packaging.
Return procedure for PMDXB950UPELZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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