Nexperia USA Inc. PMDXB950UPEZ

Overview

PMDXB950UPEZ from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for high-side load switching and relay driving in space-constrained portable electronics. It delivers R_DS(on) = 1.02 Ω at V_GS = −4.5 V, supports −20 V drain-source voltage, −500 mA continuous drain current per channel, and features an exposed drain pad for thermal conduction.

For engineers reviewing the PMDXB950UPEZ datasheet, PMDXB950UPEZ pinout, PMDXB950UPEZ application, or PMDXB950UPEZ equivalent, this device is selected for ultra-compact dual high-side switching where low gate charge (Q_G(tot) = 1.19 nC), ESD protection >1 kV HBM, and thermal resistance R_th(j-sp) = 27 K/W are critical design factors.

Technical Context

This dual P-channel MOSFET integrates two independent enhancement-mode transistors sharing no internal connection-each with separate source, gate, and drain terminals. Its Trench MOSFET architecture enables low R_DS(on) and fast switching (t_d(on) = 2.3 ns, t_f = 6 ns) under −4.5 V gate drive, optimized for logic-level control from 3.3 V or 5 V microcontrollers.

The DFN1010B-6 package uses an exposed drain pad soldered directly to PCB copper for thermal management, supporting 4025 mW peak power dissipation when mounted on a 1 cm² drain pad. Gate threshold voltage (V_GS(th)) ranges from −0.45 V to −0.95 V, ensuring reliable turn-on with modest negative gate bias.

Key Specifications

Pinout & Package

Package: DFN1010B-6 (SOT1216), 1.1 × 1.0 × 0.37 mm, leadless, ultra-thin surface-mount package with exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel high-side switching applications.

Compared with PMDXB950UPEZ, DMC2038LVT trades 0.18 Ω higher R_DS(on) for greater surge robustness, while SI3993DV offers marginally lower conduction loss but omits integrated ESD protection-making PMDXB950UPEZ optimal for space- and reliability-critical portable designs.

Availability

PMDXB950UPEZ is available at Aetrix Electronics and suitable for portable medical monitors, battery-powered IoT endpoints, and compact industrial controllers requiring stable component supply with guaranteed long-term sourcing.

Supply support for PMDXB950UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic components, with core competencies in MOSFETs, ESD protection, and logic ICs.

The PMDXB950UPEZ belongs to Nexperia's TrenchMOS dual P-channel portfolio, engineered specifically for ultra-compact, thermally efficient high-side switching in battery-operated and space-constrained applications.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

At T_amb = 100 °C, the maximum continuous drain current per channel is −300 mA, as specified in Table 5 (Limiting values). This derating accounts for thermal resistance and junction temperature limits; operation above this requires active cooling or reduced duty cycle.

Can PMDXB950UPEZ be used with 3.3 V GPIO for gate control?

Yes-its V_GS(th) range (−0.45 V to −0.95 V) ensures full enhancement with 3.3 V logic when referenced to source. A −3.3 V gate drive (i.e., GPIO pulled low while source is at system V_DD) achieves V_GS = −3.3 V, well within the −4.5 V test condition for R_DS(on).

Is the exposed drain pad electrically connected to any pin?

Yes-the exposed drain pad is internally connected to both D1 (pin 6) and D2 (pin 3), forming a common thermal and electrical node. It must be soldered to a dedicated PCB copper pour to achieve specified R_th(j-sp) and power dissipation ratings.

Does PMDXB950UPEZ include body diode conduction capability?

Yes-each transistor includes an intrinsic source-drain diode with V_SD = −0.7 V to −1.2 V at I_S = −115 mA. This enables reverse-current freewheeling in inductive load applications, though forward conduction is limited by the P-channel structure and should be verified against safe operating area curves.