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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PMF280UN,115

Name: PMF280UN,115
Brand: NXP Semiconductors
SKU: PMF280UN,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMF280UN,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: PMF280UN,115.pdf

Description:: MOSFET N-CH 20V 1.02A SOT323-3

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Product details

Overview

PMF280UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT323 (SC-70) package, designed for ultra-low-level switching in space-constrained portable systems. It delivers R_DS(on) ≤ 340 mΩ at V_GS = 4.5 V, V_DS ≤ 20 V, I_D ≤ 1.02 A, and P_tot ≤ 0.56 W - enabling efficient load switching in battery-powered consumer electronics.

For engineers reviewing the PMF280UN datasheet, PMF280UN pinout, PMF280UN application, or PMF280UN equivalent, this device is selected for low-threshold, low-R_DS(on) DC switching where footprint reduction (40% smaller than SOT23), thermal performance at solder point (R_th(j-sp) = 220 K/W), and sub-1V gate drive capability are critical design requirements.

Technical Context

The PMF280UN employs µTrenchMOS™ technology to achieve low threshold voltage (V_GS(th) = 0.45–1.0 V at T_j = 25 °C) and stable on-resistance across temperature (R_DS(on) = 448–544 mΩ at T_j = 150 °C). Its gate charge profile (Q_g(tot) = 0.89 nC, Q_gd = 0.18 nC) supports fast switching with minimal drive loss in low-voltage logic-controlled circuits.

As a single N-channel discrete MOSFET, it operates without integrated gate drivers or protection circuitry. Its source-drain diode exhibits V_SD = 0.83–1.2 V at I_S = 0.3 A and supports bidirectional current handling in simple reverse-polarity or flyback configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage compatible with 3.3 V/5 V logic-supplied rails and Li-ion battery systems (≤2S).
R_DS(on)	280–340 mΩ @ V_GS = 4.5 V, T_j = 25 °C - Enables <100 mW conduction loss at 0.3 A, suitable for always-on load switches.
V_GS(th)	0.45–1.0 V @ I_D = 0.25 mA - Ensures reliable turn-on with 1.8 V or higher GPIOs, eliminating need for level-shifting in modern microcontrollers.
I_D	1.02 A @ T_sp = 25 °C, V_GS = 4.5 V - Supports moderate-current loads such as LED drivers, sensor biasing, and peripheral enable circuits.
Q_g(tot)	0.89 nC - Low gate charge reduces driver power consumption and enables clean edge transitions in high-frequency PWM control.
C_iss	45 pF - Minimizes capacitive loading on driving GPIOs and improves noise immunity in dense PCB layouts.
R_th(j-sp)	220 K/W - Defines thermal path from junction to solder point; requires careful pad design per SC-70 footprint for sustained 0.5 W dissipation.

Pinout & Package

PMF280UN is housed in a plastic surface-mounted SOT323 (SC-70) package - 3-lead, 1.3 × 2.2 mm footprint, 40% smaller than standard SOT23. The package uses standard JEDEC SC-70 dimensions with gull-wing leads and exposed die pad not electrically connected.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts logic-level voltage (≥0.45 V) to modulate channel conduction; high-impedance input (I_GSS ≤ 100 nA).
2	Source (S)	Reference node for gate drive; connects to system ground or low-side return path; carries forward diode current when reverse-biased.
3	Drain (D)	Power output terminal; connects to load supply rail; handles up to 1.02 A continuous DC current under specified thermal conditions.

Key Features

Feature	Design Value
µTrenchMOS™ technology	Enables ultra-low R_DS(on) and V_GS(th) in SC-70 package, achieving performance previously limited to larger footprints.
Low threshold voltage	V_GS(th) down to 0.45 V ensures compatibility with 1.8 V I/O domains and eliminates external gate boosting in portable designs.
Small footprint (SOT323)	1.3 × 2.2 mm outline saves board area in wearables, hearing aids, and compact IoT sensors where space is constrained.
Low gate charge	Q_g(tot) = 0.89 nC minimizes switching energy and allows direct drive from low-power MCU GPIOs without buffer stages.
Specified R_DS(on) at low V_GS	R_DS(on) = 360–430 mΩ @ V_GS = 2.5 V and 460–660 mΩ @ V_GS = 1.8 V - enables robust operation across wide supply voltage ranges.

Applications

USB Peripheral Power Switching	Low-Voltage Sensor Bias Control
Use Scenario: Enabling/disabling USB-powered accessories (e.g., Bluetooth modules, USB-C peripherals) under host MCU control to meet USB suspend current limits. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path; responds to GPIO toggle within nanoseconds (t_d(on) = 4.5 ns). Use Value: Prevents >100 µA standby leakage by fully isolating downstream circuitry, meeting USB 2.0 suspend spec while using only 1.8 V logic.	Use Scenario: Selectively powering analog sensors (e.g., temperature, humidity) in battery-operated environmental monitors during measurement cycles only. IC Role / Device Role / Timing Role: High-efficiency, low-R_DS(on) power gate placed between battery and sensor VDD rail. Use Value: Reduces quiescent current by >95% versus always-on biasing, extending coin-cell life beyond 2 years in duty-cycled deployments.
Portable Display Backlight Enable	Reverse-Polarity Protection
Use Scenario: Controlling white LED backlight current in smartwatches and fitness trackers via PWM dimming from ARM Cortex-M0+ GPIO. IC Role / Device Role / Timing Role: Low-side PWM switch in constant-current LED driver path; handles 0.5 A peak pulses with minimal voltage drop. Use Value: Maintains >98% efficiency at 1 MHz PWM frequency due to low C_iss (45 pF) and fast t_f (5 ns), preserving display contrast and battery runtime.	Use Scenario: Protecting sensitive RF front-end ICs from accidental reverse battery insertion in handheld medical devices. IC Role / Device Role / Timing Role: N-channel MOSFET configured in ideal diode topology with gate driven by source voltage; blocks reverse current below −0.7 V. Use Value: Achieves <0.1 V forward drop (vs. 0.3 V Schottky) and zero reverse leakage, preventing damage while minimizing power loss in 3.3 V supply rails.

USB Peripheral Power Switching

Low-Voltage Sensor Bias Control

Use Scenario: Enabling/disabling USB-powered accessories (e.g., Bluetooth modules, USB-C peripherals) under host MCU control to meet USB suspend current limits.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path; responds to GPIO toggle within nanoseconds (t_d(on) = 4.5 ns).

Use Value: Prevents >100 µA standby leakage by fully isolating downstream circuitry, meeting USB 2.0 suspend spec while using only 1.8 V logic.

Use Scenario: Selectively powering analog sensors (e.g., temperature, humidity) in battery-operated environmental monitors during measurement cycles only.

IC Role / Device Role / Timing Role: High-efficiency, low-R_DS(on) power gate placed between battery and sensor VDD rail.

Use Value: Reduces quiescent current by >95% versus always-on biasing, extending coin-cell life beyond 2 years in duty-cycled deployments.

Portable Display Backlight Enable

Reverse-Polarity Protection

Use Scenario: Controlling white LED backlight current in smartwatches and fitness trackers via PWM dimming from ARM Cortex-M0+ GPIO.

IC Role / Device Role / Timing Role: Low-side PWM switch in constant-current LED driver path; handles 0.5 A peak pulses with minimal voltage drop.

Use Value: Maintains >98% efficiency at 1 MHz PWM frequency due to low C_iss (45 pF) and fast t_f (5 ns), preserving display contrast and battery runtime.

Use Scenario: Protecting sensitive RF front-end ICs from accidental reverse battery insertion in handheld medical devices.

IC Role / Device Role / Timing Role: N-channel MOSFET configured in ideal diode topology with gate driven by source voltage; blocks reverse current below −0.7 V.

Use Value: Achieves <0.1 V forward drop (vs. 0.3 V Schottky) and zero reverse leakage, preventing damage while minimizing power loss in 3.3 V supply rails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 200 mΩ @ V_GS = 4.5 V; SOT23-3 package (larger footprint); V_GS(th) = 0.5–1.2 V.	Higher current rating (2.8 A) but requires more PCB area; less suitable for ultra-compact wearables.	Select when higher I_D headroom and lower R_DS(on) outweigh footprint constraints.
AO3400	R_DS(on) = 28 mΩ @ V_GS = 10 V; V_GS(th) = 0.8–1.8 V; SOT23-3; not characterized below 2.5 V.	Optimized for 3.3 V/5 V systems; unsuitable for 1.8 V GPIO drive due to higher V_GS(th) min and no R_DS(on) spec at V_GS ≤ 2.5 V.	Choose for higher-power 3.3 V applications where gate drive voltage ≥3.3 V is guaranteed.

Compared with DMN2004LK-7 and AO3400, the PMF280UN uniquely balances ultra-small SC-70 footprint, sub-0.5 V threshold, and verified R_DS(on) down to 1.8 V - making it the preferred choice for miniaturized, low-voltage, battery-sensitive designs where every mm² and µA matters.

Availability

PMF280UN is available at Aetrix Electronics and suitable for USB power management, sensor bias control, portable display backlighting, and reverse-polarity protection requiring stable component supply and long-term industrial availability.

Supply support for PMF280UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It serves automotive, industrial, computing, consumer, and wearable markets with high-volume, high-reliability components.

The PMF280UN belongs to Nexperia's µTrenchMOS™ ultra-low-level FET product line, engineered specifically for space- and power-constrained portable electronics where minimal gate drive voltage and smallest possible footprint are mandatory.

FAQ

What is the maximum continuous drain current for PMF280UN at 100 °C solder point temperature?

The PMF280UN supports a maximum continuous drain current of 0.64 A at T_sp = 100 °C and V_GS = 4.5 V, as specified in Table 3 of its datasheet. This derating reflects thermal limitations of the SOT323 package; designers must ensure adequate copper pour and airflow to sustain this current without exceeding T_j = 150 °C. The PMF280UN's R_th(j-sp) = 220 K/W defines the thermal bottleneck.

Does PMF280UN support 1.8 V GPIO drive, and what is its R_DS(on) at that voltage?

Yes, the PMF280UN is explicitly characterized for 1.8 V gate drive: Table 5 specifies R_DS(on) = 460–660 mΩ at V_GS = 1.8 V, I_D = 75 mA, and T_j = 25 °C. Its V_GS(th) minimum of 0.45 V ensures strong enhancement mode behavior even at 1.8 V, making the PMF280UN suitable for direct interface with modern ultra-low-voltage MCUs without level shifters.

What is the safe operating area (SOA) limitation for PMF280UN in DC operation?

The PMF280UN's DC safe operating area is bounded by its limiting values: V_DS ≤ 20 V, I_D ≤ 1.02 A at T_sp = 25 °C, and P_tot ≤ 0.56 W. Figure 3 confirms that DC operation must stay below the "DC" curve - for example, at V_DS = 5 V, maximum sustainable I_D is ~0.35 A to remain within 0.56 W. Exceeding this risks thermal runaway due to the PMF280UN's positive R_DS(on) temperature coefficient.

Can PMF280UN be used in reverse-polarity protection circuits, and how is its body diode rated?

Yes, the PMF280UN's integrated source-drain diode supports reverse-polarity protection when configured in high-side or ideal-diode topology. Its body diode is rated for I_S = 0.47 A DC (T_sp = 25 °C) and V_SD = 0.83–1.2 V at I_S = 0.3 A, V_GS = 0 V. This low forward voltage - combined with the PMF280UN's low R_DS(on) - makes it superior to Schottky diodes in low-dropout, low-leakage protection schemes.

Is PMF280UN RoHS compliant and halogen-free?

Yes, the PMF280UN meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's standard product compliance policy. Its SOT323 package uses lead-free matte tin plating and green molding compound. Full compliance documentation, including test reports and declarations, is available through Nexperia's official product page for PMF280UN and referenced in its material content data sheet (document number 9397 750 12768).

PMF280UN,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.02A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.89 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 45 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 560mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70

PMF280UN,115 FAQ

1.How can I place an order for PMF280UN,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMF280UN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMF280UN,115 reliable?

The price and inventory of PMF280UN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMF280UN,115 is usually 5 days.

3.What payment methods are accepted for PMF280UN,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMF280UN,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMF280UN,115?

PMF280UN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMF280UN,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMF280UN,115?

For technical support, including PMF280UN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMF280UN,115 requirements.

6.How does Aetrix verify that PMF280UN,115 is sourced from the original manufacturer or authorized distributors?

All PMF280UN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMF280UN,115 meets industry standards.

7.What is the process for return or replacement of PMF280UN,115?

All PMF280UN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMF280UN,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMF280UN,115 part is unused and in its original packaging.

Return procedure for PMF280UN,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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