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Nexperia USA Inc. PMF370XN,115
- Part No.:
- PMF370XN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
PMF370XN,115.pdf
- Description:
- MOSFET N-CH 30V 870MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:9,066
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Product details
Overview
PMF370XN from Nexperia is an N-channel TrenchMOS enhancement-mode power MOSFET in SC-70 (SOT323) package, designed for low-voltage switching with 30 V VDS, 370 mΩ RDS(on) at VGS = 4.5 V and ID = 0.2 A, 0.87 A continuous drain current, and 0.56 W power dissipation - optimized for portable appliance driver circuits.
For engineers reviewing the PMF370XN datasheet, PMF370XN pinout, PMF370XN application, or PMF370XN equivalent, this device is selected for space-constrained, low-threshold, low-power switching where gate drive voltage is limited to 4.5 V and PCB footprint reduction is critical.
Technical Context
This discrete MOSFET uses TrenchMOS technology to achieve extremely low on-state resistance and sub-1 V gate threshold voltage (0.5–1.5 V typ), enabling direct interface with 1.8 V/3.3 V logic outputs without level shifting. Its 3-pin SC-70 package supports surface-mount reflow assembly with thermal resistance Rth(j-sp) = 220 K/W.
Static characteristics include VGS(th) stability over temperature (0.35 V min at 150 °C), low leakage (≤10 µA IDSS at 150 °C), and robust safe operating area up to 1.74 A pulsed drain current - confirming suitability for intermittent load switching in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - defines absolute upper limit for blocking capability in low-voltage DC rails. |
| RDS(on) | 370–440 mΩ at VGS = 4.5 V, ID = 0.2 A, Tj = 25 °C - enables <100 mW conduction loss at 0.5 A load. |
| ID (cont) | 0.87 A at Tsp = 25 °C - specifies maximum steady-state current under standard board thermal conditions. |
| VGS(th) | 0.5–1.5 V typical - ensures reliable turn-on with 1.8 V or 3.3 V microcontroller GPIOs. |
| Ptot | 0.56 W at Tsp = 25 °C - sets thermal derating baseline for PCB copper area and ambient temperature design. |
| Ciss | 37 pF - determines gate drive energy requirement and switching speed when driven by low-current sources. |
| QG(tot) | 0.65 nC - quantifies total gate charge needed for full enhancement, critical for calculating drive loss and rise/fall times. |
Pinout & Package
SC-70 (SOT323) plastic surface-mounted package: 1.35 mm × 1.75 mm footprint, 0.65 mm pitch, 0.9 mm max height - 40 % smaller than SOT23, optimized for ultra-compact PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal accepting 0–12 V input; low 0.65 nC QG enables fast switching with weak drivers. |
| 2 | S (Source) | Reference node for gate drive and current return path; internally connected to substrate in discrete MOSFET. |
| 3 | D (Drain) | High-side or low-side power path terminal; rated for 30 V blocking and 0.87 A continuous conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 370 mΩ at 4.5 V gate drive reduces I²R losses in portable battery-switching applications. |
| Low VGS(th) | 0.5–1.5 V threshold allows direct control from 1.8 V logic without external level shifters. |
| Small SC-70 footprint | 1.35 × 1.75 mm outline saves >40 % board area versus SOT23 - critical for wearables and compact IoT nodes. |
| Surface-mount compatibility | Reflow-optimized SOT323 land pattern (0.55 mm pad width, 0.6 mm spacing) supports automated assembly. |
| Thermal performance | 220 K/W junction-to-solder-point resistance enables stable operation up to 150 °C junction temperature. |
Applications
| Portable Power Switching | Low-Voltage Logic Interface |
|---|---|
|
Use Scenario: Enabling/disabling 3.3 V or 5 V rails in Bluetooth earbuds and smart watches. IC Role / Device Role / Timing Role: Low-side load switch controlled by MCU GPIO with minimal gate drive current. Use Value: 370 mΩ RDS(on) limits voltage drop to <0.2 V at 500 mA, preserving battery runtime and rail stability. |
Use Scenario: Driving LED backlight or buzzer from 1.8 V microcontroller output in handheld medical devices. IC Role / Device Role / Timing Role: Voltage-level agnostic switch translating low-voltage logic to higher-current loads. Use Value: 0.5 V minimum VGS(th) ensures turn-on margin even with process variation and temperature drift. |
| USB Peripheral Power Control | Smart Sensor Node Load Management |
|
Use Scenario: Isolating USB VBUS-powered peripherals during sleep mode in portable test equipment. IC Role / Device Role / Timing Role: High-side or low-side disconnect switch with fast turn-off (<20 ns td(off)) for clean power sequencing. Use Value: 1.74 A pulsed IDM supports inrush current of capacitive USB loads without latch-up or thermal stress. |
Use Scenario: Cycling power to environmental sensors (e.g., humidity, pressure) in battery-operated wireless nodes. IC Role / Device Role / Timing Role: Duty-cycled power gate minimizing quiescent current between sensor readings. Use Value: ≤10 µA IDSS at 150 °C ensures <1 µA leakage during 10-day deep-sleep intervals, extending battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H023LPS-13 | RDS(on) = 230 mΩ @ 4.5 V but larger SOT-23 package (2.9 × 1.6 mm); VGS(th) = 0.5–1.2 V. | Higher current capability (2.3 A) but 2× PCB area; less suitable for ultra-compact designs. | Select when higher current headroom is required and board space permits larger footprint. |
| AO3400 | RDS(on) = 44 mΩ @ 10 V but VGS(th) = 0.8–1.8 V; requires ≥2.5 V gate drive for full enhancement. | Better conduction efficiency above 2.5 V, but marginal turn-on at 1.8 V logic levels. | Select only if system guarantees ≥2.5 V gate drive and lower RDS(on) outweighs footprint penalty. |
Compared with DMN10H023LPS-13 and AO3400, PMF370XN uniquely balances ultra-small SC-70 size, guaranteed 1.8 V logic compatibility, and 370 mΩ RDS(on) - making it optimal for space- and voltage-constrained portable switching where gate drive strength is limited.
Availability
PMF370XN is available at Aetrix Electronics and suitable for portable appliance driver circuits, low-voltage logic interface modules, and USB peripheral power control requiring stable component supply across high-mix, low-volume production runs.
Supply support for PMF370XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete, logic, and MOSFET solutions - founded in 2017 as a spin-off from Philips and now serving automotive, industrial, and consumer markets.
PMF370XN belongs to Nexperia's TrenchMOS low-level FET product line, engineered specifically for space-constrained, low-voltage switching applications where gate drive capability is limited and thermal efficiency is critical.
FAQ
Is PMF370XN suitable for 1.8 V logic-level gate drive?
Yes. With a guaranteed VGS(th) range of 0.35 V to 1.5 V and typical RDS(on) of 370 mΩ at VGS = 4.5 V, the device achieves usable conduction even at 1.8 V gate voltage - confirmed by transfer characteristics showing >100 mA drain current at VGS = 1.8 V and Tj = 25 °C.
What is the maximum continuous drain current at 85 °C ambient?
At Tsp = 85 °C, normalized current derating is ~65 % per Figure 1, yielding ~0.57 A continuous ID. This assumes standard 2-layer PCB with 1 cm² copper pour per pin; actual value depends on layout-specific thermal resistance.
Can PMF370XN be used in high-frequency PWM applications?
Yes - with 6.5 ns td(on), 9.5 ns tr, 14 ns td(off), and 5.5 ns tf, it supports PWM switching up to ~5 MHz in low-duty-cycle, low-load scenarios. Gate charge (0.65 nC) and Ciss (37 pF) confirm suitability for 1–3 MHz DC-DC bias switching with appropriate gate resistor selection.
Does PMF370XN have integrated ESD protection?
No. The datasheet does not specify HBM or CDM ESD ratings. External protection (e.g., TVS diode or series resistor) is recommended for handling-sensitive environments or exposed I/O paths, especially given its 12 V VGS absolute maximum rating.
PMF370XN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 870mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 440mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.65 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 37 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 560mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
PMF370XN,115 FAQ
1.How can I place an order for PMF370XN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMF370XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMF370XN,115 reliable?
The price and inventory of PMF370XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMF370XN,115 is usually 5 days.
3.What payment methods are accepted for PMF370XN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMF370XN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMF370XN,115?
PMF370XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMF370XN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMF370XN,115?
For technical support, including PMF370XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMF370XN,115 requirements.
6.How does Aetrix verify that PMF370XN,115 is sourced from the original manufacturer or authorized distributors?
All PMF370XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMF370XN,115 meets industry standards.
7.What is the process for return or replacement of PMF370XN,115?
All PMF370XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMF370XN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMF370XN,115 part is unused and in its original packaging.
Return procedure for PMF370XN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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