NXP Semiconductors PMF400UN,115

Overview

PMF400UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT323 (SC-70) package, designed for low-voltage switching in space-constrained portable electronics. It delivers R_DS(on) ≤ 480 mΩ at V_GS = 4.5 V, supports V_DS up to 30 V and continuous I_D up to 0.83 A at T_sp = 25 °C, and features ultra-low threshold voltage (V_GS(th) typ. 0.7 V) for efficient battery-powered load control.

For engineers reviewing the PMF400UN datasheet, PMF400UN pinout, PMF400UN application, or PMF400UN equivalent, key selection criteria include its 40% smaller footprint vs. SOT23, low 0.45–1.0 V gate threshold enabling 1.8 V logic drive, and verified thermal resistance of 220 K/W from junction to solder point - critical for thermally dense handheld PCB layouts.

Technical Context

This device uses µTrenchMOS™ technology to achieve high cell density and low on-resistance in a miniature surface-mount package. Its gate threshold voltage is specified down to 0.25 V at T_j = 150 °C, ensuring reliable turn-on across automotive and industrial temperature ranges.

The PMF400UN exhibits low dynamic parameters: C_iss = 43 pF, Q_g(tot) = 0.89 nC, and fast switching with t_d(on) = 4 ns and t_f = 4.5 ns under standard test conditions (V_DD = 15 V, R_G = 6 Ω), supporting high-frequency DC-DC and load-switching applications.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package with 3 leads; footprint occupies 40% less board area than standard SOT23.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the PMF400UN uniquely balances ultra-small SC-70 size, 1.8 V logic compatibility, and thermally manageable R_DS(on), making it optimal for space- and voltage-constrained portable designs where gate drive simplicity and board real estate are primary constraints.

Availability

PMF400UN is available at Aetrix Electronics and suitable for USB load switching, portable LED driving, smartphone power sequencing, and IoT sensor biasing requiring stable component supply and long-term manufacturability.

Supply support for PMF400UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP's Standard Products division in 2017 and headquartered in Nijmegen, Netherlands.

The PMF400UN belongs to Nexperia's µTrenchMOS™ ultra-low-level FET product line, engineered specifically for battery-powered portable electronics demanding minimal gate drive voltage, small footprint, and reliable low-current switching.

FAQ

What is the maximum drain-source voltage rating for the PMF400UN?

The PMF400UN has a maximum drain-source voltage (V_DS) rating of 30 V, tested per IEC 60134 absolute maximum ratings. This rating applies across the full operating junction temperature range (−55 °C to +150 °C) and provides design margin for transient spikes in 24 V and 12 V systems. The PMF400UN datasheet confirms this value in Table 3 under limiting values.

Can the PMF400UN be driven directly by a 1.8 V microcontroller GPIO?

Yes, the PMF400UN can be driven directly by a 1.8 V microcontroller GPIO. Its gate-source threshold voltage (V_GS(th)) is specified from 0.45 V (min) to 1.0 V (max) at T_j = 25 °C, and remains functional down to 0.25 V at 150 °C. At V_GS = 1.8 V, the PMF400UN achieves R_DS(on) ≤ 830 mΩ at I_D = 75 mA, sufficient for most low-power load-switching applications without external level-shifting circuitry.

What is the thermal resistance from junction to solder point for the PMF400UN?

The PMF400UN has a maximum thermal resistance from junction to solder point (R_th(j-sp)) of 220 K/W, as specified in Table 4 of the datasheet under thermal characteristics. This value is measured under standardized conditions and reflects heat transfer efficiency when the device is mounted on a PCB with recommended reflow footprint (Figure 15). Designers should use this parameter - not R_th(j-a) - for thermal modeling in compact, high-density layouts.

Does the PMF400UN include an integrated body diode, and what is its forward voltage?

Yes, the PMF400UN includes an inherent source-drain body diode. Its forward voltage (V_SD) is specified as 0.76–1.2 V at I_S = 0.3 A and V_GS = 0 V, per Table 5 in the datasheet. This diode enables freewheeling current paths in inductive loads and reverse-polarity protection in certain configurations, though it is not rated for continuous high-current conduction like a dedicated Schottky diode.

What are the key dynamic parameters of the PMF400UN relevant for PWM switching?

For PWM switching applications, the PMF400UN offers t_d(on) = 4 ns, t_r = 7.5 ns, t_d(off) = 18 ns, and t_f = 4.5 ns (V_DD = 15 V, R_G = 6 Ω). Its total gate charge (Q_g(tot)) is 0.89 nC, with Q_gs = 0.1 nC and Q_gd = 0.2 nC. These values - confirmed in Table 5 - enable efficient high-frequency (>100 kHz) operation while minimizing gate drive power and EMI generation in the PMF400UN's target portable applications.