NXP Semiconductors PMF77XN,115

Overview

PMF77XN from Nexperia is a single N-channel enhancement-mode Trench MOSFET in SOT323 (SC-70) package, rated for 30 V drain-source voltage, 1.63 A continuous drain current at 25 °C, and 77 mΩ typical R_DS(on) at V_GS = 4.5 V and I_D = 1.5 A. It serves as a low-side load switch or high-speed line driver in compact power management circuits.

For engineers reviewing the PMF77XN datasheet, PMF77XN pinout, PMF77XN application, or PMF77XN equivalent, this page delivers verified electrical specs, thermal behavior under FR4 PCB mounting, gate charge dynamics (Q_G(tot) = 1.9–2.9 nC), junction temperature derating curves, and real-world switching timing (t_d(on) = 8 ns, t_f = 11 ns).

Technical Context

This device uses Trench MOSFET technology to achieve low threshold voltage (V_GS(th) = 0.5–1.5 V) and fast switching with minimal gate charge. Its 3-pin SOT323 footprint supports space-constrained designs requiring sub-millisecond turn-on/turn-off transitions.

The PMF77XN operates within −55 °C to 150 °C junction temperature range and exhibits R_DS(on) increase to 154 mΩ at 150 °C - critical for thermal design in sustained-load applications. Its source-drain diode has V_SD = 0.8–1.2 V at I_S = 0.7 A, enabling bidirectional current handling in certain topologies.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: 1.3 mm × 1.8 mm × 0.95 mm body, 3-terminal leadframe, tin-plated terminations compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with PMF77XN, DMN2053UVT-7 offers lower on-resistance in a larger 6-pin package unsuitable for pin-compatible replacement, while AO3400 delivers superior current and thermal capability in a physically larger SOT-23 footprint - neither is pin-to-pin compatible, but both serve overlapping low-voltage switching roles with trade-offs in size, efficiency, and layout compatibility.

Availability

PMF77XN is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side loadswitches, and general-purpose switching circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for PMF77XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, consumer, and wearable markets.

The PMF77XN belongs to Nexperia's TrenchMOS portfolio, engineered for high-efficiency, space-constrained switching in battery-powered and signal-integrity-critical applications.

FAQ

What is the maximum continuous drain current for PMF77XN at 100 °C ambient temperature?

The PMF77XN supports 1 A continuous drain current at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limitations of the SOT323 package on standard FR4 PCBs and must be applied in enclosed or high-temperature environments. The PMF77XN datasheet confirms this value under V_GS = 4.5 V conditions.

Does PMF77XN have integrated ESD protection?

The PMF77XN does not specify integrated ESD protection in its datasheet. It meets standard human-body model (HBM) robustness per JEDEC JESD22-A114, but no dedicated ESD clamp structure or rating (e.g., ±2 kV) is documented. External TVS or series resistance is recommended for I/O lines exposed to handling or connector interfaces. The PMF77XN design prioritizes low R_DS(on) and fast switching over on-chip ESD hardening.

Can PMF77XN be used in a high-side switch configuration?

The PMF77XN is an N-channel MOSFET and is not suited for direct high-side switching without gate voltage boosting above the source potential. Its gate threshold (0.5–1.5 V) and maximum V_GS (±12 V) require V_G > V_S + V_GS(th), which cannot be met using ground-referenced drive. For high-side use, a charge pump or floating gate driver is mandatory. The PMF77XN is optimized for low-side applications per its product profile.

What is the gate charge requirement to switch PMF77XN at 1 MHz?

With Q_G(tot) = 1.9–2.9 nC and typical switching frequency of 1 MHz, the average gate drive current required is 1.9–2.9 µA (Q × f). However, peak instantaneous current during turn-on exceeds 100 mA due to capacitive charging transients. The PMF77XN gate drive must deliver ≥50 mA peak to achieve specified 8 ns t_d(on) and 11 ns t_f with 6 Ω external gate resistor.

Is PMF77XN automotive-qualified?

No, the PMF77XN is not automotive-qualified. The datasheet contains no AEC-Q101 stress test reporting or automotive-grade reliability screening. Nexperia explicitly states in legal disclaimers that non-automotive qualified products "are not suitable for automotive use" and lack qualification per automotive testing standards. For automotive applications, designers must select AEC-Q101-certified alternatives such as Nexperia's PMV21ENEA.