NXP Semiconductors PMF780SN,115

Overview

PMF780SN from Nexperia is an N-channel µTrenchMOS™ standard-level power MOSFET in SOT323 (SC-70) package, designed for low-voltage switching in space-constrained portable electronics. It delivers V_DS = 60 V, R_DS(on) ≤ 920 mΩ at V_GS = 10 V and I_D = 0.3 A, with P_tot = 0.56 W at T_sp = 25 °C - enabling compact load switching in battery-powered devices.

For engineers reviewing the PMF780SN datasheet, PMF780SN pinout, PMF780SN application, or PMF780SN equivalent, this discrete MOSFET is selected for its low on-resistance, fast switching (t_d(on) = 2 ns, t_f = 2.2 ns), small footprint (40% smaller than SOT23), and robust thermal performance (R_th(j-sp) = 220 K/W).

Technical Context

This N-channel enhancement-mode FET uses TrenchMOS™ technology to achieve high cell density and low R_DS(on) in a miniature surface-mount package. Its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.0 V at T_j = 25 °C, supporting logic-level drive from 3.3 V and 5 V microcontrollers.

The device features integrated source-drain diode (V_SD = 0.83–1.2 V at I_S = 0.3 A), low gate charge (Q_g(tot) = 1.05 nC), and tight capacitance profile (C_iss = 23 pF, C_rss = 3.5 pF), making it suitable for high-frequency switching in DC-DC converters and LED drivers.

Key Specifications

Pinout & Package

Package: SOT323 (SC-70), plastic surface-mounted, 3-lead package with 0.65 mm pitch; footprint occupies ~40% less area than standard SOT23.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMN2004LK-7 and AO3400, the PMF780SN offers optimal balance of ultra-small SC-70 footprint, adequate 60 V rating, and verified 1.05 nC gate charge - making it uniquely suitable for space-limited, battery-sensitive designs where moderate conduction loss is acceptable.

Availability

PMF780SN is available at Aetrix Electronics and suitable for portable power switching, LED backlight control, USB port protection, and IoT sensor node power gating requiring stable component supply and long-term manufacturability.

Supply support for PMF780SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, consumer, and wearable markets.

The PMF780SN belongs to Nexperia's µTrenchMOS™ standard-level FET product line, engineered specifically for compact, low-power switching in battery-operated and space-constrained electronic devices.

FAQ

What is the maximum continuous drain current for PMF780SN at 100 °C solder point temperature?

The PMF780SN supports a continuous drain current of 0.36 A at T_sp = 100 °C and V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the SOT323 package and must be applied in thermally dense layouts. The PMF780SN remains functional up to +150 °C junction temperature, but sustained operation above 100 °C requires careful PCB copper pour design.

Does PMF780SN require a gate resistor for stable switching in 3.3 V microcontroller applications?

The PMF780SN has low total gate charge (1.05 nC) and can be driven directly by most 3.3 V GPIOs without external gate resistors in low-frequency (<100 kHz) switching. However, a 10–47 Ω series gate resistor is recommended for EMI suppression and ringing control at >500 kHz. The PMF780SN's 0.2 nC Q_gs ensures predictable turn-on timing even with weak drive sources.

Can PMF780SN be used in reverse polarity protection circuits?

No - the PMF780SN is an N-channel MOSFET intended for low-side switching and lacks the internal body diode orientation required for effective reverse polarity protection. For that function, a P-channel device such as the PMV21EN or NX3008PB would be appropriate. The PMF780SN's source-drain diode conducts only from source to drain, limiting its use to forward-biased configurations.

What is the typical gate-source threshold voltage range for PMF780SN across temperature?

The PMF780SN exhibits a gate-source threshold voltage V_GS(th) of 1.0–2.0 V at T_j = 25 °C, decreasing to 0.6 V at T_j = 150 °C and rising to ≤3.5 V at T_j = −55 °C (Table 5). This negative temperature coefficient ensures stable turn-on behavior across industrial temperature ranges. The PMF780SN remains fully enhanced down to 0.6 V, supporting reliable operation in hot environments.

Is PMF780SN RoHS compliant and halogen-free?

Yes - the PMF780SN is manufactured by Nexperia to meet RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The SOT323 package uses lead-free matte tin termination and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life at ≤30 °C/60% RH. Full compliance documentation is available via Nexperia's product change notifications for PMF780SN.