Nexperia USA Inc. PMFPB8032XP,115

Overview

PMFPB8032XP from Nexperia is a P-channel enhancement-mode Trench MOSFET integrated with an ultra-low forward-voltage (320 mV typ. at 1 A) MEGA Schottky diode in a single DFN2020-6 (SOT1118) package. It delivers 3.7 A continuous drain current at V_GS = −4.5 V, 80 mΩ R_DS(on) at 25 °C, and −20 V drain-source voltage rating - optimized for compact, high-efficiency power switching in portable battery systems.

For engineers reviewing the PMFPB8032XP datasheet, PMFPB8032XP pinout, PMFPB8032XP application, or PMFPB8032XP equivalent, key selection criteria include its dual-function MOSFET–Schottky co-packaging, 1.8 V gate-threshold compatibility, exposed-drain thermal pad, and validated performance in charging switches and DC-DC converter synchronous rectification paths.

Technical Context

This device implements a monolithic integration of a P-channel Trench MOSFET and a Schottky diode sharing common terminals (anode/cathode and source/drain), enabling bidirectional current handling with intrinsic body-diode replacement. Its gate threshold voltage (−0.6 V typ.) and low R_DS(on) support efficient low-voltage gate drive down to 1.8 V.

The DFN2020-6 package features an exposed drain pad for direct thermal conduction to PCB copper, achieving 54 K/W R_th(j–sp) under optimized mounting. The Schottky diode's VF remains ≤365 mV up to 1 A and 25 °C, with reverse leakage <700 µA at 20 V and 25 °C.

Key Specifications

Pinout & Package

DFN2020-6 (SOT1118) is a 2 mm × 2 mm × 0.65 mm ultra-thin, leadless, surface-mount plastic package with an exposed drain pad on the bottom side for enhanced thermal dissipation. The top-side marking "1X" identifies the device orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET–Schottky combination applications.

Compared with DMN6016LFG-7 and SI7850DP-T1-GE3, PMFPB8032XP uniquely integrates both functions in a 2×2 mm footprint - trading minor R_DS(on) penalty for significant BOM reduction, layout simplification, and guaranteed timing alignment between MOSFET and diode.

Availability

PMFPB8032XP is available at Aetrix Electronics and suitable for charging switches, DC-DC synchronous rectifiers, and battery-driven portable power rails requiring stable component supply across consumer electronics, computing peripherals, and storage subsystems.

Supply support for PMFPB8032XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.

PMFPB8032XP belongs to Nexperia's MEGA Schottky + Trench MOSFET co-packaged product line, engineered specifically to reduce size and improve efficiency in portable power management circuits.

FAQ

What is the maximum continuous drain current for PMFPB8032XP at 100 °C ambient?

The maximum continuous drain current is −1.7 A at T_amb = 100 °C with V_GS = −4.5 V, as specified in Table 5 (Limiting Values). This derating reflects thermal limits imposed by the DFN2020-6 package's junction-to-ambient thermal resistance (99–115 K/W) and 150 °C maximum junction temperature.

Can PMFPB8032XP be used in reverse-polarity protection circuits?

Yes - connect the anode (pin 1) to the input supply, source (pin 4) to system ground, and load to drain (pin 3). The integrated Schottky blocks reverse current while the MOSFET conducts forward current with low R_DS(on). No external diode is needed, and the −0.6 V gate threshold allows direct control from low-voltage supervisors.

How does the dual-cathode pin configuration (pins 6 and 7) affect PCB layout?

Pins 6 and 7 are internally shorted cathodes of the Schottky diode and must be connected together on the PCB to the same net - typically tied to the drain node (pin 3). This redundancy improves current sharing and thermal distribution across the cathode interface, enhancing reliability in high-pulse-current applications like HDD motor braking.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is electrically connected to pin 3 (drain) and pins 6/7 (cathode), forming a single low-impedance thermal and electrical node. It must be soldered to a dedicated PCB copper pour tied to the drain net; floating or grounded pads will cause functional failure or thermal runaway.