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NXP Semiconductors PMFPB8040XP,115

Part No.:
PMFPB8040XP,115
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
6-UFDFN Exposed Pad
Datasheet:
AetrixPMFPB8040XP,115.pdf
Description:
MOSFET P-CH 20V 2.7A HUSON6
Quantity:
Payment:
Payment
Shipping:
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Inventory:98,223

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Product details

Overview

PMFPB8040XP from NXP Semiconductors is a P-channel Trench MOSFET integrated with an ultra-low forward-voltage (440 mV typ. at 1 A) MEGA Schottky diode in a single DFN2020-6 (SOT1118) package. It delivers −3.7 A continuous drain current at VGS = −4.5 V, features 80 mΩ RDS(on) at 25 °C, and operates up to −20 V drain-source voltage - optimized for battery-charging switches and DC-DC converter high-side switching in portable electronics.

For engineers reviewing the PMFPB8040XP datasheet, PMFPB8040XP pinout, PMFPB8040XP application, or PMFPB8040XP equivalent, this page provides verified technical context, validated pin functions, real-world thermal performance data, and confirmed alternative parts for power management designs requiring compact dual-function integration.

Technical Context

The PMFPB8040XP integrates two independent semiconductor elements: a P-channel enhancement-mode MOSFET with trench gate structure and a monolithically co-packaged ultra-low VF Schottky diode. Its gate threshold voltage (−0.6 V typ.) enables reliable turn-on from low-voltage logic rails (e.g., 1.8 V), while the exposed drain pad supports thermal dissipation up to 6.25 W on a 6 cm² copper pad.

Both devices share the same DFN2020-6 footprint but operate electrically isolated: the MOSFET handles bidirectional switching with source-drain body diode conduction, while the dedicated Schottky diode (cathode K, anode A) provides separate 2 A forward current capability and 30 V reverse blocking - critical for synchronous rectification and reverse-polarity protection paths.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −20 V maximum - defines safe operating voltage range for battery-input circuits up to 20 V nominal systems.
ID (continuous) −3.7 A at VGS = −4.5 V, Tamb = 25 °C - supports compact charging switches without external heatsinking under typical portable load conditions.
RDS(on) 80 mΩ typ. at VGS = −4.5 V, ID = −2.7 A, Tj = 25 °C - enables <100 mW conduction loss at 1 A, minimizing thermal rise in space-constrained layouts.
VF (Schottky) 440 mV typ. at IF = 1 A, Tj = 25 °C - reduces forward drop by ~300 mV versus standard silicon diodes, improving efficiency in buck converter freewheeling paths.
Package DFN2020-6 (SOT1118), 2 × 2 × 0.65 mm - ultra-thin leadless package with exposed drain pad for direct PCB thermal coupling and 0.20 K/W Rth(j–sp).
QG(tot) 5.7 nC typ. - enables fast switching with low gate-drive energy, supporting >1 MHz operation in high-frequency DC-DC converters.

Pinout & Package

PMFPB8040XP uses the DFN2020-6 (SOT1118) thermally enhanced plastic package: 2 mm × 2 mm × 0.65 mm body with exposed drain pad on underside. Pin numbering follows top-view orientation per datasheet Figure 24.

Pin/Terminal Circuit Role Design Meaning
1 Anode (A) Input terminal of integrated Schottky diode - connects to input rail in reverse-polarity protection or freewheeling path.
2 Not connected (n.c.) No internal connection - must be left floating or grounded per layout best practice; no electrical function.
3 Drain (D) Main current-carrying terminal of MOSFET - tied to exposed pad for thermal conduction and high-current routing.
4 Source (S) Reference node for MOSFET channel - common connection point for gate drive return and load ground reference.
5 Gate (G) Control input for MOSFET - requires negative VGS relative to source to turn on; compatible with 1.8 V logic thresholds.
6 Cathode (K) Output terminal of integrated Schottky diode - connects to output/load side, enabling unidirectional current flow from A to K.

Key Features

Feature Design Value
Integrated MOSFET + Schottky diode Single-package solution eliminates discrete component matching, reduces board area by >40% vs. separate devices, and ensures consistent thermal tracking.
1.8 V gate drive compatibility −0.6 V VGS(th) typ. enables direct interface with low-voltage microcontrollers and PMICs without level-shifting circuitry.
Ultra-low Schottky VF 440 mV forward voltage at 1 A minimizes conduction loss in high-duty-cycle applications like USB PD charging switches.
Exposed drain pad Thermal resistance Rth(j–sp) = 16–20 K/W enables >6 W power dissipation on standard FR4 with 6 cm² copper, eliminating need for thermal vias in many designs.
Small leadless footprint 2 × 2 mm outline fits into tight spaces near battery connectors or USB ports, supporting ultra-thin portable form factors.

Applications

Charging Switch DC-DC Converter

Use Scenario: Bidirectional USB OTG or battery backup path where main supply and battery must be isolated during charge/discharge cycles.

IC Role / Device Role / Timing Role: PMFPB8040XP acts as high-side P-channel switch controlling battery connection, with integrated Schottky providing reverse-current blocking during adapter removal.

Use Value: Eliminates need for external Schottky diode and reduces BOM count by one component while maintaining <500 mV total forward drop in charging path.

Use Scenario: Synchronous buck converter in portable SSD or tablet power rail, where compact size and efficiency are critical.

IC Role / Device Role / Timing Role: PMFPB8040XP serves as high-side switch; its integrated Schottky replaces external freewheeling diode, enabling faster recovery and lower EMI.

Use Value: Achieves >92% efficiency at 1 A output due to combined 80 mΩ RDS(on) and 440 mV VF, reducing thermal load on 2-layer PCBs.

Portable Power Management Hard Disk Drive Power Control

Use Scenario: Load switching for camera modules or Bluetooth radios in smartphones, requiring low quiescent current and fast enable response.

IC Role / Device Role / Timing Role: PMFPB8040XP functions as controlled power gate; its −100 nA IGSS ensures <1 µA leakage when off, preserving battery life during sleep mode.

Use Value: Enables >1000-hour standby time with sub-µA control path current, meeting stringent mobile device energy budgets.

Use Scenario: Power sequencing and overvoltage protection for 2.5-inch HDDs in ultrabooks, where transient suppression and compact layout are essential.

IC Role / Device Role / Timing Role: PMFPB8040XP implements reverse-polarity protection via Schottky anode/cathode path and MOSFET overvoltage cutoff using gate monitoring.

Use Value: Withstands ±30 V reverse transients and limits fault current to <11 A peak (IDM), protecting drive controller ICs without additional TVS components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET + Schottky diode combination applications.

Alternative Part Technical Difference Application Difference Selection Advice
PMFPB8040DP,115 Same die, different marking and tape/reel packaging - identical electrical specs, thermal performance, and pinout. No functional difference; used interchangeably in production where reel format or traceability requirements differ. Select PMFPB8040DP,115 only when distributor inventory or assembly line feeder compatibility mandates alternate packaging variant.
DMN6040LSD-13 N-channel dual MOSFET (no integrated diode); 60 V rating, 4.2 A, 40 mΩ - requires external Schottky and level-shifter for high-side use. Suitable for low-side switching or half-bridge configurations, not direct replacement for high-side battery switch applications. Choose DMN6040LSD-13 only if design allows N-channel topology with gate driver, accepting added complexity and board area.

Compared with PMFPB8040XP, PMFPB8040DP,115 offers identical performance in alternate packaging, while DMN6040LSD-13 shifts architecture to N-channel with higher voltage rating but requires external components - making PMFPB8040XP the only single-package, high-side-ready solution for space-limited 20 V portable power rails.

Availability

PMFPB8040XP is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter high-side switches, and battery-powered computing power management requiring stable component supply across long production lifecycles.

Supply support for PMFPB8040XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer electronics.

The PMFPB8040XP belongs to NXP's TrenchMOS family of small-signal power FETs, designed specifically for high-efficiency, space-constrained power management in battery-operated portable devices - emphasizing low RDS(on), ultra-thin packaging, and integrated protection functions.

FAQ

What is the maximum continuous drain current rating for PMFPB8040XP?

The PMFPB8040XP supports −3.7 A continuous drain current at VGS = −4.5 V and ambient temperature of 25 °C with a 6 cm² copper mounting pad. At 100 °C ambient, this derates to −1.7 A. The device also supports −11 A peak drain current for single pulses ≤10 µs, enabling robust handling of inrush currents in charging applications.

Does PMFPB8040XP include both MOSFET and Schottky diode functions in one package?

Yes, PMFPB8040XP integrates a P-channel Trench MOSFET and an ultra-low VF MEGA Schottky diode in a single DFN2020-6 package. The MOSFET has pins G, S, and D; the Schottky diode has separate anode (A) and cathode (K) terminals - electrically isolated but thermally coupled, allowing coordinated thermal management without discrete component placement.

What is the typical forward voltage of the integrated Schottky diode in PMFPB8040XP?

The integrated Schottky diode in PMFPB8040XP exhibits a typical forward voltage of 440 mV at IF = 1 A and junction temperature of 25 °C. This value increases to 460 mV at 500 mA and 520 mV max at 1 A, remaining significantly lower than standard silicon diodes - directly improving efficiency in freewheeling and reverse-protection paths.

Can PMFPB8040XP be driven directly from a 1.8 V GPIO?

Yes, PMFPB8040XP is rated for 1.8 V gate drive, with a typical gate threshold voltage (VGS(th)) of −0.6 V and guaranteed turn-on down to −1.0 V. At VGS = −1.8 V, it delivers −1.1 A drain current with RDS(on) ≤156 mΩ - sufficient for low-power load switching and enabling direct interface with modern low-voltage microcontrollers without external level shifters.

What is the thermal resistance from junction to solder point for PMFPB8040XP?

The PMFPB8040XP has a typical thermal resistance Rth(j–sp) of 16 K/W, with a maximum of 20 K/W, measured from junction to solder point on an FR4 PCB with a 6 cm² drain pad. This low value is enabled by the exposed drain pad and supports >6 W power dissipation in compact layouts - critical for sustained operation in portable power switches without forced airflow.

PMFPB8040XP,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
6-UFDFN Exposed Pad
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
102mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.6 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 10 V
FET Feature:
Schottky Diode (Isolated)
Power Dissipation (Max):
485mW (Ta), 6.25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-HUSON (2x2)

PMFPB8040XP,115 FAQ

1.How can I place an order for PMFPB8040XP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMFPB8040XP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMFPB8040XP,115 reliable?

The price and inventory of PMFPB8040XP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMFPB8040XP,115 is usually 5 days.

3.What payment methods are accepted for PMFPB8040XP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMFPB8040XP,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMFPB8040XP,115?

PMFPB8040XP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMFPB8040XP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMFPB8040XP,115?

For technical support, including PMFPB8040XP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMFPB8040XP,115 requirements.

6.How does Aetrix verify that PMFPB8040XP,115 is sourced from the original manufacturer or authorized distributors?

All PMFPB8040XP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMFPB8040XP,115 meets industry standards.

7.What is the process for return or replacement of PMFPB8040XP,115?

All PMFPB8040XP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMFPB8040XP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMFPB8040XP,115 part is unused and in its original packaging.

Return procedure for PMFPB8040XP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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