My Inquiry
My Account
NXP Semiconductors PMG45UN,115
- Part No.:
- PMG45UN,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PMG45UN,115.pdf
- Description:
- MOSFET N-CH 20V 3A 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,318
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMG45UN from Nexperia is a single N-channel Trench MOSFET in SOT363 (TSSOP6) package, rated for 20 V drain-source voltage, 3.3 A continuous drain current at 4.5 V gate drive, and 45 mΩ typical RDS(on) at 3 A/25 °C. It serves as a low-side load switch or high-speed line driver in compact power management circuits.
For engineers reviewing the PMG45UN datasheet, PMG45UN pinout, PMG45UN application, or PMG45UN equivalent, this page delivers verified electrical parameters, thermal behavior under FR4 PCB mounting, junction temperature derating curves, gate charge characteristics, and validated alternative MOSFETs for relay driving and switching circuit design.
Technical Context
This device uses Trench MOSFET technology to achieve low threshold voltage (0.4–1.0 V), fast switching (td(on) = 8 ns, tf = 26 ns), and stable RDS(on) across temperature (1.5× increase from 25 °C to 150 °C). Its 6-pin SOT363 package integrates four drain terminals for enhanced current handling and thermal dissipation.
The PMG45UN operates with gate-source voltage range of ±8 V and supports continuous drain current up to 3 A at 25 °C ambient, derating to 1.9 A at 100 °C ambient. Its safe operating area (SOA) is defined for pulse durations from 100 µs to DC, with peak drain current of 12 A for single pulses ≤10 µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage before breakdown; suitable for 12 V rail switching with margin. |
| RDS(on) | 45 mΩ typ @ VGS = 4.5 V, ID = 3 A, Tj = 25 °C - Enables <140 mW conduction loss at 3 A, critical for thermally constrained layouts. |
| ID (cont) | 3.3 A @ VGS = 4.5 V, Tamb = 25 °C, t ≤ 5 s - Confirmed continuous current rating on standard FR4 PCB with 6 cm² drain pad. |
| QG(tot) | 2.2–3.3 nC - Low total gate charge enables efficient driving from microcontroller GPIO or logic-level buffers without external gate drivers. |
| VGS(th) | 0.4–1.0 V - Ultra-low threshold ensures reliable turn-on with 1.8 V or 2.5 V logic systems. |
| tf | 26 ns @ VDS = 10 V, ID = 3 A, RG(ext) = 6 Ω - Fast fall time supports >10 MHz switching in digital load-switching applications. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mounted package with 6 leads; 4 drain pins (1, 2, 5, 6), 1 gate pin (3), and 1 source pin (4); optimized for thermal performance on FR4 PCB with 6 cm² drain mounting pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain terminals reduce effective lead inductance and improve current sharing; collectively handle full ID and dissipate heat via shared copper pour. |
| 3 | Gate (G) | Control terminal requiring ≤100 nA leakage at ±8 V; driven by low-impedance source to minimize switching losses. |
| 4 | Source (S) | Reference node for gate drive; connected to system ground or low-side return path in load-switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VGS(th) | 0.4–1.0 V enables direct drive from 1.8 V/2.5 V microcontrollers without level-shifting. |
| Trench MOSFET architecture | Delivers 45 mΩ RDS(on) in SOT363 - 30% lower than planar equivalents at same voltage class. |
| Four-drain configuration | Reduces package resistance and thermal impedance (Rth(j-sp) = 25–29 K/W), improving power density in space-constrained designs. |
| Fast dynamic response | 2.2–3.3 nC QG(tot) and 26 ns tf support clean edge transitions in high-frequency PWM and digital switching. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Replacing mechanical relays in industrial I/O modules to eliminate contact wear and bounce. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; turns on/off within 30 ns to synchronize with PLC scan cycles. Use Value: Eliminates relay lifetime limitations while maintaining 20 V coil compatibility and reducing board area by 70% vs. relay + driver IC solution. | Use Scenario: Driving terminated 50 Ω transmission lines in test equipment or FPGA-based communication interfaces. IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain line driver topology; switches at >10 MHz. Use Value: 26 ns fall time and 55 mΩ max RDS(on) ensure minimal signal distortion and <0.5 V undershoot on 3.3 V logic lines. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling power to USB peripherals or sensor subsystems in portable electronics. IC Role / Device Role / Timing Role: Controlled pass element between input rail and load; operated with soft-start via gate resistor. Use Value: 0.4 V VGS(th) guarantees turn-on at battery voltages down to 2.7 V; 45 mΩ RDS(on) limits dropout to <150 mV at 3 A. | Use Scenario: Secondary-side synchronous rectification in isolated DC-DC converters (e.g., flyback, forward) operating up to 500 kHz. IC Role / Device Role / Timing Role: Replacement for Schottky diode in rectifier leg; body diode conducts reverse recovery, then channel conducts forward current. Use Value: VSD = 0.8–1.2 V at 0.8 A reduces conduction loss by 40% vs. 0.4 V Schottky; RDS(on) < 55 mΩ cuts forward loss at high duty cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UVT-7 | 20 V, 4.2 A, 28 mΩ RDS(on) @ 4.5 V in SOT563; higher current rating but smaller package (5-pin). | Higher current density suits tighter layouts but requires revalidation of thermal relief and solder mask openings. | Select when board space is critical and 4.2 A rating is needed; verify layout compatibility with SOT563 footprint. |
| PSMN1R5-20PL | 20 V, 100 A, 1.5 mΩ RDS(on) in LFPAK56; vastly superior power handling but 5× larger footprint and cost. | Designed for high-current motor control or e-fuse applications-not drop-in for SOT363 space-constrained designs. | Choose only if thermal budget exceeds 715 mW and PCB real estate allows LFPAK56; not suitable for direct replacement. |
Compared with DMN2011UVT-7 and PSMN1R5-20PL, the PMG45UN offers optimal balance of low-threshold drive, proven SOT363 thermal performance on FR4, and four-drain current sharing-making it uniquely suited for relay replacement and compact load-switching where gate drive voltage is limited and board area is fixed.
Availability
PMG45UN is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side loadswitches, and switching power supply sync rectifiers requiring stable component supply and long-term industrial availability.
Supply support for PMG45UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.
The PMG45UN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space-constrained, low-voltage switching applications in automotive, industrial, and consumer electronics where low gate threshold and fast switching are essential.
FAQ
What is the maximum continuous drain current for PMG45UN at 100 °C ambient temperature?
The PMG45UN supports 1.9 A continuous drain current at 100 °C ambient temperature when mounted on an FR4 PCB with standard footprint, as specified in Table 5 of the datasheet. This derating reflects thermal limits under realistic board-level conditions and must be applied in thermal design calculations for sustained operation.
Does PMG45UN have a body diode, and what is its forward voltage?
Yes, the PMG45UN includes an intrinsic source-drain body diode. Its forward voltage is 0.8–1.2 V at 0.8 A and 25 °C junction temperature, as documented in Table 7 under "Source-drain diode" parameters. This diode enables freewheeling in inductive loads and synchronous rectification applications.
Can PMG45UN be driven directly from a 1.8 V GPIO output?
Yes, PMG45UN can be driven directly from a 1.8 V GPIO because its gate-source threshold voltage ranges from 0.4 V to 1.0 V at 25 °C. At 1.8 V gate drive, it achieves RDS(on) ≤ 125 mΩ (typical 85 mΩ) at 0.8 A, enabling functional switching-though full 3.3 A capability requires ≥2.5 V drive.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMG45UN?
The thermal resistance from junction to solder point for PMG45UN is 25–29 K/W under conditions of FR4 PCB, single-sided copper, tin-plated, and 6 cm² drain mounting pad with t ≤ 5 s, per Table 6. This value is critical for estimating transient thermal performance during short-duration load pulses.
Is PMG45UN qualified for automotive applications?
No, PMG45UN is not automotive-qualified. The datasheet explicitly states that unless otherwise indicated, NXP/Nexperia products are non-automotive qualified. PMG45UN is intended for industrial, computing, consumer, and wearable applications-not safety-critical or AEC-Q101-compliant automotive systems.
PMG45UN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.3 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 184 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375mW (Ta), 4.35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PMG45UN,115 FAQ
1.How can I place an order for PMG45UN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMG45UN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMG45UN,115 reliable?
The price and inventory of PMG45UN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMG45UN,115 is usually 5 days.
3.What payment methods are accepted for PMG45UN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMG45UN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMG45UN,115?
PMG45UN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMG45UN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMG45UN,115?
For technical support, including PMG45UN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMG45UN,115 requirements.
6.How does Aetrix verify that PMG45UN,115 is sourced from the original manufacturer or authorized distributors?
All PMG45UN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMG45UN,115 meets industry standards.
7.What is the process for return or replacement of PMG45UN,115?
All PMG45UN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMG45UN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMG45UN,115 part is unused and in its original packaging.
Return procedure for PMG45UN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMG45UN,115 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
