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Nexperia USA Inc. PMGD175XNEX
- Part No.:
- PMGD175XNEX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PMGD175XNEX.pdf
- Description:
- MOSFET 2N-CH 30V 0.87A 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,846
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Product details
Overview
PMGD175XNE from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (TSSOP6) package, rated for 30 V drain-source voltage, 0.95 A continuous drain current per transistor at 25 °C, and 211 mΩ typical RDS(on) at VGS = 4.5 V. It serves as a compact low-side load switch or high-speed line driver in space-constrained PCBs.
For engineers reviewing the PMGD175XNE datasheet, PMGD175XNE pinout, PMGD175XNE application, or PMGD175XNE equivalent, key selection criteria include its dual-channel integration in 2.1 mm × 1.25 mm footprint, ESD protection >2 kV HBM, fast switching (tr = 14 ns, tf = 6 ns), and thermal resistance Rth(j-sp) = 120–138 K/W to solder point.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate gate, source, and drain terminals. Its Trench MOSFET architecture enables low threshold voltage (VGS(th) = 0.75–1.25 V) and stable RDS(on) over temperature (344 mΩ max at 150 °C).
It operates under standard logic-level drive (VGS = 2.5–4.5 V), supports peak drain current up to 4 A (10 µs pulse), and features integrated source-drain diodes with VSD = 0.7–1.2 V at IS = 0.3 A, enabling bidirectional current handling in relay and load-switch configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe blocking capability in low-voltage DC switching applications |
| RDS(on) | 211 mΩ typical at VGS = 4.5 V, ID = 0.9 A, Tj = 25 °C - determines conduction loss and thermal rise under load |
| VGS(th) | 0.75–1.25 V - ensures reliable turn-on with 1.8 V or higher logic signals, suitable for battery-powered systems |
| QG(tot) | 1.05–1.65 nC - governs gate drive power and switching speed in high-frequency PWM circuits |
| ID (continuous) | 0.95 A per transistor at Tamb = 25 °C, t ≤ 5 s - sets usable current capacity on standard FR4 PCB with 6 cm² drain pad |
| ESD rating | >2 kV HBM - provides robustness against handling-induced electrostatic discharge without external protection |
| tr/tf | 14 ns / 6 ns - enables operation up to ~20 MHz switching frequency in digital load control |
Pinout & Package
Package: SOT363 (TSSOP6), plastic surface-mounted, 6-lead, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body height. Designed for reflow and wave soldering with defined footprint per Fig. 19–20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source of transistor TR1 - connects to ground or low-side return path for first channel |
| 2 | G1 | Gate of transistor TR1 - accepts logic-level control signal; requires <1.65 nC charge for full turn-on |
| 3 | D2 | Drain of transistor TR2 - carries switched load current for second channel; thermally coupled to PCB pad |
| 4 | S2 | Source of transistor TR2 - independent return node; enables dual isolated low-side switching |
| 5 | G2 | Gate of transistor TR2 - electrically isolated from G1; allows independent control of both channels |
| 6 | D1 | Drain of transistor TR1 - primary high-current output terminal for first channel; shares thermal path with D2 |
Key Features
| Feature | Design Value |
|---|---|
| Low threshold voltage | VGS(th) down to 0.75 V enables direct interface with 1.8 V and 2.5 V microcontrollers without level-shifting |
| Fast switching | 14 ns rise and 6 ns fall times reduce switching losses in PWM-driven loads above 1 MHz |
| Trench MOSFET technology | Delivers 211 mΩ RDS(on) in ultra-small SOT363, improving power density vs planar alternatives |
| ESD protection | >2 kV HBM rating eliminates need for external TVS diodes in board-level ESD zones |
| Thermal performance | Rth(j-sp) = 120–138 K/W enables 390 mW total power dissipation on standard FR4 with minimal copper area |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Replacing mechanical relays in industrial I/O modules requiring silent, wear-free switching at 10–100 Hz. IC Role / Device Role / Timing Role: Dual low-side switch controlling coil current paths for two independent relays with shared ground return. Use Value: Eliminates contact bounce and lifetime limits; 0.95 A per channel supports 24 V/500 mW relay coils with <10 µs response time. |
Use Scenario: Driving terminated 50 Ω transmission lines in test equipment or FPGA-based communication interfaces. IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain line driver configuration with matched edge rates. Use Value: 14 ns rise/6 ns fall times ensure clean 20+ MHz square-wave edges; dual layout minimizes inter-channel skew. |
| Low-Side Load Switch | Switching Circuits |
Use Scenario: Power sequencing and fault-isolated supply enable for sensors, LEDs, or peripheral ICs in portable medical devices. IC Role / Device Role / Timing Role: Independent channel control of two 3.3 V or 5 V loads with current limiting via RDS(on) sensing. Use Value: 211 mΩ RDS(on) yields <50 mV drop at 200 mA, enabling accurate current monitoring without shunt resistors. |
Use Scenario: Compact DC-DC converter synchronous rectification or motor H-bridge half-bridge legs in space-limited consumer electronics. IC Role / Device Role / Timing Role: Complementary low-side switch paired with external high-side FET or controller IC. Use Value: Dual integration reduces board area by 40% vs discrete SO-8 solutions; 30 V rating covers 24 V bus applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | Higher VDS (20 V), lower RDS(on) (145 mΩ typ), same SOT363 package, but only 1.2 A ID rating | Better for 3.3 V logic systems with tighter RDS(on) tolerance; unsuitable for 24 V bus due to lower breakdown | Select when operating below 15 V and prioritizing conduction loss over voltage margin |
| NTJD4152P | 20 V VDS, 280 mΩ RDS(on), higher VGS(th) (1.0–2.0 V), same pinout, but no HBM ESD rating specified | Requires stronger gate drive; lacks documented ESD hardening, increasing risk in uncontrolled assembly environments | Choose only if cost sensitivity outweighs reliability requirements and voltage headroom is sufficient |
Compared with DMN2004LKQ-7 and NTJD4152P, PMGD175XNE uniquely balances 30 V breakdown, 211 mΩ conduction, and >2 kV HBM in SOT363-making it optimal for 24 V industrial interfaces where voltage margin and ESD robustness are non-negotiable.
Availability
PMGD175XNE is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply across production lifecycles.
Supply support for PMGD175XNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The PMGD175XNE belongs to Nexperia's TrenchMOS logic-level dual FET product line, engineered for space-constrained, low-voltage switching applications demanding low RDS(on), fast switching, and robust ESD immunity.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient?
The PMGD175XNE supports 0.5 A continuous drain current per transistor at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints on standard FR4 PCBs with single-sided copper and tin-plated pads; actual current may increase with enhanced thermal design such as internal copper planes or thermal vias.
Can PMGD175XNE be used in a high-side switching configuration?
No-PMGD175XNE is a dual N-channel MOSFET with no integrated charge pump or bootstrap circuitry, making it unsuitable for high-side switching without external gate-driving circuitry. Its pinout and electrical characteristics are optimized for low-side switching, where source terminals connect directly to ground or common return paths.
Is the SOT363 package lead-free and RoHS compliant?
Yes-the PMGD175XNE is manufactured in a lead-free, RoHS-compliant SOT363 package per Nexperia's product compliance documentation. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for standard reflow soldering profiles including IPC/JEDEC J-STD-020.
Does the device include back-to-back body diodes for bidirectional current flow?
No-the PMGD175XNE contains two independent N-channel MOSFETs, each with a single intrinsic source-drain diode oriented anode-to-source, cathode-to-drain. These diodes conduct only from source to drain (forward-biased when VS > VD), enabling freewheeling in low-side inductive loads-but not true bidirectional blocking or conduction without external circuitry.
PMGD175XNEX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 870mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 252mOhm @ 900mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 81pF @ 15V
- Power - Max:
- 260mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PMGD175XNEX FAQ
1.How can I place an order for PMGD175XNEX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMGD175XNEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMGD175XNEX reliable?
The price and inventory of PMGD175XNEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMGD175XNEX is usually 5 days.
3.What payment methods are accepted for PMGD175XNEX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMGD175XNEX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMGD175XNEX?
PMGD175XNEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMGD175XNEX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMGD175XNEX?
For technical support, including PMGD175XNEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMGD175XNEX requirements.
6.How does Aetrix verify that PMGD175XNEX is sourced from the original manufacturer or authorized distributors?
All PMGD175XNEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMGD175XNEX meets industry standards.
7.What is the process for return or replacement of PMGD175XNEX?
All PMGD175XNEX units undergo pre-shipment inspection (PSI). If there is an issue with PMGD175XNEX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMGD175XNEX part is unused and in its original packaging.
Return procedure for PMGD175XNEX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMGD175XNEX Tags
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2N7002DWH6327XTSA1
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2N7002BKS,115
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