Nexperia USA Inc. PMGD290XN,115

Overview

PMGD290XN from Nexperia is a dual N-channel enhancement-mode TrenchMOS™ power transistor in SOT363 (SC-88) package, designed for low-voltage switching in space-constrained portable electronics. It delivers R_DS(on) ≤ 350 mΩ at V_GS = 4.5 V, supports continuous drain current up to 0.86 A per channel at T_sp = 25 °C, and features low threshold voltage (V_GS(th) = 0.5–1.5 V), enabling direct drive from 1.8 V/2.5 V logic.

For engineers reviewing the PMGD290XN datasheet, PMGD290XN pinout, PMGD290XN application, or PMGD290XN equivalent, key selection criteria include dual-channel integration in ultra-small footprint, guaranteed R_DS(on) performance across −55 °C to +150 °C, fast switching (t_r = 11 ns, t_f = 6 ns), and compatibility with 0.41 W total power dissipation in thermally constrained PCB layouts.

Technical Context

This dual MOSFET uses µTrenchMOS™ technology to achieve extremely low on-resistance in a 6-pin SC-88 package - 40% smaller than SOT23 - with independent gate control for each channel. Its V_GS(th) range (0.35–1.8 V) ensures reliable turn-on across temperature extremes, while sub-1 V diode forward voltage (V_SD = 0.8–1.2 V at I_S = 0.3 A) supports efficient reverse-current handling in load-switch and battery-protection topologies.

The device operates within 20 V drain-source rating and ±12 V gate-source limit, with dynamic parameters including C_iss = 34 pF, Q_g(tot) = 0.72 nC, and Miller charge Q_gd = 0.18 nC - optimized for high-efficiency DC-DC converter synchronous rectification and low-power motor driver half-bridge configurations where gate drive loss minimization is critical.

Key Specifications

Pinout & Package

SOT363 (SC-88) surface-mount plastic package: 6-lead, 2.2 mm × 1.8 mm footprint, 0.65 mm pitch, 1.15 mm height - optimized for automated placement and reflow soldering in high-density consumer PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN2041LSD-13 and SI2302DS-T1-GE3, PMGD290XN uniquely balances ultra-compact SC-88 size, dual-channel integration, and 350 mΩ R_DS(on) - making it optimal for space-limited, battery-sensitive applications where gate drive simplicity and thermal coupling between channels improve system-level reliability.

Availability

PMGD290XN is available at Aetrix Electronics and suitable for USB power switching, LED backlight control, wearable sensor load-switching, and Li-ion battery protection requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMGD290XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and headquartered in Nijmegen, Netherlands.

The PMGD290XN belongs to Nexperia's µTrenchMOS™ low-level FET product line, engineered specifically for battery-powered portable electronics demanding minimal board area, low-voltage logic compatibility, and thermally efficient dual-channel switching.

FAQ

What is the maximum continuous drain current per channel at 100 °C solder point temperature?

At T_sp = 100 °C and V_GS = 4.5 V, the PMGD290XN supports 0.54 A continuous drain current per channel, as specified in Table 3 of the datasheet. This derating reflects thermal limitations of the SOT363 package and must be accounted for in ambient temperatures above 60 °C or when adjacent components contribute to localized heating.

Can PMGD290XN be used in a back-to-back configuration for bidirectional blocking?

Yes - its dual N-channel structure allows implementation of a back-to-back switch by connecting D1 to S2 and D2 to S1, with G1 and G2 tied together. This configuration provides bidirectional blocking up to 20 V and is commonly used in single-cell Li-ion protection circuits where reverse-current prevention is required during charge/discharge cycles.

Is the source-drain diode body diode rated for continuous conduction?

The source-drain diode is rated for 0.34 A DC forward current at T_sp = 25 °C (Table 3), with peak capability of 0.69 A in pulsed mode (tp ≤ 10 µs). For sustained conduction - such as synchronous rectification - thermal design must ensure junction temperature remains below 150 °C, as V_SD rises to 1.2 V at 0.3 A and 150 °C.

Does PMGD290XN require external gate resistors for ESD-safe operation?

No external gate resistor is required for basic ESD protection - the device meets HBM 2 kV and CDM 1 kV specifications per JEDEC standards. However, a 10–100 Ω series gate resistor is recommended in high-noise environments (e.g., motor drive proximity) to damp ringing and reduce EMI, especially given its 0.72 nC total gate charge and 11 ns rise time.