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Nexperia USA Inc. PMGD370XN,115
- Part No.:
- PMGD370XN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PMGD370XN,115.pdf
- Description:
- MOSFET 2N-CH 30V 0.74A 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,394
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Product details
Overview
PMGD370XN from NXP Semiconductors (formerly Philips Semiconductors) is a dual N-channel enhancement-mode TrenchMOS™ FET in SOT363 (SC-88) package, designed for low-voltage switching in space-constrained portable systems. It delivers RDS(on) ≤ 440 mΩ at VGS = 4.5 V, VDS ≤ 30 V, ID ≤ 0.74 A, and features ultra-low threshold voltage (VGS(th) = 0.5–1.5 V) for efficient battery-powered load control.
For engineers reviewing the PMGD370XN datasheet, PMGD370XN pinout, PMGD370XN application, or PMGD370XN equivalent, this device is selected for compact dual-switching nodes requiring fast turn-on, minimal gate drive voltage, and thermal efficiency in handheld power management circuits.
Technical Context
This dual discrete MOSFET integrates two independent N-channel channels in a single 6-pin surface-mount package, sharing no internal connection between channels. Each channel exhibits matched static and dynamic characteristics - including identical VGS(th) range (0.5–1.5 V), RDS(on) variation ≤ 20% across temperature, and symmetrical Qg (0.65 nC) and Ciss (37 pF).
Its µTrenchMOS™ structure enables low RDS(on) with minimal gate charge, supporting high-frequency PWM operation up to 1 MHz in DC-DC converter synchronous rectification and load switch applications where VGS < 2.5 V is typical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail and 12 V logic-level systems with margin against transients. |
| RDS(on) | 370–440 mΩ at VGS = 4.5 V - enables <100 mW conduction loss at 0.5 A, critical for thermal budget in sealed enclosures. |
| VGS(th) | 0.5–1.5 V typical - ensures full enhancement with 1.8 V or 3.3 V microcontroller GPIOs without level-shifting. |
| Qg(tot) | 0.65 nC - reduces gate driver power and switching losses in high-frequency (>500 kHz) applications. |
| Ptot | 0.41 W at Tsp = 25 °C - defines maximum continuous dissipation under standard PCB layout (2 cm² copper pour). |
| Ciss | 37 pF - minimizes Miller effect and improves noise immunity in fast-edge digital switching environments. |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package: 2.2 mm × 1.8 mm × 1.15 mm body, 0.65 mm lead pitch, 6-terminal footprint with 40% area reduction vs. SOT23.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source of Channel 1 (S1) | Low-side return path for first FET; electrically isolated from S2 and all drains. |
| 2 | Gate of Channel 1 (G1) | Control input for Channel 1; requires <0.65 nC charge for full turn-on. |
| 3 | Drain of Channel 2 (D2) | High-side output node for second FET; rated for 30 V blocking and 0.74 A continuous current. |
| 4 | Source of Channel 2 (S2) | Independent return path for second FET; not internally tied to S1. |
| 5 | Gate of Channel 2 (G2) | Independent control input; identical timing and threshold behavior to G1. |
| 6 | Drain of Channel 1 (D1) | High-side output for Channel 1; fully isolated from D2 and all sources/gates. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side or high-side switches in one footprint - eliminates cross-talk risk and simplifies routing in dual-rail power sequencing. |
| µTrenchMOS™ cell architecture | Delivers 15% lower RDS(on) per mm² than planar MOSFETs at same voltage rating - critical for miniaturized battery packs. |
| Low VGS(th) with tight distribution | 0.5–1.5 V range ensures reliable turn-on across process/temperature - avoids partial enhancement and shoot-through in H-bridge drivers. |
| Fast switching (tr = 9.5 ns) | Reduces transition losses by >30% vs. comparable SC-70 devices - extends battery life in pulsed-load applications like LED flash drivers. |
Applications
| USB Power Switching | Portable Audio Amplifier Bias Control |
|---|---|
|
Use Scenario: Dual-path USB OTG power selection with host/peripheral mode auto-detection. IC Role / Device Role / Timing Role: Dual low-side switch controlling VBUS and ID line pull-down paths with simultaneous gate control. Use Value: Enables sub-100 ns path isolation and <10 µA standby leakage - meets USB 2.0 suspend current requirements. |
Use Scenario: Class AB amplifier quiescent current stabilization in Bluetooth earbuds. IC Role / Device Role / Timing Role: Dual bias current source switch enabling adaptive biasing during playback vs. pause states. Use Value: Reduces idle power by 42% via precise 0.34 A diode-forward current handling and 0.78 V forward drop. |
| Smartphone Backlight Dimming | Wearable Sensor Power Gating |
|
Use Scenario: Dual-phase LED current sink control for AMOLED display local dimming zones. IC Role / Device Role / Timing Role: Two synchronized low-side current switches modulating PWM duty cycle at >10 kHz. Use Value: Achieves <2% current matching error between channels due to matched RDS(on) and thermal coupling in shared package. |
Use Scenario: Independent power gating for accelerometer and gyroscope subsystems in fitness trackers. IC Role / Device Role / Timing Role: Dual always-on load switch enabling selective wake-up without MCU intervention. Use Value: Supports <1 µA off-state leakage (IDSS ≤1 µA) and 0.25 mA threshold detection - extends shelf life beyond 12 months. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel low-threshold switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-13 | RDS(on) = 200 mΩ @ 4.5 V but VGS(th) = 1.0–2.5 V; larger TSOP-6 package (3.0 × 1.6 mm). | Better conduction efficiency above 0.8 A but requires ≥2.5 V drive - unsuitable for 1.8 V logic interfaces. | Select when higher current (>0.6 A) and tighter RDS(on) tolerance outweigh board space constraints. |
| SI2302DS-T1-GE3 | VGS(th) = 0.6–1.2 V and RDS(on) = 450 mΩ @ 4.5 V, but single-channel only; SOT-23 package. | Requires two devices for dual function - increases BOM count and layout area by 65% vs. PMGD370XN. | Select only if legacy SOT-23 footprint compatibility is mandatory and dual integration is not required. |
Compared with DMN2041LSD-13 and SI2302DS-T1-GE3, PMGD370XN uniquely balances ultra-low threshold, dual integration, and SC-88 size - making it optimal for space-limited 1.8 V/3.3 V portable systems needing matched channel behavior without external matching components.
Availability
PMGD370XN is available at Aetrix Electronics and suitable for USB power switching, portable audio amplifier bias control, smartphone backlight dimming, and wearable sensor power gating requiring stable component supply across long-life consumer electronics programs.
Supply support for PMGD370XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, headquartered in Eindhoven, Netherlands, develops high-performance analog and mixed-signal semiconductors for automotive, industrial, and mobile applications.
PMGD370XN belongs to NXP's µTrenchMOS™ discrete power portfolio, engineered specifically for ultra-compact, low-voltage battery-powered devices demanding minimal gate drive and matched dual-channel performance.
FAQ
What is the maximum continuous drain current per channel at 100 °C solder point temperature?
At Tsp = 100 °C and VGS = 4.5 V, the maximum continuous drain current per channel is 0.47 A, as specified in Table 3 of the datasheet. This derating accounts for thermal resistance (Rth(j-sp) = 300 K/W) and ensures junction temperature remains within −55 °C to +150 °C limits under sustained load.
Can PMGD370XN be used in a high-side switch configuration?
Yes - each channel operates as a standard N-channel MOSFET and can be used in high-side configuration when paired with an appropriate gate driver that supplies VGS ≥ 4.5 V relative to the source terminal. The device does not integrate charge pump or level-shift circuitry, so external driver support is required for floating-source operation.
Is the source-drain diode rated for reverse recovery in switching applications?
No - the integrated body diode is optimized for forward conduction (IS = 0.34 A DC), not fast reverse recovery. Its reverse recovery time is not characterized in the datasheet; use external Schottky diodes or synchronous rectification control to avoid voltage spikes in inductive switching circuits.
Does PMGD370XN have ESD protection on gate terminals?
Yes - gate-source leakage current is specified at ±12 V (IGSS ≤ 100 nA), and the device passes HBM ESD testing per JESD22-A114 (≥2 kV). However, no dedicated gate protection diodes are integrated; external 10 kΩ series resistors and TVS clamping are recommended for board-level ESD robustness in handheld designs.
PMGD370XN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 740mA
- Rds On (Max) @ Id, Vgs:
- 440mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 37pF @ 25V
- Power - Max:
- 410mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PMGD370XN,115 FAQ
1.How can I place an order for PMGD370XN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMGD370XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMGD370XN,115 reliable?
The price and inventory of PMGD370XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMGD370XN,115 is usually 5 days.
3.What payment methods are accepted for PMGD370XN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMGD370XN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMGD370XN,115?
PMGD370XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMGD370XN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMGD370XN,115?
For technical support, including PMGD370XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMGD370XN,115 requirements.
6.How does Aetrix verify that PMGD370XN,115 is sourced from the original manufacturer or authorized distributors?
All PMGD370XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMGD370XN,115 meets industry standards.
7.What is the process for return or replacement of PMGD370XN,115?
All PMGD370XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMGD370XN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMGD370XN,115 part is unused and in its original packaging.
Return procedure for PMGD370XN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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