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Nexperia USA Inc. PMGD780SN,115
- Part No.:
- PMGD780SN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PMGD780SN,115.pdf
- Description:
- MOSFET 2N-CH 60V 0.49A 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:26,055
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Product details
Overview
PMGD780SN,115 from Nexperia is a dual N-channel enhancement-mode TrenchMOS FET in SOT363 (SC-88) package, designed for compact load switching and driver circuits. It features 60 V VDS, 0.49 A continuous drain current per channel at 25 °C, ≤920 mΩ RDS(on) at VGS = 10 V, and standard-level gate threshold (1–2.5 V), enabling direct interfacing with 3.3 V/5 V logic in portable power management.
For engineers reviewing the PMGD780SN,115 datasheet, PMGD780SN,115 pinout, PMGD780SN,115 application, or PMGD780SN,115 equivalent, this device is selected for space-constrained dual-switching nodes requiring low on-resistance, fast switching (tr = 4 ns, tf = 2.2 ns), and thermal robustness up to 150 °C junction temperature in battery-powered systems.
Technical Context
This dual MOSFET integrates two independent N-channel channels sharing no internal connection-each with dedicated source, gate, and drain terminals. Its TrenchMOS architecture delivers low RDS(on) while maintaining tight VGS(th) distribution (1–2.5 V at 25 °C) and stable performance across −55 °C to +150 °C.
It operates as a standard-level gate drive device: fully enhanced at VGS ≥ 4.5 V, with sub-threshold conduction suppressed below 0.6 V (min at 150 °C). Dynamic parameters-including QG(tot) = 1.05 nC, Ciss = 23 pF, and Crss = 3.5 pF-support efficient high-frequency switching in DC-DC converter sync rectification and LED driver control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage per channel; supports 24 V rail switching with 2.5× safety margin. |
| RDS(on) | 780–920 mΩ @ VGS = 10 V, ID = 0.3 A - Low conduction loss enabling <150 mW dissipation per channel at 0.3 A. |
| ID (continuous) | 0.49 A @ Tsp = 25 °C - Sustained current capability per channel under PCB-solder-point-cooled conditions. |
| tr/tf | 4 ns / 2.2 ns - Fast edge rates reduce switching transition losses in PWM-driven loads. |
| QG(tot) | 1.05 nC - Low gate charge enables efficient driving from low-current GPIOs or logic buffers without external buffers. |
| Rth(j-sp) | 300 K/W - Thermal resistance from junction to solder point; defines thermal derating slope for PCB layout planning. |
| VGS(th) | 1–2.5 V @ Tj = 25 °C - Standard-level threshold ensures reliable turn-on with 3.3 V microcontrollers. |
Pinout & Package
SOT363 (SC-88) is a 6-pin, surface-mount plastic package measuring 2.2 mm × 1.8 mm × 1.15 mm, with 0.65 mm lead pitch and footprint 40 % smaller than SOT23. Its compact size supports high-density routing in portable electronics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 (S1) | Return path for Channel 1; electrically isolated from S2-enables independent high-side or low-side configuration per channel. |
| 2 | Gate 1 (G1) | Control terminal for Channel 1; requires no level-shifting when driven by 3.3 V/5 V logic due to standard VGS(th). |
| 3 | Drain 2 (D2) | Output node for Channel 2; shares no internal connection with D1-supports dual independent switching paths. |
| 4 | Source 2 (S2) | Return path for Channel 2; isolated from S1-allows separate ground referencing or floating load configurations. |
| 5 | Gate 2 (G2) | Control terminal for Channel 2; identical electrical behavior to G1-enables synchronized or independent gating. |
| 6 | Drain 1 (D1) | Output node for Channel 1; fully isolated from D2-permits dual-load control without crosstalk. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Two fully isolated FETs in one SC-88 package-reduces board area vs. discrete SOT23 pairs and eliminates inter-device layout mismatch. |
| TrenchMOS technology | Enables 780 mΩ RDS(on) at 10 V drive in ultra-small footprint-improves power efficiency in space-limited battery applications. |
| Standard-level gate threshold | VGS(th) = 1–2.5 V ensures full enhancement with 3.3 V logic-eliminates need for gate drivers in MCU-controlled switches. |
| Fast switching performance | tr = 4 ns, tf = 2.2 ns, QG = 1.05 nC-minimizes transition losses in 1–5 MHz DC-DC sync rectifiers and LED dimming circuits. |
| Thermal robustness | Rth(j-sp) = 300 K/W and Tj(max) = 150 °C-supports sustained operation in thermally constrained handheld enclosures. |
Applications
| Battery-Powered Load Switching | LED Backlight Control |
|---|---|
|
Use Scenario: Dual independent power rails in wearables (e.g., sensor + display subsystems) require sequenced enable/disable with minimal leakage and board area. IC Role / Device Role / Timing Role: Dual N-channel switch controlling VBAT-fed loads; each channel independently gated by MCU GPIOs. Use Value: 0.05 μA max IDSS at 25 °C ensures <1 μW standby loss per channel; 0.49 A rating supports peak sensor burst currents. |
Use Scenario: Sequential dimming of RGB LED strings in portable medical devices where EMI and thermal density are critical. IC Role / Device Role / Timing Role: High-speed PWM switch for cathode-side LED current control; dual channels drive separate color segments. Use Value: 4 ns rise time and 2.2 ns fall time support >2 MHz PWM without duty-cycle distortion; low QG reduces driver loading. |
| USB Peripheral Power Management | Low-Voltage Logic-Level Translation |
|
Use Scenario: Enabling/disabling USB-connected peripherals (e.g., Bluetooth module, flash storage) in portable diagnostic tools with strict inrush control. IC Role / Device Role / Timing Role: Low-side switch isolating VUSB (5 V) supply to downstream ICs; S1/S2 tied to system ground. Use Value: 60 V VDS withstands USB transient spikes; 920 mΩ RDS(on) limits voltage drop to <460 mV at 0.5 A load. |
Use Scenario: Level-shifting between 1.8 V FPGA I/O and 3.3 V sensor interface in compact IoT edge nodes. IC Role / Device Role / Timing Role: Bidirectional logic translator using back-to-back configuration (D1–S2, D2–S1) with pull-up resistors. Use Value: Standard VGS(th) ensures clean 1.8 V → 3.3 V translation; low Ciss (23 pF) preserves signal integrity up to 50 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-13 | Higher RDS(on) (1.2 Ω @ 4.5 V), larger TSOP-6 package (3.05 × 1.6 mm), 20 V VDS | Limited to ≤3.3 V systems; unsuitable for 24 V input or higher-voltage transients | Select only if design uses ≤3.3 V logic and requires lower gate charge (0.6 nC) at cost of voltage headroom. |
| FDMA1023NZ | Lower RDS(on) (450 mΩ @ 4.5 V), same SOT363 footprint, but 20 V VDS and automotive-qualified | Not rated for >20 V operation; overqualified for industrial/portable use where AEC-Q101 adds cost without benefit | Choose only if automotive qualification is mandatory and operating voltage stays ≤16 V. |
Compared with DMN2041LSD-13 and FDMA1023NZ, PMGD780SN,115 uniquely balances 60 V capability, 0.49 A current, and SOT363 size-making it optimal for non-automotive 5–24 V portable systems needing dual switching without voltage compromise or footprint penalty.
Availability
PMGD780SN,115 is available at Aetrix Electronics and suitable for battery-powered load switching, LED backlight control, USB peripheral power management, and low-voltage logic-level translation requiring stable component supply and long-term production continuity.
Supply support for PMGD780SN,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, computing, and consumer markets.
PMGD780SN,115 belongs to Nexperia's μTrenchMOS portfolio-engineered for space-constrained, low-power switching applications where thermal efficiency, small footprint, and logic-level drivability are critical design requirements.
FAQ
What is the maximum continuous drain current per channel at 100 °C solder point temperature?
At Tsp = 100 °C and VGS = 10 V, the continuous drain current per channel is 0.31 A, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the SOT363 package and must be applied in designs without active cooling or large copper pour.
Can PMGD780SN,115 be used in a high-side switch configuration?
No-PMGD780SN,115 contains only N-channel MOSFETs with no integrated charge pump or bootstrap circuitry. High-side switching requires either a P-channel device or an N-channel with gate drive above the source potential, which this part does not support out-of-the-box.
Is the body diode suitable for reverse polarity protection?
Yes-the intrinsic source-drain diode has VSD = 0.83–1.2 V at IS = 0.3 A and is rated for 0.34 A continuous forward current. It can serve as a basic reverse-polarity clamp, though its forward voltage is higher than Schottky alternatives.
Does PMGD780SN,115 have ESD protection on its gate terminals?
Yes-gate leakage current is specified as ≤100 nA at ±20 V (Table 5), and the device meets HBM ESD classification per JEDEC JS-001. However, no specific ESD rating (e.g., 2 kV) is published; external gate protection is recommended in high-noise environments.
PMGD780SN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 490mA
- Rds On (Max) @ Id, Vgs:
- 920mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.05nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 23pF @ 30V
- Power - Max:
- 410mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PMGD780SN,115 FAQ
1.How can I place an order for PMGD780SN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMGD780SN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMGD780SN,115 reliable?
The price and inventory of PMGD780SN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMGD780SN,115 is usually 5 days.
3.What payment methods are accepted for PMGD780SN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMGD780SN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMGD780SN,115?
PMGD780SN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMGD780SN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMGD780SN,115?
For technical support, including PMGD780SN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMGD780SN,115 requirements.
6.How does Aetrix verify that PMGD780SN,115 is sourced from the original manufacturer or authorized distributors?
All PMGD780SN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMGD780SN,115 meets industry standards.
7.What is the process for return or replacement of PMGD780SN,115?
All PMGD780SN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMGD780SN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMGD780SN,115 part is unused and in its original packaging.
Return procedure for PMGD780SN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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