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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMH260UNEH

Name: PMH260UNEH
Brand: Nexperia USA Inc.
SKU: PMH260UNEH
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMH260UNEH

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: PMH260UNEH.pdf

Description:: MOSFET N-CH 20V 1.2A DFN0606-3

Quantity:: RFQ Add To RFQ list

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Inventory:17,737

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Product details

Overview

PMH260UNE from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in a leadless DFN0606-3 (SOT8001) package, optimized for low-threshold switching in space-constrained applications. It delivers R_DS(on) = 260 mΩ at V_GS = 4.5 V and I_D = 0.7 A, supports 1.2 A continuous drain current at 25 °C, and features 1.8 kV HBM ESD protection - deployed as a low-side load switch in portable power management circuits.

For engineers reviewing the PMH260UNE datasheet, PMH260UNE pinout, PMH260UNE application, or PMH260UNE equivalent, key selection criteria include its ultra-small 0.62 × 0.62 × 0.37 mm footprint, fast switching (t_r = 2 ns, t_f = 2 ns), low V_GS(th) (0.45–0.95 V), thermal resistance R_th(j-a) = 287 K/W on FR4, and suitability for high-speed line driving and relay control where board area and gate drive simplicity are critical.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and fast dynamic performance with minimal gate charge (Q_G(tot) = 0.63–0.95 nC). Its sub-threshold conduction is tightly controlled (V_GS(th) = 0.7 V typ at 25 °C), enabling reliable turn-on with low-voltage microcontrollers.

The device operates within ±8 V gate-source voltage limits and sustains 20 V drain-source blocking capability. Its source-drain diode exhibits V_SD = 0.7–1.2 V at I_S = 600 mA, supporting bidirectional current handling in certain switching topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source voltage before breakdown; defines safe operating range in 3.3 V/5 V logic-driven loads.
R_DS(on)	260 mΩ (typ) at V_GS = 4.5 V, I_D = 0.7 A - Determines conduction loss and junction temperature rise under steady-state load.
V_GS(th)	0.45–0.95 V - Enables direct drive from 1.8 V or 2.5 V GPIOs without level-shifting circuitry.
Q_G(tot)	0.63–0.95 nC - Low gate charge reduces driver power demand and enables >10 MHz switching in optimized layouts.
t_r/t_f	2 ns / 2 ns - Fast edge rates minimize switching losses and EMI in high-frequency load switching.
ESD Rating	1.8 kV HBM - Provides robustness against handling and board-level electrostatic events without external protection.
P_tot	0.36 W at T_amb = 25 °C on FR4 - Sets practical power limit for thermally unenhanced PCB layouts.

Pinout & Package

Package: DFN0606-3 (SOT8001), leadless ultra-small plastic SMD package measuring 0.62 × 0.62 × 0.37 mm with exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts low-voltage logic signals; requires <0.95 V to ensure full enhancement.
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side configurations.
3	D (Drain)	Power output terminal; electrically and thermally connected to exposed copper pad on PCB bottom side.

Key Features

Feature	Design Value
Ultra-small footprint	0.62 × 0.62 mm body size - saves >70% board area vs. SOT-23, enabling dense portable PCB layouts.
Low threshold voltage	V_GS(th) down to 0.45 V - ensures reliable turn-on with 1.8 V microcontrollers and battery-powered systems.
Fast switching	t_r = 2 ns, t_f = 2 ns - minimizes transition losses in PWM-driven LED or motor control stages.
Trench MOSFET architecture	Optimized cell density and channel geometry - achieves 260 mΩ R_DS(on) in sub-1 mm² package without sacrificing ruggedness.
ESD-hardened gate	1.8 kV HBM rating - eliminates need for external gate protection in handheld and IoT endpoint designs.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in PLC I/O modules and smart home controllers to reduce size, wear-out, and acoustic noise.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current; driven by 3.3 V MCU GPIO with <1 µs response time.

Use Value: Eliminates mechanical bounce and contact arcing while maintaining 20 V coil compatibility and reducing PCB real estate by >50%.

Use Scenario: Driving terminated transmission lines in USB 2.0 data lines, sensor bus stubs, or industrial fieldbus nodes.

IC Role / Device Role / Timing Role: Active pull-down element in open-drain or push-pull line drivers; switched at >5 MHz.

Use Value: 2 ns fall time ensures signal integrity up to 50 Mbps; low R_DS(on) maintains tight V_OL specs under 50 Ω load.

Low-Side Load Switch

Switching Circuits

Use Scenario: Power gating of sensors, LEDs, or RF modules in battery-powered wearables and medical patches.

IC Role / Device Role / Timing Role: Controlled power path switch; enabled/disabled via 1.8 V logic with <100 ns latency.

Use Value: Sub-1 V V_GS(th) guarantees full turn-on from coin-cell or LDO outputs; 0.36 W P_tot supports 1.2 A peak loads.

Use Scenario: DC-DC converter synchronous rectification, buck converter freewheeling, or PWM dimming in compact LED drivers.

IC Role / Device Role / Timing Role: High-efficiency power switch in hard-switched topologies; operated at 100 kHz–2 MHz.

Use Value: 260 mΩ R_DS(on) and 0.95 nC Q_G jointly reduce conduction + switching losses, improving efficiency by ~3% over comparable SOT-23 devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 175 mΩ @ 4.5 V but larger 1.0 × 1.0 mm DFN package; higher Q_G = 1.2 nC.	Better conduction loss but less suitable for ultra-dense layouts; requires larger thermal pad.	Choose when lower R_DS(on) outweighs size constraints and board area permits 2.5× footprint increase.
AO3400	SO-23 package; R_DS(on) = 28 mΩ @ 10 V but V_GS(th) = 0.8–1.8 V; no HBM rating specified.	Higher drive voltage requirement; lacks ESD hardening; incompatible with 1.8 V logic without gate boosting.	Select only if 10 V gate drive is available and ESD robustness is not required in final environment.

Compared with DMN2016LFG-7 and AO3400, PMH260UNE uniquely balances ultra-miniaturization, 1.8 V logic compatibility, and factory-rated ESD protection - making it optimal for space- and voltage-constrained portable electronics where reliability and layout density are co-prioritized.

Availability

PMH260UNE is available at Aetrix Electronics and suitable for relay driver modules, high-speed line drivers, and low-side load switches requiring stable component supply across consumer, industrial, and IoT production programs.

Supply support for PMH260UNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-grade components.

The PMH260UNE belongs to Nexperia's TrenchMOS portfolio, engineered specifically for ultra-compact, low-voltage switching in battery-powered and space-constrained applications - emphasizing gate-drive simplicity, thermal efficiency, and manufacturability in high-mix SMT lines.

FAQ

What is the maximum continuous drain current for PMH260UNE at 100 °C ambient?

The maximum continuous drain current is 0.73 A at T_amb = 100 °C with device mounted on an FR4 PCB with single-sided copper and tin-plated mounting pad for drain (1 cm²). This derating reflects thermal limitations imposed by R_th(j-a) = 287 K/W and P_tot = 0.36 W at 25 °C ambient.

Does PMH260UNE require external gate resistors for typical 3.3 V MCU drive?

No external gate resistor is required for basic on/off operation with 3.3 V MCUs due to its low input capacitance (C_iss = 41 pF) and gate threshold centered at 0.7 V. However, a 10–47 Ω series resistor is recommended to dampen ringing during high-speed switching (>1 MHz) or in noisy environments.

Can PMH260UNE be used in a high-side configuration?

PMH260UNE is not suitable for high-side switching without a dedicated gate driver because its maximum V_GS rating is ±8 V and it lacks integrated level-shifting. Driving the gate above the source voltage requires a bootstrap or isolated supply - making low-side use the intended and validated configuration per datasheet application guidance.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMH260UNE?

R_th(j-sp) is 47–56 K/W when mounted on an FR4 PCB with single-sided copper, tin-plated, and standard footprint. This value enables accurate thermal modeling of localized heating at the solder joint and informs pad design for improved heat extraction in thermally demanding layouts.

PMH260UNEH Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 310mOhm @ 700mA, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.95 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta), 2.23W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN0606-3

PMH260UNEH FAQ

1.How can I place an order for PMH260UNEH through Aetrix?

Please submit a Request for Quotation (RFQ) for PMH260UNEH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMH260UNEH reliable?

The price and inventory of PMH260UNEH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMH260UNEH is usually 5 days.

3.What payment methods are accepted for PMH260UNEH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMH260UNEH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMH260UNEH?

PMH260UNEH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMH260UNEH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMH260UNEH?

For technical support, including PMH260UNEH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMH260UNEH requirements.

6.How does Aetrix verify that PMH260UNEH is sourced from the original manufacturer or authorized distributors?

All PMH260UNEH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMH260UNEH meets industry standards.

7.What is the process for return or replacement of PMH260UNEH?

All PMH260UNEH units undergo pre-shipment inspection (PSI). If there is an issue with PMH260UNEH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMH260UNEH part is unused and in its original packaging.

Return procedure for PMH260UNEH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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