Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMH550UNEAH

Name: PMH550UNEAH
Brand: Nexperia USA Inc.
SKU: PMH550UNEAH
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PMH550UNEAH

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: PMH550UNEAH.pdf

Description:: PMH550UNEA/SOT8001/DFN0606-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,530

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PMH550UNEAH from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a leadless DFN0606-3 (SOT8001) package, designed for low-side load switching and high-speed line driving. It delivers 770 mA continuous drain current at V_GS = 4.5 V, exhibits R_DS(on) of 550 mΩ (typ) at 25 °C, and features AEC-Q101 qualification for automotive reliability.

For engineers reviewing the PMH550UNEAH datasheet, PMH550UNEAH pinout, PMH550UNEAH application, or PMH550UNEAH equivalent, this device is selected for compact, low-threshold switching in space-constrained automotive and industrial control circuits where fast turn-on/turn-off, ESD robustness (>2 kV HBM), and thermal efficiency on FR4 PCBs are critical.

Technical Context

This N-channel MOSFET uses Trench technology to achieve low gate threshold (0.45–0.95 V) and fast dynamic performance: t_d(on) = 1 ns, t_r = 2 ns, t_d(off) = 4 ns, and t_f = 2 ns under V_DS = 15 V, I_D = 770 mA, and R_G(ext) = 6 Ω conditions. Its gate charge profile shows Q_G(tot) = 0.38 nC (typ) and Q_GD = 0.1 nC (typ), enabling efficient drive with minimal controller loading.

The device integrates an intrinsic source-drain diode with V_SD = 0.9–1.2 V at I_S = 680 mA and T_j = 25 °C, supporting bidirectional current handling in certain switching topologies. Thermal design is supported by R_th(j-sp) = 38 K/W (typ) to solder point and R_th(j-a) = 285 K/W (typ) on standard FR4 - critical for thermal management in ultra-thin applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe blocking voltage in low-voltage automotive and industrial power rails.
R_DS(on)	550 mΩ typical at V_GS = 4.5 V, I_D = 770 mA, T_j = 25 °C - enables <1.3 W conduction loss at full rated current.
I_D (cont)	770 mA at T_amb = 25 °C - supports moderate-power switching in sensor interfaces and LED drivers.
V_GS(th)	0.7 V typical - allows direct drive from 1.8 V or 2.5 V logic without level shifting.
Q_G(tot)	0.38 nC typical - reduces gate driver power demand and switching energy loss.
T_j max	150 °C - ensures operation in under-hood automotive environments and sealed industrial enclosures.
ESD rating	>2000 V HBM - protects against handling damage during SMT assembly and board-level integration.

Pinout & Package

Package: DFN0606-3 (SOT8001), leadless ultra-small plastic SMD package measuring 0.62 × 0.62 × 0.37 mm - optimized for high-density PCB layouts and automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts low-threshold logic-level signals (0.45–0.95 V); requires minimal gate charge (0.38 nC).
2	S (Source)	Reference node for gate drive and current return path; electrically tied to PCB ground plane in low-side configurations.
3	D (Drain)	Power output terminal; thermally connected to large copper pad (1 cm²) for enhanced heat dissipation (R_th(j-sp) = 38 K/W).

Key Features

Feature	Design Value
Low V_GS(th)	0.7 V typical enables direct interface with 1.8 V microcontrollers and low-power logic without external level shifters.
Ultra-fast switching	Combined t_r + t_f = 4 ns minimizes switching losses in PWM-driven loads up to several MHz.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical stress per JESD22 standards.
Leadless DFN0606-3	0.62 mm × 0.62 mm footprint saves >70% board area vs. SOT23 while maintaining thermal performance via exposed drain pad.
ESD protection	>2 kV HBM rating eliminates need for external TVS diodes in most board-level ESD test scenarios (IEC 61000-4-2 Level 2).

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in automotive body control modules (BCM) for window lift, mirror fold, and seat position control.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current; operates in DC or pulsed mode with <1 µs response time.

Use Value: Eliminates relay chatter, contact wear, and acoustic noise while reducing PCB area and BOM count by 3×.

Use Scenario: Driving differential or single-ended communication lines in CAN FD pre-driver stages or sensor bus termination.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain line driver configurations.

Use Value: Achieves <2 ns edge rates compatible with 5 Mbps CAN FD signaling and reduces signal distortion over 1 m traces.

Low-Side Load Switch

Switching Circuit

Use Scenario: Power gating for infotainment USB ports, camera modules, and radar sensors in ADAS ECUs.

IC Role / Device Role / Timing Role: Controlled power path switch with integrated ESD protection and thermal foldback behavior.

Use Value: Provides clean hot-swap capability with <100 ns turn-on delay and no inrush current spikes due to controlled R_DS(on) ramp.

Use Scenario: Synchronous rectification in buck converters for 3.3 V/5 V point-of-load regulation in telematics units.

IC Role / Device Role / Timing Role: Secondary-side switch operating at 500 kHz–2 MHz with low Q_G and minimal C_oss (5.1 pF).

Use Value: Improves converter efficiency by 1.2% at 1 A load versus discrete Schottky solutions, reducing thermal derating needs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H015LPS-13	R_DS(on) = 15 mΩ @ V_GS = 4.5 V; larger TSOP-6 package (2.9 × 1.6 mm); higher I_D = 10 A.	Better suited for higher-current loads (>1 A) but occupies 12× more PCB area and lacks AEC-Q101 certification.	Select when thermal headroom and current capacity outweigh size constraints and automotive qualification requirements.
AO3414	R_DS(on) = 55 mΩ @ V_GS = 4.5 V; SOT-23 package; V_DS = 20 V; not AEC-Q101 qualified.	Lower voltage rating limits use to non-automotive 12 V systems; lacks ESD robustness (no HBM spec stated).	Choose only for cost-sensitive consumer applications where 20 V blocking and non-automotive reliability suffice.

Compared with DMN10H015LPS-13 and AO3414, PMH550UNEAH uniquely balances ultra-compact size, AEC-Q101 compliance, and 30 V capability - making it the sole option among the three for space-limited automotive modules requiring guaranteed reliability and 30 V transient tolerance.

Availability

PMH550UNEAH is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable medical device power management requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PMH550UNEAH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and mobile markets.

PMH550UNEAH belongs to Nexperia's TrenchMOS portfolio - engineered specifically for ultra-compact, high-reliability switching in automotive subsystems and battery-powered equipment where size, speed, and qualification matter.

FAQ

What is the maximum continuous drain current for PMH550UNEAH at 100 °C ambient?

The maximum continuous drain current is 485 mA at T_amb = 100 °C with standard FR4 mounting (single-sided copper, tin-plated). This derating reflects thermal limits imposed by R_th(j-a) = 285 K/W and junction temperature cap of 150 °C. At 25 °C ambient, it supports 770 mA continuously.

Does PMH550UNEAH require a gate resistor for stability?

A gate resistor is recommended - typically 10–47 Ω - to dampen ringing caused by parasitic inductance in high-speed switching. The device's low input capacitance (C_iss = 30.3 pF) and gate resistance (R_G = 19 Ω) make it susceptible to oscillation without external damping, especially in motor or relay drive applications.

Can PMH550UNEAH be used in a high-side configuration?

No - PMH550UNEAH is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side operation would require gate voltage ≥ V_DS + V_GS(th), which exceeds its ±8 V V_GS rating. It is specified and validated exclusively for low-side switching.

Is the DFN0606-3 package compatible with standard reflow profiles?

Yes - the DFN0606-3 (SOT8001) package is qualified for IPC/JEDEC J-STD-020D reflow profiles. Recommended peak temperature is 260 °C for ≤30 seconds; solder land pattern matches Figure 20 in the datasheet (0.21 mm pad width, 0.78 mm length, 0.35 mm pitch).

PMH550UNEAH Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 770mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 670mOhm @ 770mA, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.4 nC @ 4 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 30.3 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 380mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DFN0606-3

PMH550UNEAH FAQ

1.How can I place an order for PMH550UNEAH through Aetrix?

Please submit a Request for Quotation (RFQ) for PMH550UNEAH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMH550UNEAH reliable?

The price and inventory of PMH550UNEAH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMH550UNEAH is usually 5 days.

3.What payment methods are accepted for PMH550UNEAH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMH550UNEAH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMH550UNEAH?

PMH550UNEAH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMH550UNEAH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMH550UNEAH?

For technical support, including PMH550UNEAH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMH550UNEAH requirements.

6.How does Aetrix verify that PMH550UNEAH is sourced from the original manufacturer or authorized distributors?

All PMH550UNEAH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMH550UNEAH meets industry standards.

7.What is the process for return or replacement of PMH550UNEAH?

All PMH550UNEAH units undergo pre-shipment inspection (PSI). If there is an issue with PMH550UNEAH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMH550UNEAH part is unused and in its original packaging.

Return procedure for PMH550UNEAH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…