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Nexperia USA Inc. PMH850UPEH
- Part No.:
- PMH850UPEH
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
PMH850UPEH.pdf
- Description:
- MOSFET P-CH 30V 600MA DFN0606-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,063
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Product details
Overview
PMH850UPEH from Nexperia is a P-channel enhancement-mode Trench MOSFET in a leadless DFN0606-3 (SOT8001) package, rated for −30 V drain-source voltage, 0.85 Ω RDS(on) at VGS = −4.5 V and ID = −0.5 A, with 1.8 kV HBM ESD protection. It serves as a high-side load switch or relay driver in space-constrained portable electronics.
For engineers reviewing the PMH850UPEH datasheet, PMH850UPEH pinout, PMH850UPEH application, or PMH850UPEH equivalent, this device is selected for ultra-small footprint switching where low threshold voltage (−0.7 V typ), fast switching (6 ns td(on), 3 ns tf), and thermal performance on FR4 PCBs are critical design factors.
Technical Context
This MOSFET uses Trench technology to achieve low RDS(on) and fast switching in a 0.62 × 0.62 × 0.37 mm package. Its gate threshold voltage of −0.7 V (typ) enables direct drive from 1.8 V and 2.5 V logic, while its −30 V VDS rating supports industrial and battery-powered 24 V rail applications.
The device features an integrated source-drain diode with VSD = −0.7 to −1.2 V at IS = −0.6 A, and exhibits normalized RDS(on) drift of ~1.4× from 25 °C to 150 °C junction temperature - critical for thermally constrained high-side switch designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - maximum blocking voltage for 24 V system rails with margin |
| RDS(on) | 0.85 Ω (typ) at VGS = −4.5 V, ID = −0.5 A - enables <100 mW conduction loss at 0.5 A |
| VGS(th) | −0.7 V (typ) - ensures turn-on with 1.8 V/2.5 V logic without level shifting |
| QG(tot) | 0.6 nC (typ) - supports >1 MHz switching with low gate drive power |
| tf | 3 ns - minimizes switching transition losses in high-frequency load switching |
| Rth(j-a) | 287 K/W (typ) on FR4 - defines thermal derating above 25 °C ambient |
| ESD HBM | 1.8 kV - provides robustness against handling and board-level ESD events |
Pinout & Package
DFN0606-3 (SOT8001) is a leadless, ultra-thin surface-mount package measuring 0.62 × 0.62 × 0.37 mm, optimized for high-density PCB layouts and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; requires ≤0.6 nC charge for full enhancement; sensitive to ESD |
| 2 | S (Source) | Reference node for gate drive; connected to system ground or positive rail in high-side configuration |
| 3 | D (Drain) | High-current output terminal; thermally coupled to PCB copper pad (1 cm² recommended) |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.62 × 0.62 mm body - saves >70% board area vs. SOT23 in high-density wearables and IoT sensors |
| Low VGS(th) | −0.7 V typ - eliminates need for gate driver IC when interfacing with 1.8 V microcontrollers |
| Fast switching | 6 ns td(on), 3 ns tf - reduces energy loss per cycle in PWM-controlled loads |
| Thermal efficiency | Rth(j-sp) = 47 K/W - enables higher continuous current when soldered to large drain pad |
| ESD robustness | 1.8 kV HBM - meets IEC 61000-4-2 Level 2 for production handling and end-user environments |
Applications
| Smart Wearable Power Switching | USB-C Port Protection |
|---|---|
|
Use Scenario: Enabling/disabling power to OLED display or haptic motor in compact fitness tracker. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail; operates in DC on/off mode with <10 µs response. Use Value: 0.85 Ω RDS(on) limits voltage drop to <425 mV at 0.5 A, preserving battery runtime; 0.62 mm² footprint fits under display bezel. |
Use Scenario: Reverse-current blocking and overcurrent protection in USB-C receptacle circuits. IC Role / Device Role / Timing Role: P-channel back-to-back switch isolating VBUS path; activated only during plug insertion detection. Use Value: −30 V VDS withstands USB PD transient surges; low QG allows fast disable (<100 ns) during fault events. |
| Industrial Sensor Node Power Gating | Automated Test Equipment (ATE) Signal Routing |
|
Use Scenario: Cycling power to MEMS pressure sensor and ADC during low-power sleep/wake cycles. IC Role / Device Role / Timing Role: Low-leakage high-side switch; IDSS <1 µA at −30 V ensures <1 µW standby loss. Use Value: −0.7 V VGS(th) enables direct GPIO control from 3.3 V MCU; 150 °C max Tj supports operation in sealed enclosures. |
Use Scenario: Multiplexing test signals between DUT and measurement instruments in modular ATE racks. IC Role / Device Role / Timing Role: Fast analog switch element in signal path; operated in linear region for low-distortion routing. Use Value: 7.9 pF Coss and 4.8 pF Crss minimize capacitive crosstalk; 3 ns fall time supports >100 MHz signal edge fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFD-7 | RDS(on) = 0.95 Ω (at −4.5 V), larger 1.0 × 1.0 mm UDFN package | Higher thermal resistance (Rth(j-a) = 350 K/W) limits current in confined layouts | Preferred when board space permits and higher surge current (IDM = −3 A) is required |
| AO3415 | VGS(th) = −1.0 to −2.5 V (wider range); no HBM rating specified | Requires ≥3.3 V gate drive; lacks ESD certification for consumer-facing products | Acceptable for cost-sensitive industrial boards where ESD immunity is managed externally |
Compared with DMN2011UFD-7 and AO3415, PMH850UPEH delivers superior combination of ultra-small size, guaranteed low-threshold drive, and certified ESD robustness - making it optimal for miniaturized battery-powered systems requiring reliable single-GPIO control.
Availability
PMH850UPEH is available at Aetrix Electronics and suitable for smart wearable power switching, USB-C port protection, and industrial sensor node power gating requiring stable component supply across high-mix, low-volume production runs.
Supply support for PMH850UPEH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.
PMH850UPEH belongs to Nexperia's TrenchMOS small-signal logic-level MOSFET product line, engineered specifically for space- and power-constrained high-side switching in portable and IoT devices.
FAQ
What is the maximum continuous drain current for PMH850UPEH at 100 °C ambient?
The maximum continuous drain current is −0.4 A at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating accounts for thermal resistance on standard FR4 PCBs and ensures junction temperature remains below 150 °C under steady-state conditions.
Can PMH850UPEH be used with 1.8 V GPIO without a level shifter?
Yes. With a typical gate threshold voltage of −0.7 V and guaranteed −0.45 V minimum, PMH850UPEH fully enhances at 1.8 V logic high (VGS ≈ −1.8 V), delivering RDS(on) <1.7 Ω at −0.3 A - sufficient for most low-current load switching applications.
Is the DFN0606-3 package compatible with standard reflow profiles?
Yes. The DFN0606-3 (SOT8001) package is qualified for JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles up to 260 °C peak. Figure 20 in the datasheet provides exact solder land dimensions and stencil recommendations.
Does PMH850UPEH include intrinsic body diode functionality?
Yes. It integrates a source-drain diode with forward voltage VSD = −0.7 to −1.2 V at −0.6 A and 25 °C. This diode enables freewheeling in inductive load circuits but is not rated for continuous reverse conduction - external flyback protection may be needed in relay drivers.
PMH850UPEH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 62.2 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW (Ta), 2.23W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN0606-3
PMH850UPEH FAQ
1.How can I place an order for PMH850UPEH through Aetrix?
Please submit a Request for Quotation (RFQ) for PMH850UPEH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMH850UPEH reliable?
The price and inventory of PMH850UPEH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMH850UPEH is usually 5 days.
3.What payment methods are accepted for PMH850UPEH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMH850UPEH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMH850UPEH?
PMH850UPEH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMH850UPEH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMH850UPEH?
For technical support, including PMH850UPEH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMH850UPEH requirements.
6.How does Aetrix verify that PMH850UPEH is sourced from the original manufacturer or authorized distributors?
All PMH850UPEH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMH850UPEH meets industry standards.
7.What is the process for return or replacement of PMH850UPEH?
All PMH850UPEH units undergo pre-shipment inspection (PSI). If there is an issue with PMH850UPEH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMH850UPEH part is unused and in its original packaging.
Return procedure for PMH850UPEH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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