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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMK30EP,518

Name: PMK30EP,518
Brand: Nexperia USA Inc.
SKU: PMK30EP,518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMK30EP,518

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PMK30EP,518.pdf

Description:: MOSFET P-CH 30V 14.9A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,368

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Product details

Overview

PMK30EP,518 from Nexperia is a P-channel enhancement-mode TrenchMOS FET in SO8 (SOT96-1) package, designed for low-voltage load switching and battery management. It delivers 16 mΩ R_DS(on) at V_GS = −10 V and I_D = −9.2 A, supports −30 V drain-source voltage, and handles −14.9 A continuous drain current at T_sp = 25 °C - enabling high-efficiency power path control in portable and industrial systems.

For engineers reviewing the PMK30EP,518 datasheet, PMK30EP,518 pinout, PMK30EP,518 application, or PMK30EP,518 equivalent, key selection criteria include verified R_DS(on) at −4.5 V gate drive, thermal resistance to solder point (18 K/W), SO8 footprint compatibility, and confirmed operation in battery protection circuits with reverse polarity and overcurrent blocking.

Technical Context

This device uses TrenchMOS technology to achieve extremely low on-state resistance while maintaining robust gate oxide integrity and stable threshold voltage (−1 V to −3 V at T_j = 25 °C). Its four-drain / three-source pin configuration enables high-current PCB routing and thermal spreading across the SO8 leadframe.

The FET exhibits 7 nC Q_GD and 50 nC Q_G(tot) at V_DS = −15 V, supporting fast switching in synchronous buck high-side or OR-ing applications. The integrated source-drain diode has V_SD = −0.8 to −1.2 V at I_S = −3.45 A, suitable for body-diode conduction during transient load transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - maximum blocking voltage for 24 V rail and battery backup systems
R_DS(on)	16 mΩ (typ) at V_GS = −10 V, I_D = −9.2 A, T_j = 25 °C - enables <150 mW conduction loss at 9 A
I_D	−14.9 A continuous at T_sp = 25 °C - supports high-current load switching without external heatsinking
Q_GD	7 nC - low gate-drain charge minimizes Miller-induced switching delay in high-frequency PWM
R_th(j-sp)	18 K/W - thermal resistance from junction to solder point enables direct PCB copper thermal coupling
V_GS(th)	−1 V to −3 V - ensures reliable turn-on with standard logic-level gate drivers (e.g., −5 V or −4.5 V)
C_iss	2240 pF - input capacitance determines gate drive strength requirement for ≤100 ns switching

Pinout & Package

Package: SO8 (SOT96-1), plastic small outline, 8-lead, 3.9 mm body width, exposed leadframe for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing
4	Gate (G)	Single gate input with −20 V to +20 V absolute rating - compatible with standard level-shifting drivers
5, 6, 7, 8	Drain (D)	Four parallel drain terminals maximize current handling and thermal dissipation into PCB copper

Key Features

Feature	Design Value
Extremely low R_DS(on)	16 mΩ typ at −10 V gate drive - reduces conduction losses by >30% vs. legacy P-FETs in same package
TrenchMOS architecture	Enables stable V_GS(th) across −55 °C to +150 °C - critical for battery systems operating in wide ambient ranges
SO8 thermal design	Exposed drain pads and multi-terminal layout support ≥6.9 W power dissipation at T_sp = 25 °C
Low Q_GD/Q_G(tot) ratio	7/50 nC = 0.14 - improves controllability during hard-switching and reduces risk of shoot-through in half-bridge configurations

Applications

Battery Protection Circuit

USB-C Power Delivery Load Switch

Use Scenario: Reverse-polarity and overcurrent protection in 2-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-FET used as active blocking switch controlled by protection IC.

Use Value: 16 mΩ R_DS(on) limits voltage drop to <150 mV at 9 A, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Hot-swap enable/disable of 20 V USB-C PD power rails in docking stations.

IC Role / Device Role / Timing Role: Load switch isolating downstream peripherals during plug-in/out events.

Use Value: Four parallel drain pins handle peak currents up to −28.8 A (pulsed), preventing latch-up during inrush.

Industrial 24 V DC Power OR-ing

Smart Meter Power Path Management

Use Scenario: Redundant 24 V supply OR-ing in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Back-to-back P-FET pair implementing ideal diode functionality.

Use Value: Low V_GS(th) (−1 V min) ensures turn-on with minimal gate drive overhead, improving system efficiency vs. Schottky solutions.

Use Scenario: Seamless switchover between main AC/DC and backup supercapacitor in utility meters.

IC Role / Device Role / Timing Role: Primary load switch controlling energy flow to real-time clock and memory subsystems.

Use Value: 18 K/W R_th(j-sp) allows direct thermal coupling to meter PCB ground plane, eliminating need for discrete heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R5-30YL	R_DS(on) = 3.5 mΩ (typ) at −10 V, but rated only to −30 V and packaged in LFPAK56 - higher current density but incompatible SO8 footprint	Requires PCB redesign; better suited for space-constrained 12 V systems needing sub-5 mΩ performance	Select when board area is limited and thermal budget allows smaller package; not drop-in for SO8 layouts
IRF7425PBF	R_DS(on) = 28 mΩ (typ) at −10 V, SO8 package, but higher Q_G(tot) (65 nC) and no specified R_th(j-sp)	Higher conduction and switching losses; less predictable thermal behavior in high-reliability metering	Acceptable for cost-sensitive 5–7 A applications where 16 mΩ advantage is non-critical

Compared with PSMN3R5-30YL and IRF7425PBF, PMK30EP,518 uniquely balances SO8 compatibility, 16 mΩ conduction, and documented 18 K/W thermal resistance - making it optimal for industrial designs requiring proven manufacturability and thermal predictability without footprint change.

Availability

PMK30EP,518 is available at Aetrix Electronics and suitable for battery management, USB-C power delivery load switching, and industrial 24 V OR-ing applications requiring stable component supply, long-term lifecycle support, and consistent SO8 sourcing.

Supply support for PMK30EP,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability devices for automotive, industrial, mobile, and computing markets.

The PMK30EP belongs to Nexperia's TrenchMOS logic-level P-channel FET product line, engineered specifically for efficient, thermally robust load switching in space- and power-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C solder point temperature?

The PMK30EP,518 supports −7.5 A continuous drain current at T_sp = 100 °C with V_GS = −10 V, per Figure 1 in the datasheet. This derating reflects thermal limitations of the SO8 package under sustained high-temperature operation, and must be applied when ambient or PCB thermal conditions exceed 70 °C.

Can PMK30EP,518 operate reliably with −4.5 V gate drive?

Yes - at V_GS = −4.5 V and T_j = 25 °C, R_DS(on) is 24–30 mΩ (typ/max), enabling ~220 mW conduction loss at 7.3 A. This makes it suitable for 5 V logic-driven systems, though full −10 V drive is required to achieve the 16 mΩ specification.

Is the source-drain diode rated for continuous conduction?

The source-drain diode is characterized for pulsed operation up to −23 A (I_SM) and continuous −5.8 A (I_S) at T_sp = 25 °C. Its forward voltage is −0.8 to −1.2 V at −3.45 A, but sustained diode conduction requires thermal design validation due to lack of separate diode thermal data.

Does PMK30EP,518 meet RoHS and REACH requirements?

Yes - PMK30EP,518 is manufactured by Nexperia in compliance with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free (Pb-free) finish and halogen-free packaging are confirmed in Nexperia's official compliance documentation dated October 2010 and updated per material declarations.

PMK30EP,518 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 9.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 6.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PMK30EP,518 FAQ

1.How can I place an order for PMK30EP,518 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMK30EP,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMK30EP,518 reliable?

The price and inventory of PMK30EP,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMK30EP,518 is usually 5 days.

3.What payment methods are accepted for PMK30EP,518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMK30EP,518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMK30EP,518?

PMK30EP,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMK30EP,518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMK30EP,518?

For technical support, including PMK30EP,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMK30EP,518 requirements.

6.How does Aetrix verify that PMK30EP,518 is sourced from the original manufacturer or authorized distributors?

All PMK30EP,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMK30EP,518 meets industry standards.

7.What is the process for return or replacement of PMK30EP,518?

All PMK30EP,518 units undergo pre-shipment inspection (PSI). If there is an issue with PMK30EP,518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMK30EP,518 part is unused and in its original packaging.

Return procedure for PMK30EP,518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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