Nexperia USA Inc. PML260SN,118

Overview

PML260SN from Nexperia is an N-channel enhancement-mode TrenchMOS power MOSFET in HVSON8 (SOT873-1) package, designed for primary-side switching in DC-to-DC converters and portable appliances. It features 200 V drain-source breakdown voltage, 8.8 A continuous drain current at 25 °C, 294 mΩ maximum R_DS(on) at V_GS = 10 V and T_j = 25 °C, 4.2 nC gate-drain charge, and thermal resistance of 2.5 K/W from junction to mounting base.

For engineers reviewing the PML260SN datasheet, PML260SN pinout, PML260SN application, or PML260SN equivalent, key selection criteria include its standard-level threshold (2–4 V), low-profile 3.3 × 3.3 × 0.85 mm thermal-enhanced package, avalanche ruggedness (22 mJ), and suitability for high-efficiency, space-constrained power conversion where thermal management and fast switching are critical.

Technical Context

This device operates as a standard-threshold N-channel FET with trench-based silicon architecture optimized for low R_DS(on) and reduced gate charge. Its V_GS(th) range (2–4 V at 25 °C) enables direct drive from 3.3 V or 5 V logic without level shifting, while its 200 V V_DS rating supports operation across wide-input DC-DC topologies including flyback and buck-boost converters.

The HVSON8 package integrates exposed drain pads on terminals 5–8 and source terminals on 1–3, enabling efficient heat transfer to PCB copper. With R_th(j-mb) = 2.5 K/W and Q_GD = 4.2 nC, it balances conduction loss and switching loss for medium-frequency (<500 kHz) power stages in battery-powered systems.

Key Specifications

Pinout & Package

Package: HVSON8 (SOT873-1), plastic thermal-enhanced very thin small outline package, no leads, 8 terminals, body dimensions 3.3 × 3.3 × 0.85 mm, with exposed drain pad for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with PML260SN, PSMN2R0-20PL offers superior conduction efficiency at higher currents but requires updated thermal validation, while PMN26EN eases gate drive design at the expense of higher R_DS(on) and reduced ruggedness-making PML260SN the balanced choice for 10–20 W primary-side switching where threshold compatibility and avalanche safety are prioritized.

Availability

PML260SN is available at Aetrix Electronics and suitable for primary-side switching in flyback converters, DC-DC buck-boost regulators, and portable appliance power management requiring stable component supply and long-term industrial availability.

Supply support for PML260SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, consumer, and wearable markets.

The PML260SN belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered for robust primary-side switching in space-constrained, thermally demanding DC-DC and offline power supplies.

FAQ

What is the maximum safe operating junction temperature for PML260SN?

The absolute maximum junction temperature is +150 °C, and the device is characterized across −55 °C to +150 °C. For reliable long-term operation, keep T_j ≤135 °C under continuous load using derated current curves from Figure 2 and thermal resistance data (R_th(j-mb) = 2.5 K/W). Exceeding 150 °C risks permanent parametric shift or bond-wire failure.

Can PML260SN be driven directly by a 3.3 V microcontroller GPIO?

Yes - its standard-level V_GS(th) (2–4 V) and guaranteed R_DS(on) down to V_GS = 6 V (309 mΩ max) allow functional switching at 3.3 V, though conduction loss increases ~25% versus 10 V drive. For optimal efficiency, use a dedicated gate driver or boost circuit to deliver ≥8 V to the gate.

Does PML260SN include integrated gate protection diodes?

No - the device has no built-in gate protection. External Zener clamping (e.g., 12 V TVS between gate and source) is required to limit V_GS to ±20 V, especially in noisy environments or when driving inductive loads. Gate leakage is specified at 10–100 nA, confirming absence of internal ESD structures beyond basic process-level protection.

How does the HVSON8 package affect PCB layout for thermal performance?

The HVSON8 package relies on copper area under the exposed drain pad (pins 5–8) for heat extraction. Design requires ≥200 mm² of 2-oz copper connected via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch) to inner or backside ground planes. Source pins (1–3) must also connect to large copper pour to minimize source inductance and stabilize gate drive reference.