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Nexperia USA Inc. PMN120ENEX
- Part No.:
- PMN120ENEX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN120ENEX.pdf
- Description:
- MOSFET N-CH 60V 3.1A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,079
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Product details
Overview
PMN120ENEX from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, designed for low-side switching with logic-level gate drive compatibility (VGS(th) = 1.3–2.7 V), RDS(on) = 96 mΩ @ VGS = 10 V / ID = 2.4 A, and ESD protection >2 kV HBM. It serves in high-speed line drivers and relay driver circuits where fast switching (td(on) = 6 ns, tf = 6 ns) and thermal robustness on FR4 PCBs are critical.
For engineers reviewing the PMN120ENEX datasheet, PMN120ENEX pinout, PMN120ENEX application, or PMN120ENEX equivalent, this page delivers verified electrical parameters, validated TSOP6 terminal mapping, real-world loadswitch use cases, and two confirmed alternative MOSFETs with documented RDS(on), gate charge, and thermal resistance differences.
Technical Context
This MOSFET employs Trench technology to achieve low on-resistance and fast switching while maintaining logic-level gate drive compatibility. Its 6-pin TSOP6 package integrates four drain terminals (pins 1, 2, 5, 6), one gate (pin 3), and one source (pin 4), enabling low-inductance layout and enhanced current handling via parallel drain paths.
The device operates within –55 °C to 150 °C junction temperature range, supports peak drain current up to 10 A (10 µs pulse), and exhibits normalized RDS(on) increase of ~2× from 25 °C to 150 °C. Its Ciss = 275 pF and QG(tot) = 5.9–7.4 nC support efficient gate driving in high-frequency switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum continuous drain-source blocking voltage; defines safe operation in 48 V systems and transient-tolerant industrial supplies. |
| RDS(on) | 96 mΩ (typ) @ VGS = 10 V, ID = 2.4 A, Tj = 25 °C - Enables <150 mW conduction loss at 2.4 A, suitable for thermally constrained PCB layouts. |
| VGS(th) | 1.3–2.7 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO without level-shifting circuitry. |
| QG(tot) | 5.9–7.4 nC - Low gate charge allows fast switching with modest gate driver current (e.g., <100 mA peak), reducing switching losses below 1 MHz. |
| tf | 6 ns - Fast fall time minimizes overlap conduction loss in synchronous or PWM-driven low-side configurations. |
| Tj(max) | 150 °C - Specifies maximum junction temperature for continuous operation; derating required above 75 °C ambient per Fig. 1 & 2. |
| Rth(j-a) | 190–220 K/W - Thermal resistance to ambient on standard FR4 PCB; sets practical power dissipation limit to ~570 mW at 25 °C ambient. |
Pinout & Package
TSOP6 (SOT457) plastic surface-mounted package with 6 leads; 3.0 mm × 2.5 mm footprint, 1.3 mm height, and exposed drain pad for thermal conduction. Mounting requires 6 cm² tin-plated copper area on single-sided FR4 PCB for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain terminals reduce package inductance and improve current sharing; connected internally to die drain metallization. |
| 3 | Gate (G) | Control terminal; low input capacitance (Ciss = 275 pF) enables direct MCU drive with minimal RC delay. |
| 4 | Source (S) | Reference node for gate drive and current sensing; tied to PCB ground plane for low-impedance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.7 V ensures full enhancement with 3.3 V or 5 V controllers-eliminates need for external level shifters in embedded control. |
| Low RDS(on) at 4.5 V | 108–146 mΩ @ VGS = 4.5 V / ID = 2.2 A enables efficient operation even with marginally regulated gate supplies. |
| ESD protection | >2 kV HBM rating reduces risk of gate oxide damage during board assembly and handling without additional protection diodes. |
| Fast switching | td(on) = 6 ns, tr = 9 ns, td(off) = 16 ns, tf = 6 ns - Supports PWM frequencies up to 2 MHz with low transition losses. |
| Thermal performance | Rth(j-sp) = 15–20 K/W to solder point enables effective heat transfer to PCB copper when using recommended 6 cm² drain pad. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Driving electromagnetic relays in PLC I/O modules requiring 100 ms switching cycles and surge current tolerance. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles 2.4 A DC hold current and 10 A inrush peaks. Use Value: 96 mΩ RDS(on) limits coil voltage drop to <250 mV at 2.4 A, ensuring reliable relay pull-in; fast turn-off prevents contact arcing. |
Use Scenario: Transmitting TTL/CMOS logic signals across 50 Ω coaxial cables in test equipment backplanes. IC Role / Device Role / Timing Role: Active termination switch enabling bidirectional signal routing with sub-10 ns edge control. Use Value: 6 ns fall time and 275 pF Ciss allow clean 100 Mbps digital waveform transmission without overshoot or ringing. |
| Low-Side Loadswitch | Switching Power Supply Sync Rectifier |
|
Use Scenario: Enabling/disabling 3.3 V or 5 V rails in portable medical sensors with inrush current limiting. IC Role / Device Role / Timing Role: Controlled power path switch with soft-start capability via gate resistor tuning. Use Value: Logic-level threshold allows direct connection to enable pins of microcontrollers; 2.4 A continuous rating supports typical sensor rail loads. |
Use Scenario: Secondary-side synchronous rectification in isolated 12 V output DC-DC converters operating at 500 kHz. IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diode in flyback or forward topology secondary winding. Use Value: 5.9–7.4 nC QG(tot) permits low-loss gate driving at 500 kHz; 60 V VDS withstands reflected voltage spikes in 12 V designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3022LSD-13 | RDS(on) = 22 mΩ @ VGS = 10 V (lower), but VDS = 30 V (reduced voltage margin); QG(tot) = 8.5 nC (higher). | Better for 24 V systems needing ultra-low conduction loss; unsuitable for 48 V bus transients or 60 V-rated designs. | Select when system VDS max ≤ 30 V and RDS(on) reduction outweighs gate drive overhead. |
| PSMN1R5-30YL | RDS(on) = 1.5 mΩ @ VGS = 10 V (much lower), but TO-220FP package (larger, higher thermal resistance); VDS = 30 V. | Requires heatsink for >1 A continuous; incompatible with space-constrained SMT layouts; limited to ≤30 V applications. | Choose only for high-current, low-voltage (<30 V) industrial power stages where PCB area and thermal mass permit through-hole mounting. |
Compared with DMN3022LSD-13 and PSMN1R5-30YL, PMN120ENEX uniquely balances 60 V rating, logic-level drive, SOT457 footprint, and 96 mΩ RDS(on)-making it optimal for compact, medium-voltage embedded switching where voltage margin and board space are both critical.
Availability
PMN120ENEX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching power supply sync rectifiers requiring stable component supply across industrial automation, test instrumentation, and portable electronics programs.
Supply support for PMN120ENEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.
PMN120ENEX belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for space-constrained, thermally sensitive low-side switching applications in consumer, computing, and industrial control systems.
FAQ
What is the maximum continuous drain current for PMN120ENEX at 100 °C ambient?
The maximum continuous drain current is 1.5 A at Tamb = 100 °C, as specified in Table 5 (Limiting values). This reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures on a standard FR4 PCB with 6 cm² drain pad.
Does PMN120ENEX have an integrated body diode, and what is its forward voltage?
Yes, PMN120ENEX includes an inherent source-drain body diode with VSD = 0.8–1.2 V at IS = 1.4 A and Tj = 25 °C (Table 7). This diode conducts during reverse current flow, such as in inductive load freewheeling, but is not optimized for high-efficiency rectification.
Can PMN120ENEX be used with a 3.3 V microcontroller GPIO without a gate driver?
Yes-its VGS(th) range (1.3–2.7 V) and RDS(on) = 108–146 mΩ @ VGS = 4.5 V ensure sufficient enhancement at 3.3 V. However, full 2.4 A current capability requires VGS ≥ 4.5 V; for 3.3 V-only operation, verify actual RDS(on) and power dissipation under load.
What is the recommended PCB layout for optimal thermal performance?
Mount PMN120ENEX on FR4 with single-sided, tin-plated copper; use a 6 cm² drain pad connected to internal/external ground planes via multiple thermal vias. Follow Nexperia's Fig. 19 reflow footprint (3.45 mm × 1.95 mm solder lands) to ensure solder joint integrity and minimize Rth(j-a).
PMN120ENEX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 123mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 275 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PMN120ENEX FAQ
1.How can I place an order for PMN120ENEX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN120ENEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN120ENEX reliable?
The price and inventory of PMN120ENEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN120ENEX is usually 5 days.
3.What payment methods are accepted for PMN120ENEX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN120ENEX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN120ENEX?
PMN120ENEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN120ENEX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN120ENEX?
For technical support, including PMN120ENEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN120ENEX requirements.
6.How does Aetrix verify that PMN120ENEX is sourced from the original manufacturer or authorized distributors?
All PMN120ENEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN120ENEX meets industry standards.
7.What is the process for return or replacement of PMN120ENEX?
All PMN120ENEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN120ENEX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN120ENEX part is unused and in its original packaging.
Return procedure for PMN120ENEX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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