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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN15ENEX

Name: PMN15ENEX
Brand: Nexperia USA Inc.
SKU: PMN15ENEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN15ENEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN15ENEX.pdf

Description:: MOSFET N-CH 30V 6.4A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:2,846

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Product details

Overview

PMN15ENEX from Nexperia is a 30 V, N-channel Trench MOSFET in SOT457 (SC-74/TSOP6) package, designed for low-side switching with logic-level gate drive compatibility, R_DS(on) = 17 mΩ at V_GS = 10 V and T_j = 25 °C, and rated for continuous drain current up to 6.4 A at ambient temperature - used in relay drivers and high-speed line drivers.

For engineers reviewing the PMN15ENEX datasheet, PMN15ENEX pinout, PMN15ENEX application, or PMN15ENEX equivalent, this device supports compact power switching in space-constrained industrial control modules, battery-powered load management circuits, and 3.3 V/5 V microcontroller-driven interface stages where thermal robustness to 175 °C junction temperature is required.

Technical Context

This MOSFET employs Trench technology to achieve low on-resistance and fast switching performance, with gate threshold voltage (V_GS(th)) tightly specified at 1.5 V (typ) and 2.5 V (max), enabling reliable turn-on with standard logic outputs. Its integrated source-drain diode exhibits V_SD = 0.7 V (typ) at I_S = 1.5 A and T_j = 25 °C.

The device features ESD protection >2 kV HBM (Class H2), operates across –55 °C to +175 °C junction temperature range, and delivers normalized R_DS(on) of 1.0 at T_j = 25 °C rising to ~1.4 at T_j = 175 °C - confirming stable conduction under sustained thermal stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage; suitable for 24 V rail switching with margin.
R_DS(on)	17 mΩ (typ) at V_GS = 10 V, I_D = 6.4 A, T_j = 25 °C - enables <100 mW conduction loss at 6 A.
I_D (cont)	6.4 A at T_amb = 25 °C - achievable on FR4 PCB with 6 cm² drain pad; derates to 4.5 A at 100 °C ambient.
Q_G(tot)	9.5 nC (typ) - supports efficient 1–10 MHz switching with moderate gate drive strength (e.g., 10 Ω series resistor).
T_j max	175 °C - allows operation in sealed enclosures or near heat sources without active cooling.
V_GS(th)	1.5 V (typ), 2.5 V (max) - ensures full enhancement with 3.3 V GPIOs and avoids partial turn-on in noisy environments.
C_iss	440 pF - contributes to predictable gate drive timing and low EMI in hard-switched topologies.

Pinout & Package

Package: SOT457 (SC-74 / TSOP6), surface-mount plastic package with 6 leads, 1.7 mm × 3.1 mm footprint, 1.1 mm height, and exposed drain pads on pins 1, 2, 5, and 6 for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 D	Drain	Primary high-current output node; internally connected to pins 2, 5, 6 - requires large copper pour for thermal dissipation.
2 D	Drain	Parallel drain terminal; electrically identical to pin 1 - used for layout symmetry and current sharing.
3 G	Gate	Control input; accepts logic-level voltages; 2 kV HBM ESD-protected; RG ≈ 2 Ω internal gate resistance.
4 S	Source	Reference node for gate drive; connects to system ground or low-side return path; carries full load current.
5 D	Drain	Third parallel drain terminal; enhances thermal spreading and reduces package inductance in high-di/dt applications.
6 D	Drain	Fourth drain terminal; provides redundant connection for solder joint reliability and current distribution.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.5 V ensures full enhancement with 3.3 V or 5 V microcontrollers - eliminates need for level-shifting circuitry.
Extended temperature operation	Junction rating up to 175 °C enables use in automotive under-hood modules, industrial motor drives, and sealed power supplies.
Trench MOSFET architecture	Delivers 17 mΩ R_DS(on) in ultra-small SOT457 - achieves higher current density than planar equivalents in same footprint.
ESD-hardened gate	HBM rating >2 kV (Class H2) reduces risk of field failure during handling or board assembly without additional protection.
Low Q_GD/Q_G ratio	Q_GD = 2.15 nC / Q_G(tot) ≈ 23 % - improves switching efficiency and reduces Miller-induced shoot-through in half-bridge configurations.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in programmable logic controllers (PLCs) with 24 V DC coils requiring 50–200 mA hold current.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current path; turns on/off within <25 ns (tr + tf) to support rapid sequencing.

Use Value: R_DS(on) ≤ 24 mΩ limits I²R loss to <240 mW at 100 mA, eliminating heatsink requirement in dense I/O modules.

Use Scenario: Transmitting TTL/CMOS-compatible digital signals across 50 Ω coaxial cables in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active pull-down stage shaping edge rate and absorbing reflected energy; operates in linear region during transitions.

Use Value: 2.15 nC Q_GD and 18 ns rise time enable clean 10–20 MHz square wave transmission without overshoot or ringing.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 5 V or 12 V peripheral rails in portable medical devices using microcontroller GPIOs.

IC Role / Device Role / Timing Role: Controlled power path switch; withstands inrush currents up to 25 A (peak) during hot-plug events.

Use Value: 6.4 A continuous rating and 175 °C T_j allow safe operation during transient overloads without thermal shutdown.

Use Scenario: Replacing Schottky diodes in secondary-side synchronous rectification of 12 V output buck converters (e.g., telecom PSUs).

IC Role / Device Role / Timing Role: Bidirectional conduction element with body diode forward voltage V_SD = 0.7 V (typ) - minimizes conduction loss vs. 0.45 V Schottky.

Use Value: R_DS(on) = 17 mΩ at 6.4 A yields lower forward drop than typical 40 V Schottky at same current, improving efficiency by ~0.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	R_DS(on) = 20 mΩ (typ) at V_GS = 4.5 V; SO-8 package; higher thermal resistance (R_th(j-a) ≈ 62 K/W).	Requires larger PCB area; less suited for ultra-compact layouts but offers dual-MOSFET integration.	Select when dual-N-channel topology or higher peak current (>30 A) capability is needed; not pin-compatible.
AO3400	R_DS(on) = 28 mΩ (typ) at V_GS = 10 V; SOT23-3 package; no multi-drain terminals; lower ESD rating (1.5 kV HBM).	Limited thermal performance (P_tot = 1.4 W); unsuitable for sustained >3 A loads without heatsinking.	Choose only for cost-sensitive, low-power (<2 A) applications where board space is secondary to BOM cost.

Compared with DMN3020LSD-13 and AO3400, PMN15ENEX delivers superior thermal performance via quad-drain SOT457 packaging, tighter V_GS(th) distribution for consistent logic-level turn-on, and higher ESD immunity - making it optimal for high-reliability, space-constrained industrial switching.

Availability

PMN15ENEX is available at Aetrix Electronics and suitable for relay driver modules, high-speed line driver circuits, and low-side load switch designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for PMN15ENEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for industrial and consumer markets.

PMN15ENEX belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for compact, thermally efficient low-voltage switching in space- and power-constrained applications such as PLC I/O modules and portable instrumentation.

FAQ

What is the maximum continuous drain current for PMN15ENEX at 100 °C ambient temperature?

The maximum continuous drain current is 4.5 A at T_amb = 100 °C, measured on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² mounting pad for the drain. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures, not device degradation.

Can PMN15ENEX be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage is specified at 1.5 V (typ) and 2.5 V (max), ensuring full enhancement at V_GS = 3.3 V. With R_DS(on) = 22 mΩ (typ) at V_GS = 4.5 V and I_D = 5.5 A, conduction losses remain low even at 3.3 V drive, though R_DS(on) increases slightly versus 10 V drive.

Does PMN15ENEX include an integrated body diode, and what is its forward voltage?

Yes - it features an inherent source-drain body diode with V_SD = 0.7 V (typ) at I_S = 1.5 A and T_j = 25 °C. This diode supports freewheeling in inductive loads and synchronous rectification, with forward voltage increasing to ~1.2 V at 175 °C junction temperature.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMN15ENEX?

R_th(j-sp) is 15 K/W (typ), measured with the device mounted on an FR4 PCB having single-sided copper, tin-plated, and a 6 cm² drain pad. This value enables accurate thermal modeling of solder-joint temperature rise and supports design of reliable thermal interfaces in high-power-density layouts.

PMN15ENEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 667mW (Ta), 7.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN15ENEX FAQ

1.How can I place an order for PMN15ENEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN15ENEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN15ENEX reliable?

The price and inventory of PMN15ENEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN15ENEX is usually 5 days.

3.What payment methods are accepted for PMN15ENEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN15ENEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN15ENEX?

PMN15ENEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN15ENEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN15ENEX?

For technical support, including PMN15ENEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN15ENEX requirements.

6.How does Aetrix verify that PMN15ENEX is sourced from the original manufacturer or authorized distributors?

All PMN15ENEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN15ENEX meets industry standards.

7.What is the process for return or replacement of PMN15ENEX?

All PMN15ENEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN15ENEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN15ENEX part is unused and in its original packaging.

Return procedure for PMN15ENEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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