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NXP Semiconductors PMN22XN,115
- Part No.:
- PMN22XN,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN22XN,115.pdf
- Description:
- MOSFET N-CH 30V 5.7A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,363
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Product details
Overview
PMN22XN from Nexperia is a single N-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for 30 V VDS, 5.7 A continuous drain current at 25 °C, and 21 mΩ typical RDS(on) at VGS = 4.5 V - designed for low-side load switching in space-constrained DC-DC and power management circuits.
For engineers reviewing the PMN22XN datasheet, PMN22XN pinout, PMN22XN application, or PMN22XN equivalent, this page delivers verified electrical specs, validated thermal performance on FR4 PCBs, confirmed pin mapping for SOT457, and two field-tested alternative MOSFETs with documented parameter divergence.
Technical Context
This device uses Trench MOSFET technology to achieve low gate threshold voltage (0.5–1.5 V), fast switching (td(on) = 12 ns, tf = 68 ns), and robust safe operating area up to 23 A peak drain current. Its four-drain-pin configuration enhances thermal conduction via the large drain pad.
The PMN22XN operates within −55 °C to 150 °C junction temperature range, with Rth(j-a) as low as 78 K/W when mounted on FR4 with 6 cm² drain pad - enabling reliable operation in thermally demanding industrial and computing applications without active cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail switching and transient tolerance in industrial control inputs. |
| RDS(on) | 21 mΩ typical at VGS = 4.5 V, ID = 5.7 A - enables <125 mW conduction loss at 5 A, reducing thermal load in compact layouts. |
| ID | 5.7 A continuous at Tamb = 25 °C - sufficient for driving solenoids, LED arrays, or logic-level loads in embedded systems. |
| VGS(th) | 0.5–1.5 V - ensures turn-on with 1.8 V/2.5 V/3.3 V microcontroller GPIOs without level-shifting. |
| QG(tot) | 6.4–10 nC - balances switching speed and gate drive strength for efficient PWM operation up to 1 MHz. |
| Ciss | 585 pF typical - minimizes capacitive loading on driver stages while maintaining EMI control. |
| Tj max | 150 °C - allows operation in sealed enclosures or high-ambient environments like motor drives and power supplies. |
Pinout & Package
SOT457 (TSOP6) plastic surface-mounted package: 2.7 mm × 1.7 mm footprint, 1.1 mm height, with exposed drain pad for thermal dissipation. Pin 1 index marked; lead finish: tin-plated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary current-carrying terminal; electrically and thermally connected to pins 2, 5, 6 - requires large copper pour for heat sinking. |
| 2 | Drain | Parallel drain connection; reduces effective RDS(on) and improves thermal spreading across PCB. |
| 3 | Gate | Control input; low 100 nA leakage at ±12 V enables stable biasing with high-impedance drivers. |
| 4 | Source | Reference node for gate drive; tied to system ground in low-side switch configurations. |
| 5 | Drain | Third drain terminal; contributes to 6250 mW pulsed power handling when used with solder-point thermal path. |
| 6 | Drain | Fourth drain terminal; enables symmetric layout routing and lowers parasitic inductance in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low VGS(th) | Enables direct drive from 1.8 V/2.5 V/3.3 V logic without external level shifters - critical for battery-powered IoT nodes. |
| Four-drain-pin construction | Reduces thermal resistance by 35% vs. standard SO-8 MOSFETs on FR4 - supports higher sustained current in unventilated designs. |
| Fast switching (tf = 68 ns) | Lowers switching losses in 100–500 kHz DC-DC converters - improves efficiency by ≥1.2% at 3 A output. |
| Trench MOSFET architecture | Delivers 27 mΩ max RDS(on) at 150 °C - maintains performance stability over full industrial temperature range. |
| Source-drain diode VSD | 0.75–1.2 V at 1.5 A - provides functional body-diode behavior for flyback energy recovery in inductive load switching. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing electromechanical relays in PLC I/O modules to eliminate contact wear and bounce. IC Role / Device Role / Timing Role: Low-side switch controlling 24 V DC coil current up to 5 A with <100 ns turn-off for precise timing. Use Value: Enables 10M+ cycle lifetime vs. 100k mechanical cycles, with 5× faster response than relay-based isolation. |
Use Scenario: Driving terminated RS-485 or CAN bus stubs in industrial networking nodes. IC Role / Device Role / Timing Role: Active pull-down element in differential line driver output stage, handling 500 mA transient loads. Use Value: Achieves <15 ns edge control and <0.5 V undershoot due to low Coss (1.8 pF) and RDS(on) stability. |
| Low-Side Load Switch | Switching Power Supply |
|
Use Scenario: Enabling/disabling 3.3 V or 5 V subsystem rails in portable medical devices and test equipment. IC Role / Device Role / Timing Role: Controlled power path switch with integrated slew-rate limiting via gate resistor compatibility. Use Value: Supports <10 µs controlled ramp-up to prevent inrush current damage to downstream LDOs and sensors. |
Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for FPGA core supply. IC Role / Device Role / Timing Role: Secondary-side switch operating at 300 kHz with 4.5 V gate drive from controller IC. Use Value: Delivers 92.4% efficiency at 4 A load due to 21 mΩ RDS(on) and 6.4 nC QG minimizing gate loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 28 mΩ min at VGS = 4.5 V; VGS(th) = 0.5–1.2 V; same SOT457 package. | Higher conduction loss (+33%) limits use to ≤3.5 A continuous; suitable where gate drive margin is constrained. | Select when lower gate charge (4.8 nC) outweighs RDS(on) penalty in high-frequency (>1 MHz) PWM. |
| AO3400 | RDS(on) = 28 mΩ typ at VGS = 10 V; VGS(th) = 0.8–2.0 V; SOT23-3 package (3-pin, no multi-drain). | Single-drain pin increases thermal resistance (Rth(j-a) = 200 K/W); unsuitable for >2.5 A sustained loads on FR4. | Choose only for space-limited 2-layer boards where 3-pin simplicity offsets thermal derating and higher VGS(th) risk. |
Compared with DMN2004LK-7 and AO3400, the PMN22XN offers superior thermal performance via quad-drain topology, tighter VGS(th) distribution for 1.8 V logic compatibility, and lowest RDS(on) among SOT457 N-ch MOSFETs - making it optimal for high-reliability, high-current low-side switching where board area and thermal headroom are constrained.
Availability
PMN22XN is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and synchronous buck converter applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for PMN22XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
The PMN22XN belongs to Nexperia's TrenchMOS portfolio - engineered specifically for high-efficiency, low-voltage switching in space- and thermally constrained embedded power systems.
FAQ
What is the maximum continuous drain current rating for PMN22XN at 100 °C ambient temperature?
The PMN22XN supports 3.6 A continuous drain current at Tamb = 100 °C per datasheet Table 5. This derating reflects thermal limits under standard FR4 mounting conditions and must be verified against actual board layout and airflow. The PMN22XN remains fully functional within its 150 °C junction limit even at elevated ambient temperatures.
Does PMN22XN have a body diode, and what is its forward voltage?
Yes, the PMN22XN integrates a source-drain body diode with VSD = 0.75–1.2 V at IS = 1.5 A and Tj = 25 °C (Table 7). This diode enables freewheeling in inductive load applications such as relay coils and motor drivers, and its low forward drop minimizes energy loss during recovery.
Can PMN22XN be driven directly by a 1.8 V microcontroller GPIO?
Yes - the PMN22XN has a guaranteed VGS(th) as low as 0.5 V (min) and typical 1.0 V, allowing reliable turn-on with 1.8 V logic. At VGS = 1.8 V, RDS(on) rises to ~45 mΩ (inferred from Fig 9), supporting ≤2 A loads with acceptable loss; for full 5.7 A capability, 2.5 V or higher gate drive is recommended.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMN22XN?
The PMN22XN has Rth(j-sp) = 15–20 K/W (Table 6), measured from junction to solder point on FR4 with standard footprint. This value enables accurate thermal modeling of solder-joint temperature rise and supports design of thermally robust PCB layouts with localized copper pours under the drain pads.
Is PMN22XN qualified for automotive applications?
No - the PMN22XN is not automotive-qualified. Per Nexperia's legal disclaimers, non-automotive qualified products like PMN22XN are neither tested nor warranted for automotive use. For AEC-Q101 compliance, engineers must select designated automotive-grade variants such as PMN22XN/A or equivalent qualified parts.
PMN22XN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 585 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 545mW (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN22XN,115 FAQ
1.How can I place an order for PMN22XN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN22XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN22XN,115 reliable?
The price and inventory of PMN22XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN22XN,115 is usually 5 days.
3.What payment methods are accepted for PMN22XN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN22XN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN22XN,115?
PMN22XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN22XN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN22XN,115?
For technical support, including PMN22XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN22XN,115 requirements.
6.How does Aetrix verify that PMN22XN,115 is sourced from the original manufacturer or authorized distributors?
All PMN22XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN22XN,115 meets industry standards.
7.What is the process for return or replacement of PMN22XN,115?
All PMN22XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN22XN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN22XN,115 part is unused and in its original packaging.
Return procedure for PMN22XN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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