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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN230ENEAX

Name: PMN230ENEAX
Brand: Nexperia USA Inc.
SKU: PMN230ENEAX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN230ENEAX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN230ENEAX.pdf

Description:: MOSFET N-CH 60V 1.8A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:7,478

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Product details

Overview

PMN230ENEAX from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, designed for low-side switching with logic-level gate drive compatibility, R_DS(on) = 176 mΩ @ V_GS = 10 V and T_j = 25 °C, AEC-Q101 qualified, and rated for continuous operation up to T_j = 175 °C - used in automotive relay drivers and high-speed line switching.

For engineers reviewing the PMN230ENEAX datasheet, PMN230ENEAX pinout, PMN230ENEAX application, or PMN230ENEAX equivalent, this device supports compact, thermally constrained PCB layouts requiring robust ESD protection (>2 kV HBM), stable on-resistance over temperature, and fast switching (t_r = 5 ns, t_f = 3 ns) in 12 V/24 V automotive subsystems.

Technical Context

This MOSFET employs Trench MOSFET technology to achieve low R_DS(on) and high transconductance (g_fs = 4 S), enabling efficient low-voltage switching with minimal gate charge (Q_G(tot) = 2.5–3.8 nC). Its logic-level threshold (V_GS(th) = 1.3–2.3 V) ensures direct compatibility with 3.3 V and 5 V microcontroller outputs without level-shifting.

The device integrates an intrinsic body diode with V_SD = 0.8–1.2 V at I_S = 1.5 A and t_rr = 10 ns, supporting moderate-frequency freewheeling in inductive loads. Thermal design is enabled by validated R_th(j-sp) = 22–28 K/W and R_th(j-a) = 210–240 K/W on FR4 with 6 cm² drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for 24 V automotive systems with 2× safety margin against load-dump transients.
R_DS(on)	176 mΩ @ V_GS = 10 V, I_D = 1.8 A, T_j = 25 °C - enables <1.8 W conduction loss at full rated current.
I_D (cont)	1.8 A @ T_amb = 25 °C - supports sustained load switching in space-constrained modules like door control ECUs.
Q_G(tot)	2.5–3.8 nC - low gate charge reduces driver power demand and allows fast turn-on/off with small gate resistors.
T_j max	175 °C - extended junction temperature rating supports under-hood applications without derating at ambient ≤125 °C.
ESD HBM	>2 kV - meets Class H2 per JESD22-A114, eliminating need for external ESD protection in most board-level designs.
AEC-Q101	Qualified - certified for automotive use per stress test standard, including HTGB, HTRB, and temperature cycling.

Pinout & Package

Package: SOT457 (TSOP6), surface-mounted plastic package with 6 leads, 3.1 mm × 1.7 mm footprint, 1.1 mm height, and exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary high-current path; electrically and thermally connected to large copper drain pad on PCB.
2	Drain	Second drain terminal - paralleled internally with Pin 1 to reduce resistance and improve thermal spreading.
3	Gate	Control input; requires <2.3 V threshold to initiate conduction; sensitive to ESD but protected to >2 kV HBM.
4	Source	Reference node for gate drive and current return; tied to ground plane in low-side switch configuration.
5	Drain	Third drain terminal - enhances current handling and thermal dissipation via multi-terminal layout.
6	Drain	Fourth drain terminal - completes quad-drain structure optimized for low-inductance, high-current routing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced from 3.3 V MCU GPIOs without external level shifters or gate drivers.
Quad-drain TSOP6 layout	Four drain pins reduce package resistance and thermal impedance, improving power density vs. standard SO-8 or SOT-23.
Integrated body diode	Fast recovery (t_rr = 10 ns) and low forward drop (V_SD = 0.8–1.2 V) support inductive load commutation.
AEC-Q101 qualification	Validated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock.
Thermal performance	R_th(j-sp) = 22–28 K/W enables >1.5 W continuous dissipation on standard FR4 with 6 cm² drain pad.

Applications

Automotive Relay Driver

High-Speed Line Driver

Use Scenario: Driving 12 V automotive relays (e.g., HVAC blower, headlight, wiper) from MCU GPIOs in body control modules.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current (typically 50–200 mA), with fast turn-off to suppress back-EMF spikes.

Use Value: Logic-level compatibility eliminates discrete level-shifter components; AEC-Q101 qualification ensures reliability across -40 °C to +125 °C ambient.

Use Scenario: Transmitting digital control signals across noisy chassis-ground-referenced wiring harnesses in ADAS sensor interfaces.

IC Role / Device Role / Timing Role: Active pull-down element in open-drain bus drivers, providing clean signal termination and fast edge rates.

Use Value: Low R_DS(on) (176 mΩ) and fast switching (t_f = 3 ns) maintain signal integrity up to 10 MHz without overshoot or ringing.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 12 V auxiliary loads (e.g., USB chargers, infotainment peripherals) with inrush current limiting.

IC Role / Device Role / Timing Role: Controlled series switch between battery rail and load, with gate driven by dedicated load-switch controller or MCU PWM.

Use Value: Quad-drain construction lowers effective on-resistance and thermal rise, allowing 1.8 A continuous current in 3.1 mm × 1.7 mm footprint.

Use Scenario: Replacing Schottky diodes in 12 V output stage of buck converters for automotive DC-DC modules (e.g., infotainment power rails).

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by gate driver IC, conducting during low-side phase with body diode freewheeling.

Use Value: Low Q_GD (0.7 nC) and Cr_ss (11 pF) minimize switching losses and enable stable operation at 500 kHz–1 MHz frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 190 mΩ @ 4.5 V; smaller SOT-23 package; lower I_D (1.4 A); no AEC-Q101 certification.	Not suitable for automotive under-hood use; limited thermal headroom in high-ambient environments.	Select only for cost-sensitive non-automotive consumer applications where space is critical and qualification is not required.
PSMN1R0-30YL	R_DS(on) = 1.0 mΩ @ 10 V; TO-220 package; 30 V rating; higher gate charge (Q_G = 35 nC); not logic-level.	Requires gate driver; unsuitable for direct MCU drive; physically larger and incompatible with SMT-only assembly.	Choose only when ultra-low on-resistance is mandatory and board space/thermal mass permits TO-220 mounting.

Compared with DMN2004LKQ-7 and PSMN1R0-30YL, PMN230ENEAX uniquely balances AEC-Q101 compliance, logic-level drive, quad-drain thermal efficiency, and SOT457 miniaturization - making it optimal for space- and reliability-constrained automotive low-side switches.

Availability

PMN230ENEAX is available at Aetrix Electronics and suitable for automotive relay drivers, high-speed line drivers, low-side load switches, and synchronous rectifier circuits requiring stable component supply across production lifecycles.

Supply support for PMN230ENEAX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The PMN230ENEAX belongs to Nexperia's Automotive TrenchMOS portfolio, engineered specifically for robust, space-efficient low-side switching in 12 V/24 V vehicle subsystems - emphasizing AEC-Q101 compliance, thermal resilience, and logic-level usability.

FAQ

What is the maximum continuous drain current for PMN230ENEAX at 100 °C ambient?

At T_amb = 100 °C, the maximum continuous drain current is 1.1 A, as specified in Table 5 (Limiting values) of the datasheet. This derating accounts for thermal resistance to ambient (R_th(j-a) ≈ 225 K/W) and maximum junction temperature (175 °C), ensuring safe operation without forced cooling.

Does PMN230ENEAX require a gate resistor for MCU-driven switching?

A gate resistor is recommended - typically 10–47 Ω - to dampen ringing caused by gate-drain capacitance (Cr_ss = 11 pF) and PCB trace inductance. While not strictly required for logic-level compatibility, it improves EMI performance and prevents shoot-through in half-bridge configurations.

Can PMN230ENEAX be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables stable current sharing. However, matched layout (symmetrical trace lengths, shared thermal pad) and individual gate resistors are required to ensure balanced dynamic turn-on and prevent oscillation.

Is the body diode suitable for reverse recovery in flyback topologies?

The integrated body diode has t_rr = 10 ns and Q_r = 3 nC, making it suitable for low-to-moderate frequency (<500 kHz) flyback snubbing and freewheeling, but not for high-frequency ZVS or resonant topologies where ultra-fast recovery diodes are preferred.

PMN230ENEAX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 222mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 110 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 625mW (Ta), 5.4W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN230ENEAX FAQ

1.How can I place an order for PMN230ENEAX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN230ENEAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN230ENEAX reliable?

The price and inventory of PMN230ENEAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN230ENEAX is usually 5 days.

3.What payment methods are accepted for PMN230ENEAX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN230ENEAX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN230ENEAX?

PMN230ENEAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN230ENEAX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN230ENEAX?

For technical support, including PMN230ENEAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN230ENEAX requirements.

6.How does Aetrix verify that PMN230ENEAX is sourced from the original manufacturer or authorized distributors?

All PMN230ENEAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN230ENEAX meets industry standards.

7.What is the process for return or replacement of PMN230ENEAX?

All PMN230ENEAX units undergo pre-shipment inspection (PSI). If there is an issue with PMN230ENEAX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN230ENEAX part is unused and in its original packaging.

Return procedure for PMN230ENEAX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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