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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN230ENEX

Name: PMN230ENEX
Brand: Nexperia USA Inc.
SKU: PMN230ENEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN230ENEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN230ENEX.pdf

Description:: MOSFET N-CH 60V 1.6A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:5,078

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Product details

Overview

PMN230ENEX from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, designed for low-side switching with R_DS(on) = 176 mΩ @ V_GS = 10 V, I_D = 1.6 A, and logic-level gate drive compatibility (V_GS(th) = 1.7 V typ). It delivers fast switching (t_r = 8 ns, t_f = 5 ns), ESD protection >2 kV HBM, and operates up to 150 °C junction temperature - used in relay drivers and high-speed line drivers.

For engineers reviewing the PMN230ENEX datasheet, PMN230ENEX pinout, PMN230ENEX application, or PMN230ENEX equivalent, this device is evaluated for low-voltage logic-driven load switching where thermal resistance (R_th(j-sp) = 28–32 K/W), SOA robustness at 60 V, and compact SMT footprint are critical selection criteria.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate charge (Q_G(tot) = 3.9–5 nC). Its gate threshold voltage (1.3–2.7 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs, while the integrated source-drain diode (V_SD = 0.85–1.2 V @ I_S = 1.1 A) supports bidirectional current handling in flyback or clamping configurations.

The device features six-terminal TSOP6 packaging with four drain-connected pins (pins 1, 2, 5, 6), one gate (pin 3), and one source (pin 4), enabling low-inductance, high-current drain routing and optimized thermal conduction via the large drain pad. Its SOA is characterized up to 100 ms pulses and validated under FR4 PCB mounting conditions (6 cm² drain pad).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24 V industrial bus and 48 V telecom applications.
R_DS(on)	176 mΩ @ V_GS = 10 V, I_D = 1.6 A, T_j = 25 °C - Enables <1.3 W conduction loss at 1.6 A DC load current.
V_GS(th)	1.7 V typ - Ensures full enhancement with standard 3.3 V GPIO without level-shifting.
Q_G(tot)	3.9–5 nC - Supports >1 MHz PWM switching with low gate-drive power requirement.
t_r/t_f	8 ns / 5 ns - Minimizes switching transition losses in high-frequency DC-DC and motor control.
I_D (continuous)	1.6 A @ T_amb = 25 °C - Rated for sustained operation on standard FR4 PCB with 6 cm² copper drain pad.
R_th(j-sp)	28–32 K/W - Enables direct thermal coupling to PCB copper, critical for compact power stages.

Pinout & Package

Package: TSOP6 (SOT457), surface-mounted plastic package with exposed drain pad; dimensions 3.1 × 2.5 × 1.1 mm; 6-lead configuration optimized for thermal and electrical performance in space-constrained designs.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals reduce package inductance and improve current sharing; connected internally to large copper pad for thermal dissipation.
3	Gate (G)	High-impedance control input; requires <5 nC total charge for full enhancement; compatible with 3.3 V/5 V logic.
4	Source (S)	Reference node for gate drive; tied to ground or low-side return path; enables simple low-side switch topology.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.3–2.7 V enables direct interface with 3.3 V MCUs without external level shifters.
Low R_DS(on) at 4.5 V	196–262 mΩ @ V_GS = 4.5 V, I_D = 1.5 A - maintains efficiency in battery-powered systems with reduced gate voltage headroom.
ESD protection	>2 kV HBM - eliminates need for external ESD protection in board-level handling and assembly.
Fast switching	t_d(on) = 6 ns, t_d(off) = 13 ns - reduces dead-time requirements and improves system efficiency in synchronous rectification.
Thermal performance	R_th(j-sp) = 28–32 K/W - allows >1.1 W continuous power dissipation on standard FR4 with minimal heatsinking.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in PLC I/O modules requiring fast coil energization/de-energization cycles.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current (typically 20–100 mA) with precise timing and minimal voltage drop.

Use Value: 176 mΩ R_DS(on) limits coil voltage drop to <17 mV at 100 mA, ensuring reliable relay pull-in even at low supply voltages.

Use Scenario: Transmitting TTL/CMOS signals across long PCB traces or cables in industrial communication interfaces.

IC Role / Device Role / Timing Role: Active pull-down element in open-drain bus drivers (e.g., RS-485 fail-safe biasing or I²C termination).

Use Value: 8 ns rise time and 5 ns fall time enable clean signal edges up to 50 Mbps, reducing jitter and reflection-induced errors.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling power to peripheral circuits (e.g., sensors, displays) in portable medical devices.

IC Role / Device Role / Timing Role: Controlled power path switch with fast turn-off to prevent backfeed and support hot-swap sequencing.

Use Value: Logic-level compatibility allows direct MCU GPIO control; 2 kV HBM ESD rating protects against user-handling discharge events.

Use Scenario: Secondary-side synchronous rectification in isolated DC-DC converters (e.g., 12 V → 3.3 V, 500 kHz).

IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diode in flyback or forward converter output stage.

Use Value: Q_G(tot) = 3.9–5 nC and R_DS(on) = 176 mΩ reduce conduction + switching losses by >40% vs. 40 V Schottky at 1.5 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 28 mΩ @ V_GS = 10 V, but rated only for 30 V V_DS; larger SO-8 package.	Better efficiency below 24 V, but unsuitable for 48 V bus or transient overvoltage conditions.	Select when operating strictly ≤24 V and higher current (>3 A) is required; avoid for 60 V-rated systems.
PSMN1R0-30YL	R_DS(on) = 1.0 mΩ @ V_GS = 10 V, 30 V rating, LFPAK56 package; 10× lower R_DS(on) but 3× cost and larger footprint.	Targeted at high-current server VRMs; over-engineered for 1–2 A relay/load switching.	Choose only if thermal budget is extremely tight and volume justifies premium cost; not cost-effective for this use case.

Compared with DMN3026LSD-13 and PSMN1R0-30YL, PMN230ENEX uniquely balances 60 V rating, logic-level drive, SOT457 compactness, and sub-200 mΩ on-resistance - making it optimal for space-constrained, mid-voltage industrial switching where cost, size, and 3.3 V compatibility are jointly critical.

Availability

PMN230ENEX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching power supply sync rectifiers requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PMN230ENEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with leadership in efficiency, miniaturization, and automotive-grade reliability.

PMN230ENEX belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for space-efficient, low-voltage-controlled power switching in industrial automation, consumer power supplies, and IoT edge nodes.

FAQ

What is the maximum continuous drain current for PMN230ENEX at 100 °C ambient temperature?

The maximum continuous drain current is 1 A at T_amb = 100 °C, as specified in Table 5 (Limiting values) of the datasheet. This derating accounts for thermal resistance and safe junction temperature (T_j ≤ 150 °C) on a standard FR4 PCB with single-sided copper and 6 cm² drain pad.

Does PMN230ENEX have an integrated body diode, and what is its forward voltage?

Yes, PMN230ENEX includes an inherent source-drain body diode with V_SD = 0.85–1.2 V at I_S = 1.1 A and T_j = 25 °C, per Table 7 (Characteristics). This diode supports freewheeling current in inductive loads and enables basic synchronous rectification without external components.

Can PMN230ENEX be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes - its typical gate threshold voltage is 1.7 V (min 1.3 V, max 2.7 V), and R_DS(on) remains low (196–262 mΩ) at V_GS = 4.5 V. At 3.3 V, it achieves partial enhancement sufficient for many low-duty-cycle or low-current applications, though full 10 V drive yields optimal R_DS(on).

What is the thermal resistance from junction to solder point (R_th(j-sp)) and why does it matter?

R_th(j-sp) is 28–32 K/W, measured from die junction to the solder joint on the PCB drain pad. This parameter directly determines how much power can be dissipated before exceeding T_j(max) = 150 °C - enabling accurate thermal design without heatsinks when using proper copper area and reflow profiles.

PMN230ENEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 222mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 177 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 475mW (Ta), 3.9W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN230ENEX FAQ

1.How can I place an order for PMN230ENEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN230ENEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN230ENEX reliable?

The price and inventory of PMN230ENEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN230ENEX is usually 5 days.

3.What payment methods are accepted for PMN230ENEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN230ENEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN230ENEX?

PMN230ENEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN230ENEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN230ENEX?

For technical support, including PMN230ENEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN230ENEX requirements.

6.How does Aetrix verify that PMN230ENEX is sourced from the original manufacturer or authorized distributors?

All PMN230ENEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN230ENEX meets industry standards.

7.What is the process for return or replacement of PMN230ENEX?

All PMN230ENEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN230ENEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN230ENEX part is unused and in its original packaging.

Return procedure for PMN230ENEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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