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NXP Semiconductors PMN23UN,135
- Part No.:
- PMN23UN,135
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN23UN,135.pdf
- Description:
- MOSFET N-CH 20V 6.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,843
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Product details
Overview
PMN23UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT457 (TSOP6) package, designed for low-voltage switching applications. It delivers RDS(on) ≤28 mΩ at VGS = 4.5 V, supports continuous drain current up to 6.3 A at Tsp = 25 °C, and features ultra-low threshold voltage (VGS(th) typ. 0.7 V), enabling efficient operation in battery-powered load switch circuits.
For engineers reviewing the PMN23UN datasheet, PMN23UN pinout, PMN23UN application, or PMN23UN equivalent, this page provides verified technical context, validated pin functions, real-world use cases in notebook DC-DC stages and motor control, and confirmed alternative parts with documented parameter differences.
Technical Context
The PMN23UN employs µTrenchMOS™ technology to achieve low on-resistance and fast switching with minimal gate charge (Qg(tot) typ. 10.6 nC). Its VGS(th) range of 0.4–0.7 V ensures reliable turn-on from 1.8 V logic, while RDS(on) remains stable across junction temperatures up to 150 °C.
Designed for surface-mount operation in space-constrained systems, it integrates a source-drain diode with VSD ≤1.2 V at IS = 1.7 A and exhibits low output capacitance (Coss typ. 185 pF), supporting high-frequency PWM control in DC-DC converters and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - supports 12 V and 15 V rail switching without derating. |
| RDS(on) | 23–28 mΩ at VGS = 4.5 V - enables <150 mW conduction loss at 6 A. |
| ID | 6.3 A continuous at Tsp = 25 °C - suitable for notebook CPU core power delivery. |
| VGS(th) | 0.4–0.7 V - guarantees turn-on with 1.8 V GPIO or low-voltage microcontroller outputs. |
| Qg(tot) | 10.6 nC typical - reduces gate drive power and enables >1 MHz switching in buck converters. |
| Ciss | 740 pF typical - balances EMI control and switching speed in compact layouts. |
| Tj max | +150 °C - allows operation in thermally dense notebook chassis or industrial enclosures. |
Pinout & Package
SOT457 (TSOP6) plastic surface-mounted package with 6 leads; compact 3.1 × 2.7 mm footprint and 0.95 mm pitch; optimized for automated assembly and thermal performance via solder-point conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (d) | Parallel-connected drain terminals - provide low-inductance, high-current path to PCB ground plane or power plane. |
| 3 | Gate (g) | Control input - requires <10.6 nC charge for full enhancement; sensitive to ESD (±8 V absolute max). |
| 4 | Source (s) | Reference node for gate drive and load return - ties directly to system ground or low-side sense point. |
Key Features
| Feature | Design Value |
|---|---|
| µTrenchMOS™ technology | Enables 23 mΩ RDS(on) in TSOP6 - achieves higher current density than planar MOSFETs of same size. |
| Low VGS(th) | Turns on fully at 1.8 V - eliminates need for level shifters when driven by modern low-voltage MCUs. |
| Fast switching | td(on)/tr/td(off)/tf = 8.5/14.5/55/16 ns - supports >500 kHz PWM in synchronous buck regulators. |
| Source-drain diode | VSD ≤1.2 V at 1.7 A - provides body-diode functionality for freewheeling in half-bridge configurations. |
| Thermal resistance | Rth(j-sp) = 70 K/W - enables 1.75 W dissipation with modest PCB copper area (≥1 cm² 2-oz copper). |
Applications
| Battery-Powered Load Switch | Notebook CPU Core Power |
|---|---|
Use Scenario: Selective power gating of USB peripherals or display backlight in portable devices. IC Role / Device Role / Timing Role: Low-side load switch controlled by 1.8 V GPIO signal. Use Value: Ultra-low VGS(th) ensures full enhancement and <150 mW loss at 6 A, extending battery runtime. |
Use Scenario: High-efficiency synchronous rectification in notebook CPU VRM buck converter. IC Role / Device Role / Timing Role: Low-side FET in 500 kHz–1 MHz buck stage. Use Value: 10.6 nC Qg(tot) and 740 pF Ciss minimize switching losses and gate drive burden. |
| Set-Top Box Power Supply | DC Motor Control |
Use Scenario: Secondary-side synchronous rectifier in 12 V auxiliary rail of STB SMPS. IC Role / Device Role / Timing Role: High-speed switch replacing Schottky diode in LLC resonant converter. Use Value: 28 mΩ RDS(on) cuts conduction loss by >60% vs. 40 V Schottky, improving 12 V rail efficiency. |
Use Scenario: H-bridge low-side driver for 5–12 V brushed DC motors in portable medical devices. IC Role / Device Role / Timing Role: Logic-level-controlled power switch with integrated body diode. Use Value: 25.2 A peak drain current (IDM) handles motor stall currents without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 22 mΩ @ VGS = 4.5 V; VGS(th) = 0.5–1.1 V; SOT-23-3 package (3-pin, no drain paralleling) | Limited to ≤3.5 A continuous due to smaller package; lacks multi-drain thermal path. | Select when board space is critical and current demand ≤3.5 A; verify gate drive compatibility with wider VGS(th) range. |
| SI2302DS-T1-BE3 | RDS(on) = 35 mΩ @ VGS = 4.5 V; VGS(th) = 0.4–1.0 V; same SOT-23-3 footprint | Higher conduction loss increases thermal stress above 2 A; lower peak current rating (IDM = 12 A). | Use only in cost-sensitive, low-power (<2 A) load switches where 35 mΩ loss is acceptable. |
Compared with DMN2004LK-7 and SI2302DS-T1-BE3, the PMN23UN delivers superior thermal performance via its 4-drain SOT457 layout, higher current capability (6.3 A vs. ≤3.5 A), and tighter VGS(th) distribution - making it preferred for sustained high-current, low-voltage switching where PCB thermal relief is constrained.
Availability
PMN23UN is available at Aetrix Electronics and suitable for notebook power management, battery-powered motor control, and set-top box DC-DC conversion requiring stable component supply and long-term lifecycle support.
Supply support for PMN23UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PMN23UN belongs to Nexperia's µTrenchMOS™ logic-level MOSFET family, engineered specifically for high-efficiency, low-voltage switching in space- and power-constrained portable electronics.
FAQ
What is the maximum continuous drain current for PMN23UN at 70 °C solder point temperature?
The PMN23UN supports 5 A continuous drain current at Tsp = 70 °C with VGS = 4.5 V, per its limiting values table. This derating reflects thermal constraints of the SOT457 package and must be applied in designs where ambient or PCB thermal resistance limits junction temperature rise. The PMN23UN maintains safe operation up to +150 °C junction temperature.
Does PMN23UN have a built-in body diode, and what is its forward voltage?
Yes, the PMN23UN includes an integrated source-drain body diode with VSD ≤1.2 V at IS = 1.7 A and Tj = 25 °C. This diode enables freewheeling current paths in inductive loads such as DC motors or buck converter inductors. The PMN23UN's diode is rated for continuous forward current up to 1.45 A and peak current up to 25.2 A.
Can PMN23UN be driven directly by a 1.8 V microcontroller GPIO?
Yes - the PMN23UN has a guaranteed VGS(th) as low as 0.4 V and typical value of 0.7 V, ensuring full enhancement at 1.8 V gate drive. Its RDS(on) remains ≤34.4 mΩ even at VGS = 2.5 V, making it compatible with 1.8 V and 2.5 V logic families without external level shifting. The PMN23UN thus simplifies interface design in modern low-voltage embedded systems.
What is the thermal resistance from junction to solder point for PMN23UN?
The PMN23UN has a maximum Rth(j-sp) of 70 K/W, measured from junction to solder point under transient conditions. This value enables calculation of junction temperature rise based on actual PCB copper area and layout. For example, with 1.75 W dissipation and 70 K/W, ΔTj-sp = 122.5 K - requiring careful thermal design to keep Tj ≤150 °C. The PMN23UN's multi-drain structure enhances heat spreading versus standard SOT-23 devices.
Is PMN23UN RoHS compliant and halogen-free?
Yes - the PMN23UN meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's product compliance documentation. Its SOT457 package uses lead-free matte tin plating and green molding compound. The device carries Nexperia's standard environmental certifications, including REACH SVHC declaration and conflict minerals reporting. The PMN23UN is qualified for industrial temperature range (−55 °C to +150 °C) and supports lead-free reflow profiles.
PMN23UN,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.75W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN23UN,135 FAQ
1.How can I place an order for PMN23UN,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN23UN,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN23UN,135 reliable?
The price and inventory of PMN23UN,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN23UN,135 is usually 5 days.
3.What payment methods are accepted for PMN23UN,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN23UN,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN23UN,135?
PMN23UN,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN23UN,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN23UN,135?
For technical support, including PMN23UN,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN23UN,135 requirements.
6.How does Aetrix verify that PMN23UN,135 is sourced from the original manufacturer or authorized distributors?
All PMN23UN,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN23UN,135 meets industry standards.
7.What is the process for return or replacement of PMN23UN,135?
All PMN23UN,135 units undergo pre-shipment inspection (PSI). If there is an issue with PMN23UN,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN23UN,135 part is unused and in its original packaging.
Return procedure for PMN23UN,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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