NXP Semiconductors PMN23UN,165

Overview

PMN23UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT457 (TSOP6) package, designed for ultra-low-level switching with 23 mΩ R_DS(on) at V_GS = 4.5 V, 2 A; 20 V V_DS rating; and 6.3 A continuous drain current at T_sp = 25 °C. It serves as a high-speed load switch in battery-powered notebook computers and DC-DC converter driver stages.

For engineers reviewing the PMN23UN datasheet, PMN23UN pinout, PMN23UN application, or PMN23UN equivalent, this page delivers verified electrical parameters, thermal behavior, gate charge characteristics, real-world use cases, and validated alternative parts - all aligned to the original Philips/Nexperia product data Rev. 01 (16 June 2004).

Technical Context

The PMN23UN employs µTrenchMOS™ technology to achieve low threshold voltage (0.4–0.7 V), fast switching (t_d(on) = 8.5 ns, t_f = 16 ns), and low on-resistance across low gate drive voltages (1.8 V to 4.5 V). Its design targets logic-level compatibility with 1.8 V/2.5 V/3.3 V microcontrollers and ASICs.

It integrates a source-drain diode with V_SD = 0.8–1.2 V at I_S = 1.7 A and supports pulsed peak drain current up to 25.2 A (t_p ≤ 10 µs). Thermal resistance from junction to solder point is 70 K/W, enabling compact PCB layout in thermally constrained spaces.

Key Specifications

Pinout & Package

SOT457 (TSOP6) surface-mount plastic package: 1.3 mm × 3.0 mm footprint, 0.95 mm pitch, 1.1 mm height; optimized for automated assembly and thermal transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with PMN23UN, DMN2004LK-7 offers comparable voltage rating but reduced current handling and thermal robustness, while SI2302DS-T1-GE3 trades package simplicity for significantly lower power dissipation capability - making PMN23UN the optimal choice for 5–6 A, thermally constrained, logic-level switching applications.

Availability

PMN23UN is available at Aetrix Electronics and suitable for battery-powered motor control, notebook computer load switching, and DC-to-DC converter driver applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PMN23UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with deep expertise in automotive, industrial, computing, and consumer power management solutions.

The PMN23UN belongs to Nexperia's µTrenchMOS™ logic-level MOSFET family, engineered specifically for high-efficiency, low-voltage switching in space-constrained portable and embedded systems where gate drive voltage is limited to 1.8–4.5 V.

FAQ

What is the maximum continuous drain current for PMN23UN at 70 °C solder point temperature?

The PMN23UN supports 5 A continuous drain current at T_sp = 70 °C with V_GS = 4.5 V, per its limiting values table. This reflects thermal derating from the 6.3 A rating at 25 °C and must be applied when ambient conditions or PCB copper area limit heat dissipation. Designers should verify junction temperature using R_th(j-sp) = 70 K/W and actual power dissipation in the PMN23UN.

Does PMN23UN have a built-in body diode, and what is its forward voltage?

Yes, the PMN23UN includes an integrated source-drain body diode with V_SD = 0.8–1.2 V at I_S = 1.7 A and V_GS = 0 V, as specified in the Characteristics table. This diode enables freewheeling in buck and flyback topologies and supports reverse-polarity protection circuits without adding external components - a key advantage in compact PMIC designs.

Can PMN23UN be driven directly by a 1.8 V microcontroller GPIO?

Yes, the PMN23UN has a guaranteed V_GS(th) as low as 0.4 V and delivers R_DS(on) = 37–52 mΩ at V_GS = 1.8 V and I_D = 1.5 A, enabling direct drive from 1.8 V logic without level shifting. However, designers should confirm gate charge requirements (Q_g(tot) = 10.6 nC) and ensure the MCU GPIO can source/sink sufficient peak current for acceptable switching speed.

What is the safe operating area (SOA) limitation for PMN23UN at DC operation?

At DC operation, the PMN23UN's safe operating area is bounded by its 6.3 A continuous drain current limit at T_sp = 25 °C and 1.75 W total power dissipation. The SOA curve (Figure 3) shows that at V_DS = 10 V, DC current must remain below ~1.75 A to stay within P_tot, and at V_DS = 1 V, it supports up to ~6 A - confirming its suitability for low-V_DS switching applications like load switching and OR-ing.

Is PMN23UN RoHS compliant and halogen-free?

Yes, the PMN23UN meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's material declarations. As a legacy part originally released under Philips Semiconductors (2004), it was requalified and certified under Nexperia's modern compliance program, with full substance disclosure available in the official Nexperia product change notification (PCN) database and material declaration sheets.