NXP Semiconductors PMN25EN,115

Overview

PMN25EN from Nexperia is a 30 V, 6.2 A N-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, optimized for low-side switching with logic-level gate drive compatibility, 20 mΩ R_DS(on) at V_GS = 10 V, and fast 5 ns turn-on delay-used in relay drivers and high-speed line drivers.

For engineers reviewing the PMN25EN datasheet, PMN25EN pinout, PMN25EN application, or PMN25EN equivalent, key selection criteria include its 30 V V_DS, 6.2 A continuous drain current at 25 °C, 20–23 mΩ on-resistance, logic-level gate threshold (1.5 V typ), and SOT457 thermal performance with R_th(j-a) as low as 78 K/W on 6 cm² drain pad.

Technical Context

This N-channel MOSFET employs Trench MOSFET technology to achieve low R_DS(on) and fast switching, with V_GS(th) of 1.5 V (typ) enabling direct interface with 3.3 V and 5 V logic controllers. Its gate charge profile includes 9.6 nC total Q_G and 1.5 nC Q_GD, supporting efficient PWM operation up to several MHz.

The device features integrated source-drain diode with 1.4 A forward current capability and 0.78 V typical V_SD, and operates across –55 °C to 150 °C junction temperature range. Thermal resistance from junction to solder point is 15–20 K/W, facilitating compact PCB layout with minimal heatsinking.

Key Specifications

Pinout & Package

SOT457 (TSOP6) plastic surface-mounted package: 2.7 mm × 3.1 mm footprint, 0.95 mm height, 6-lead single-row configuration with exposed drain pads on pins 1, 2, 5, and 6 for thermal and current handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Compared with DMN2004LK-7, PMN25EN delivers 50% higher current and 33% lower R_DS(on) in identical SOT457 packaging; versus PSMN022-30PL, it trades 35% lower R_DS(on) and 70% higher current for smaller footprint and easier layout integration.

Availability

PMN25EN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits requiring stable component supply across industrial automation, test instrumentation, and embedded power management.

Supply support for PMN25EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The PMN25EN belongs to Nexperia's TrenchMOS low-voltage logic-level MOSFET product line, engineered for high-efficiency, space-constrained low-side switching in battery-powered and thermally limited applications.

FAQ

What is the maximum continuous drain current for PMN25EN at 100 °C ambient temperature?

The PMN25EN supports 3.9 A continuous drain current at T_amb = 100 °C with V_GS = 10 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT457 package on standard FR4 PCB; using a 6 cm² drain pad improves heat dissipation and sustains higher current in real-world layouts. Always verify junction temperature with actual board layout and airflow conditions before final design sign-off for PMN25EN.

Is PMN25EN suitable for driving inductive loads like relays or solenoids?

Yes, PMN25EN is explicitly qualified for relay driver applications per its Product Profile. Its integrated source-drain diode (1.4 A, 0.78 V V_SD) provides freewheeling path for coil energy, and its 25 A peak drain current rating handles relay inrush transients. For robust operation, add a 10–100 nF RC snubber across the coil and ensure gate drive includes a 10–47 Ω series resistor to damp ringing. The PMN25EN datasheet confirms this use case in Section 1.3 Applications.

Does PMN25EN require a gate driver IC when used with a 3.3 V microcontroller?

No, PMN25EN does not require an external gate driver IC with 3.3 V microcontrollers. Its 1.5 V typical gate threshold voltage and logic-level compatibility allow full enhancement at V_GS = 3.3 V, delivering near-minimum R_DS(on) (24–31 mΩ at 5.4 A). However, for high-frequency PWM (>500 kHz) or high-current switching (>4 A), a small gate resistor (10–22 Ω) is recommended to control dv/dt and prevent oscillation-verified in PMN25EN's dynamic characteristics testing.

What is the thermal resistance from junction to ambient for PMN25EN on a standard PCB?

On a standard FR4 PCB with single-sided copper and tin-plated finish (no extended drain pad), PMN25EN has R_th(j-a) = 200–230 K/W. With a 6 cm² copper mounting pad for the drain terminals, this improves to 78–90 K/W-enabling 1385 mW continuous power dissipation at 25 °C ambient. These values are measured per IEC 60134 and documented in Table 6 of the PMN25EN datasheet; actual performance depends on copper area, layer count, and airflow.

Can PMN25EN replace older NXP PMN25EN variants or pin-compatible parts?

PMN25EN is the current Nexperia part number for this device; earlier NXP-branded versions (e.g., pre-2017) are functionally identical and fully interchangeable. It is not pin-compatible with SO-8 or TO-252 MOSFETs due to its SOT457 footprint. Cross-references like PMN25EN,115 indicate tape-and-reel packaging-no electrical or mechanical differences exist between variants. Always confirm marking code "T8" and date code on physical units to ensure authenticity when sourcing PMN25EN.