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Nexperia USA Inc. PMN25ENEAH

Part No.:
PMN25ENEAH
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-74, SOT-457
Datasheet:
AetrixPMN25ENEAH.pdf
Description:
SMALL SIGNAL MOSFET FOR AUTOMOTI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,994

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Product details

Overview

PMN25ENEAH from Nexperia is a 30 V, 6.4 A N-channel Trench MOSFET in TSOP6 (SOT457) package, optimized for low-side switching with 17 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, AEC-Q101 qualified for automotive relay drivers and high-speed line drivers.

For engineers reviewing the PMN25ENEAH datasheet, PMN25ENEAH pinout, PMN25ENEAH application, or PMN25ENEAH equivalent, this device supports logic-level gate drive (VGS(th) = 1.5 V typ), operates up to 175 °C junction temperature, and delivers ESD protection >2 kV HBM - critical for robust industrial and automotive power control designs.

Technical Context

This discrete N-channel enhancement-mode MOSFET uses Trench technology to achieve low on-resistance and fast switching (td(on) = 4 ns, tf = 7 ns) with controlled gate charge (QG(tot) = 9.5–14 nC). Its 6-pin TSOP6 package integrates four drain terminals for enhanced thermal and current handling.

The device features an integrated source-drain diode (VSD = 0.7–1.2 V at IS = 1.5 A), supports unclamped avalanche energy of 17.4 mJ, and maintains RDS(on) stability across temperature (29–41 mΩ at Tj = 175 °C).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V maximum - supports 24 V automotive and industrial bus systems with margin.
RDS(on) 17 mΩ typ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 6.4 A.
ID 6.4 A continuous at Tamb = 25 °C - suitable for medium-power load switching.
VGS(th) 1.5 V typical - ensures reliable turn-on with 3.3 V or 5 V logic-level microcontrollers.
ESD Rating 2000 V HBM - protects against handling damage in automated SMT assembly lines.
Tj(max) 175 °C - allows operation in under-hood automotive environments without derating.
QGD 2.15 nC - minimizes Miller-induced switching instability in high-dV/dt applications.

Pinout & Package

Package: TSOP6 (SOT457), surface-mounted plastic package with exposed drain pad; 3.0 × 2.5 mm footprint, 1.3 mm height, six leads.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6 Drain (D) Four parallel drain connections reduce package inductance and improve thermal spreading to PCB copper.
3 Gate (G) Single gate input with 2 Ω typical gate resistance - compatible with standard gate drivers without external series resistor.
4 Source (S) Source reference node; internal connection to substrate - used for current sensing and feedback in low-side configurations.

Key Features

Feature Design Value
Logic-level gate drive VGS(th) = 1.5 V typ enables direct interface with 3.3 V/5 V MCUs without level-shifting.
AEC-Q101 qualification Validated for automotive-grade reliability including HTOL, TC, and ESD stress per AEC standard.
Trench MOSFET architecture Delivers 24% lower RDS(on) vs planar equivalents at same die size, improving power density.
Multi-drain terminal layout Four drain pins reduce current crowding and lower effective thermal resistance (Rth(j-sp) = 15–20 K/W).
Integrated body diode VSD = 0.7 V typ supports freewheeling in inductive loads without external diode.

Applications

Automotive Relay Driver Industrial PLC Output Stage

Use Scenario: Driving 12 V/24 V electromagnetic relays in vehicle body control modules.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current with fast turn-off (tf = 7 ns) to suppress back-EMF spikes.

Use Value: 17 mΩ RDS(on) limits coil power loss to <0.7 W at 6 A, reducing thermal stress in compact BCM housings.

Use Scenario: Solid-state output stage in programmable logic controller (PLC) digital output modules.

IC Role / Device Role / Timing Role: High-reliability load switch interfacing with 24 V DC field devices (solenoids, indicators).

Use Value: AEC-Q101 qualification and 175 °C Tj(max) ensure stable operation in uncooled industrial enclosures up to 85 °C ambient.

High-Speed Line Driver USB-C Power Path Switch

Use Scenario: Transmitting TTL/CMOS signals over long cables in factory automation networks.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull line driver configuration with sub-10 ns switching.

Use Value: Low QGD (2.15 nC) and Ciss = 440 pF minimize signal distortion and enable >10 MHz data rates.

Use Scenario: Bidirectional 5 V/3 A power path switch in USB-C peripheral docking stations.

IC Role / Device Role / Timing Role: Low-RDS(on) load switch managing VBUS routing with minimal voltage drop (<34 mV at 2 A).

Use Value: Logic-level compatibility allows direct control from USB PD controller GPIOs; ESD rating protects against connector hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3025LSD-13 RDS(on) = 25 mΩ @ 4.5 V; SO-8 package; no AEC-Q101 qualification. Larger footprint, higher thermal resistance (Rth(j-a) ≈ 62 K/W), limited to commercial-temp industrial use. Select when cost sensitivity outweighs automotive qualification and thermal performance.
IPB032N04LG RDS(on) = 3.2 mΩ @ 10 V; TO-263 package; 40 V rating; higher gate charge (QG = 33 nC). Higher current capability (120 A pulsed) but slower switching and incompatible SMT footprint. Select only for high-current, low-loss requirements where board space and switching speed are secondary.

Compared with DMN3025LSD-13 and IPB032N04LG, PMN25ENEAH offers the optimal balance of AEC-Q101 compliance, compact TSOP6 packaging, and logic-level drive - making it uniquely suited for space-constrained, thermally demanding automotive and industrial low-side switches.

Availability

PMN25ENEAH is available at Aetrix Electronics and suitable for automotive relay drivers, industrial PLC outputs, high-speed line drivers, and USB-C power path switching requiring stable component supply and full traceability.

Supply support for PMN25ENEAH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

This device belongs to Nexperia's Automotive-Qualified TrenchMOS portfolio, engineered specifically for robust, low-RDS(on) switching in harsh-environment automotive and industrial control systems.

FAQ

Is PMN25ENEAH pin-compatible with other TSOP6 MOSFETs?

No - PMN25ENEAH uses a unique 4-drain, 1-gate, 1-source pinout (pins 1/2/5/6 = D, 3 = G, 4 = S). Standard TSOP6 logic-level MOSFETs like PMN20XNEA use different pin assignments; PCB layout must match the exact pinning in Table 2 of the datasheet.

What is the maximum continuous drain current at 100 °C ambient?

At Tamb = 100 °C, the maximum continuous drain current is 4.5 A (per Table 5), determined by thermal derating due to Rth(j-a) = 195–225 K/W and Ptot limit of 1.7 W under FR4 single-sided copper conditions.

Does PMN25ENEAH include built-in gate protection?

Yes - it features integrated ESD protection rated >2 kV HBM (Class H2), verified per JESD22-A114. No external gate Zener or RC snubber is required for standard handling and logic-level drive, though layout best practices for noise immunity still apply.

Can PMN25ENEAH be used in synchronous rectification?

No - it is not optimized for synchronous rectifier operation. Its body diode reverse recovery time (trr = 11 ns) and Qr = 4 nC are suitable for freewheeling, but lack the ultra-low Qrr and co-packaged dual-die structure required for high-frequency SR in SMPS topologies.

PMN25ENEAH Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
24mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
597 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
560mW (Ta), 6.25mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PMN25ENEAH FAQ

1.How can I place an order for PMN25ENEAH through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN25ENEAH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN25ENEAH reliable?

The price and inventory of PMN25ENEAH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN25ENEAH is usually 5 days.

3.What payment methods are accepted for PMN25ENEAH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN25ENEAH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN25ENEAH?

PMN25ENEAH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN25ENEAH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN25ENEAH?

For technical support, including PMN25ENEAH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN25ENEAH requirements.

6.How does Aetrix verify that PMN25ENEAH is sourced from the original manufacturer or authorized distributors?

All PMN25ENEAH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN25ENEAH meets industry standards.

7.What is the process for return or replacement of PMN25ENEAH?

All PMN25ENEAH units undergo pre-shipment inspection (PSI). If there is an issue with PMN25ENEAH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN25ENEAH part is unused and in its original packaging.

Return procedure for PMN25ENEAH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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