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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN25ENEH

Name: PMN25ENEH
Brand: Nexperia USA Inc.
SKU: PMN25ENEH
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN25ENEH

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN25ENEH.pdf

Description:: MOSFET N-CH 30V 6.1A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:4,425

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Product details

Overview

PMN25ENEH from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, designed for low-side switching with logic-level gate drive compatibility (V_GS(th) = 1.5 V typ), R_DS(on) = 17 mΩ @ V_GS = 10 V / I_D = 6.1 A, and fast switching (t_r = 23 ns, t_f = 30 ns). It serves in relay drivers, high-speed line drivers, and load-switching circuits requiring compact SMD footprint and ESD robustness (>2 kV HBM).

For engineers reviewing the PMN25ENEH datasheet, PMN25ENEH pinout, PMN25ENEH application, or PMN25ENEH equivalent, this page delivers verified electrical parameters, thermal derating curves, gate charge behavior, safe operating area limits, and real-world design implications for PCB layout, thermal management, and drive circuit selection.

Technical Context

This MOSFET employs Trench MOSFET technology to achieve low R_DS(on) and high transconductance (g_fs = 24 S typ) while maintaining stable threshold voltage (V_GS(th) = 1.5 V typ, ±1.0 V over temperature). Its 6-pin TSOP6 package integrates four drain terminals (pins 1, 2, 5, 6) for enhanced current handling and thermal spreading.

The device supports logic-level gate drive down to 4.5 V (R_DS(on) = 22 mΩ @ V_GS = 4.5 V), features integrated source-drain diode (V_SD = 0.7–1.2 V), and exhibits low gate charge (Q_G(tot) = 12.6–18 nC) enabling efficient high-frequency switching in DC-DC converters and motor control stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines absolute upper limit for drain-source blocking voltage in low-voltage power rails.
R_DS(on)	17 mΩ @ V_GS = 10 V, I_D = 6.1 A, T_j = 25 °C - enables <100 mW conduction loss at 6 A, critical for thermally constrained PCBs.
Q_G(tot)	12.6–18 nC - determines gate driver current requirement and switching transition time in PWM applications.
t_r/t_f	23 ns / 30 ns @ V_DS = 15 V, I_D = 5.5 A, R_G(ext) = 6 Ω - supports >1 MHz switching without excessive EMI or shoot-through risk.
V_GS(th)	1.5 V typical - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting.
ESD Rating	>2 kV HBM - provides robustness against handling-induced static discharge during assembly and testing.
P_tot	1.4 W @ T_amb = 25 °C on FR4 PCB (6 cm² drain pad) - sets practical power-handling ceiling for passive-cooled designs.

Pinout & Package

Package: TSOP6 (SOT457), surface-mounted plastic package with 6 leads, 3.0 mm × 2.5 mm footprint, 1.3 mm height, and exposed drain paddle for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals reduce bond-wire inductance and improve thermal path to PCB copper; must be connected to same net and large copper pour.
3	Gate (G)	High-impedance control input; requires low-inductance gate resistor (≤10 Ω) and local decoupling to suppress ringing.
4	Source (S)	Reference node for gate drive and current sensing; connects to ground or low-side return path; shared with internal body diode cathode.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on with 3.3 V or 5 V MCU outputs-eliminates need for external level shifters in embedded control.
Low R_DS(on) at 4.5 V	22 mΩ @ V_GS = 4.5 V enables efficient operation in battery-powered systems with limited supply headroom.
Fast switching speed	53 ns total switching time (t_r + t_f) reduces switching losses in high-frequency SMPS and Class-D amplifiers.
Integrated ESD protection	HBM >2 kV allows direct handling and board-level integration without additional transient suppression components.
Multi-drain configuration	Four drain pins lower package resistance and thermal impedance (R_th(j-sp) = 15–20 K/W), improving reliability under pulsed loads.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in PLC I/O modules and industrial controllers to reduce wear, bounce, and acoustic noise.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current of 24 V DC relays with 50–100 mA hold current.

Use Value: Enables solid-state reliability, 10× faster actuation (<100 µs), and elimination of contact arcing-critical for high-cycle-count automation.

Use Scenario: Driving terminated RS-485 or CAN bus stubs in multi-drop communication networks with tight timing budgets.

IC Role / Device Role / Timing Role: Active pull-down element in differential line driver output stage, toggling at up to 10 Mbps.

Use Value: Fast fall time (30 ns) ensures clean edge integrity and minimizes inter-symbol interference in high-speed digital links.

Low-Side Load Switch

Switching Power Supply

Use Scenario: Enabling/disabling 5 V or 12 V peripheral rails (e.g., USB ports, sensors, displays) in portable and embedded systems.

IC Role / Device Role / Timing Role: Controlled series switch between power source and load, with soft-start via gate RC network.

Use Value: Low R_DS(on) (17 mΩ) limits voltage drop to <60 mV at 3.5 A, preserving regulation margin and reducing self-heating.

Use Scenario: Synchronous rectifier or main switch in buck converters for point-of-load regulation in FPGA/CPU power supplies.

IC Role / Device Role / Timing Role: High-efficiency switching element operating at 500 kHz–2 MHz with gate charge optimized for driver IC compatibility.

Use Value: Q_G(tot) ≤18 nC and low C_iss (597 pF) minimize driver losses and enable stable loop response with standard gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 22 mΩ @ V_GS = 4.5 V; higher V_GS(th) (1.8 V min); same TSOP6 package.	Slightly less sensitive to marginal gate drive; lower peak current rating (I_D = 5.7 A vs. 6.1 A).	Prefer when gate drive is noisy or underspecified; verify V_GS(th) margin at elevated temperature.
AO3400	R_DS(on) = 28 mΩ @ V_GS = 10 V; higher Q_G (22 nC); SOT-23-3 package (lower power capability).	Limited to ≤1.5 W dissipation; unsuitable for sustained >3 A loads or high-frequency switching.	Acceptable only in space-constrained, low-power (<1 W) applications where thermal performance is secondary.

Compared with DMN2004LKQ-7 and AO3400, PMN25ENEH delivers superior R_DS(on) at both 4.5 V and 10 V, lower gate charge, and higher continuous current capability-making it optimal for thermally demanding, high-efficiency, and high-speed low-side switching where PCB area and thermal headroom are constrained.

Availability

PMN25ENEH is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term sourcing continuity.

Supply support for PMN25ENEH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMN25ENEH belongs to Nexperia's TrenchMOS family-engineered specifically for high-efficiency, low-voltage power switching in consumer, industrial, and communications equipment where small size, low conduction loss, and fast switching are essential.

FAQ

What is the maximum continuous drain current for PMN25ENEH at 100 °C ambient temperature?

The maximum continuous drain current is 3.8 A at T_amb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with conditions V_GS = 10 V and T_amb = 100 °C. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures on a standard FR4 PCB.

Does PMN25ENEH have an integrated body diode, and what is its forward voltage?

Yes, PMN25ENEH includes an inherent source-drain body diode. Its forward voltage is 0.7–1.2 V at I_S = 1.4 A and T_j = 25 °C, per Table 7 (Characteristics). This diode supports freewheeling current in inductive switching applications but is not rated for reverse recovery in hard-switched topologies.

Can PMN25ENEH be used with a 3.3 V microcontroller GPIO without a gate driver?

Yes-its typical V_GS(th) is 1.5 V and R_DS(on) is 22 mΩ at V_GS = 4.5 V, so a 3.3 V GPIO can fully enhance the channel for moderate loads (<2 A). For higher currents or faster switching, a dedicated gate driver improves rise/fall times and reduces Miller plateau effects.

What is the recommended PCB layout for thermal performance of PMN25ENEH?

Nexperia specifies a 6 cm² tin-plated copper pad connected to all four drain pins for optimal thermal performance. The pad must be single-sided, FR4-based, and use standard reflow soldering profile per Figure 19. Avoid thermal relief spokes; use multiple vias to inner/ground planes only if they do not compromise the 6 cm² effective area.

PMN25ENEH Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 597 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 560mW (Ta), 6.25mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN25ENEH FAQ

1.How can I place an order for PMN25ENEH through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN25ENEH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN25ENEH reliable?

The price and inventory of PMN25ENEH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN25ENEH is usually 5 days.

3.What payment methods are accepted for PMN25ENEH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN25ENEH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN25ENEH?

PMN25ENEH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN25ENEH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN25ENEH?

For technical support, including PMN25ENEH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN25ENEH requirements.

6.How does Aetrix verify that PMN25ENEH is sourced from the original manufacturer or authorized distributors?

All PMN25ENEH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN25ENEH meets industry standards.

7.What is the process for return or replacement of PMN25ENEH?

All PMN25ENEH units undergo pre-shipment inspection (PSI). If there is an issue with PMN25ENEH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN25ENEH part is unused and in its original packaging.

Return procedure for PMN25ENEH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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