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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN25ENEX

Name: PMN25ENEX
Brand: Nexperia USA Inc.
SKU: PMN25ENEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN25ENEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN25ENEX.pdf

Description:: MOSFET N-CH 30V 6.1A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

PMN25ENEX from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in TSOP6 (SOT457) package, designed for low-side switching with logic-level gate drive compatibility, 17 mΩ R_DS(on) at V_GS = 10 V and 6.1 A, and ESD protection >2 kV HBM. It serves in high-speed line drivers, relay drivers, and load-switching circuits where fast switching and compact SMD footprint are critical.

For engineers reviewing the PMN25ENEX datasheet, PMN25ENEX pinout, PMN25ENEX application, or PMN25ENEX equivalent, this page delivers verified electrical parameters, thermal behavior under FR4 PCB mounting, gate charge dynamics, safe operating area limits, and real-world use context for industrial and embedded power control designs.

Technical Context

This MOSFET uses Trench technology to achieve low on-resistance and fast switching-typical t_d(on) = 8 ns, t_r = 23 ns, t_d(off) = 33 ns, and t_f = 30 ns with 6 Ω external gate resistor. Its gate threshold voltage (V_GS(th)) ranges 1–2.5 V at 250 µA, enabling reliable turn-on with 3.3 V or 5 V logic signals.

Thermal performance is defined for two mounting conditions: R_th(j-a) = 195–225 K/W (standard FR4 footprint) and 55–63 K/W (6 cm² drain pad), supporting continuous I_D up to 6.1 A at 25 °C ambient. The integrated source-drain diode has V_SD = 0.7–1.2 V at 1.4 A and T_j = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines absolute upper limit for drain-source blocking in low-voltage DC systems.
R_DS(on)	17 mΩ typical at V_GS = 10 V, I_D = 6.1 A, T_j = 25 °C - enables <100 mW conduction loss at 6 A.
Q_G(tot)	12.6–18 nC - determines gate drive energy requirement and switching speed with given driver capability.
I_D (continuous)	6.1 A at T_amb = 25 °C - achievable with standard FR4 PCB layout and no forced airflow.
V_GS(th)	1.5 V typical - ensures full enhancement with 3.3 V microcontroller GPIO without level-shifting.
C_iss	597 pF - impacts high-frequency gate drive impedance and EMI filtering design.
P_tot	1.4 W at T_amb = 25 °C - sets thermal derating envelope for sustained operation.

Pinout & Package

Package: TSOP6 (SOT457), surface-mounted plastic package with 6 leads, 3.0 × 2.5 mm body, 0.95 mm height, and exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals - reduce bond wire inductance and improve current sharing and thermal spreading to PCB copper.
3	Gate (G)	Single gate input - requires low-impedance drive due to 8 Ω internal gate resistance and 12.6–18 nC total charge.
4	Source (S)	Source reference node - connects directly to ground plane; forms return path for load current and gate drive loop.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.5 V - compatible with 3.3 V and 5 V digital outputs without external level shifters.
Low R_DS(on) at 4.5 V	22–32 mΩ - maintains efficiency in battery-powered or low-V_CC systems where gate voltage is limited.
ESD protection	>2 kV HBM - reduces need for external transient suppression in board-level ESD environments.
Fast switching	t_r/t_f < 30 ns - supports PWM frequencies above 500 kHz with minimal switching loss.
Trench MOSFET architecture	Optimized cell density and reduced channel resistance - achieves higher current density per mm² than planar alternatives.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in PLC I/O modules requiring fast coil energization/de-energization cycles.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current path with precise timing control.

Use Value: 8 ns turn-on delay and 30 ns fall time enable sub-10 µs relay actuation control, reducing mechanical wear and improving cycle accuracy.

Use Scenario: Transmitting TTL/CMOS logic signals across noisy industrial backplanes with controlled edge rates.

IC Role / Device Role / Timing Role: Active pull-down element shaping signal edges and absorbing capacitive load transients.

Use Value: 22–32 mΩ R_DS(on) at 4.5 V ensures clean low-voltage logic transitions even under 50 pF load capacitance.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling power to peripheral subsystems (e.g., sensors, displays) in portable medical devices.

IC Role / Device Role / Timing Role: Controlled power path switch with minimal voltage drop and leakage during off-state.

Use Value: 1 µA I_DSS at 30 V and 25 °C ensures negligible standby current, extending battery life beyond 1 year in sleep mode.

Use Scenario: Replacing Schottky diodes in 12 V output buck converters for improved efficiency at light-to-moderate loads.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal with tight timing alignment.

Use Value: 17 mΩ R_DS(on) cuts conduction loss by >60% vs. 0.4 V Schottky, raising converter efficiency from 88% to 92% at 3 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 28 mΩ @ 4.5 V; Q_G = 7.5 nC; SOT-563 package (smaller, 2.1 × 1.6 mm)	Lower gate charge enables faster switching but higher on-resistance limits current handling to 4.5 A max.	Prefer when board space is constrained and peak current ≤4.5 A; avoid if thermal margin below 60 °C is required.
PSMN1R5-30YL	R_DS(on) = 1.5 mΩ @ 10 V; TO-220 package; P_tot = 104 W; not logic-level (V_GS(th) = 2–4 V)	Requires gate driver for 3.3 V logic; suited for high-current (>20 A), high-power industrial loads.	Choose only when >10 A continuous current or >5 W dissipation is needed; incompatible with direct MCU GPIO drive.

Compared with DMN2004LKQ-7 and PSMN1R5-30YL, PMN25ENEX uniquely balances logic-level drivability, 6.1 A capability, and 3.0 × 2.5 mm SOT457 footprint-making it optimal for space-constrained, medium-current industrial controls where gate drive simplicity and thermal manageability are jointly critical.

Availability

PMN25ENEX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and synchronous rectifier circuits requiring stable component supply across production lifecycles.

Supply support for PMN25ENEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.

The PMN25ENEX belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for efficient, compact, and robust low-voltage power switching in industrial automation, consumer electronics, and automotive body-control modules.

FAQ

What is the maximum continuous drain current for PMN25ENEX at 100 °C ambient temperature?

The maximum continuous drain current is 3.8 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This reflects thermal derating due to reduced heat dissipation capacity at elevated ambient temperatures, assuming standard FR4 PCB mounting with single-sided copper.

Does PMN25ENEX have an integrated body diode, and what is its forward voltage?

Yes, PMN25ENEX includes an inherent source-drain body diode. At I_S = 1.4 A and T_j = 25 °C, the source-drain forward voltage (V_SD) is 0.7–1.2 V, as listed in Table 7 (Characteristics). This diode supports freewheeling in inductive load applications like relay coils.

Can PMN25ENEX be used with 3.3 V microcontroller GPIO without a gate driver?

Yes. With a typical V_GS(th) of 1.5 V and guaranteed ≤2.5 V, PMN25ENEX fully enhances at 3.3 V. At V_GS = 4.5 V, R_DS(on) remains low (22–32 mΩ), delivering usable current while maintaining logic-level compatibility.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMN25ENEX?

R_th(j-sp) is 15–20 K/W, per Table 6 (Thermal characteristics). This value characterizes heat transfer from die to PCB solder joint and is critical for estimating local temperature rise under pulsed or short-duration loads where ambient convection is less dominant.

PMN25ENEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 597 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 560mW (Ta), 6.25mW (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN25ENEX FAQ

1.How can I place an order for PMN25ENEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN25ENEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN25ENEX reliable?

The price and inventory of PMN25ENEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN25ENEX is usually 5 days.

3.What payment methods are accepted for PMN25ENEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN25ENEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN25ENEX?

PMN25ENEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN25ENEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN25ENEX?

For technical support, including PMN25ENEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN25ENEX requirements.

6.How does Aetrix verify that PMN25ENEX is sourced from the original manufacturer or authorized distributors?

All PMN25ENEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN25ENEX meets industry standards.

7.What is the process for return or replacement of PMN25ENEX?

All PMN25ENEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN25ENEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN25ENEX part is unused and in its original packaging.

Return procedure for PMN25ENEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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