NXP Semiconductors PMN25UN,115

Overview

PMN25UN from Nexperia is a 20 V, 6 A N-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, designed for low-side switching with low threshold voltage (0.4–1.0 V), 23 mΩ R_DS(on) at V_GS = 4.5 V, and fast switching (t_d(on) = 9 ns, t_f = 59 ns). It serves in relay drivers, high-speed line drivers, and loadswitch applications requiring compact, efficient power control.

For engineers reviewing the PMN25UN datasheet, PMN25UN pinout, PMN25UN application, or PMN25UN equivalent, key selection criteria include its 20 V V_DS, 6 A continuous drain current at 25 °C, 23 mΩ on-resistance, 6.4 nC total gate charge, and SOT457 thermal performance with R_th(j-a) as low as 82 K/W on 6 cm² drain pad.

Technical Context

This N-channel MOSFET uses Trench MOSFET technology to achieve low V_GS(th) (0.7 V typ) and low R_DS(on), enabling direct drive from 1.8 V and 2.5 V logic. Its four-drain-pin configuration (Pins 1, 2, 5, 6) enhances current handling and thermal dissipation in the SOT457 package.

Dynamic characteristics include 470 pF C_iss, 72 pF C_rss, and 109 ns t_d(off), supporting high-frequency switching in DC-DC converters and digital load control. The device operates across –55 °C to 150 °C junction temperature with 1.3 A body diode forward current capability.

Key Specifications

Pinout & Package

SOT457 (TSOP6) plastic surface-mounted package: 1.1 mm height, 2.9 mm × 1.6 mm footprint, 6-lead leadframe with exposed drain pads on Pins 1, 2, 5, and 6 for enhanced thermal and current handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Compared with DMN2004LK-7, PMN25UN delivers 43 % lower R_DS(on) and 43 % higher current in the same pin count; versus PSMN017-20YL, it trades 50 % smaller footprint and 57 % lower gate charge for 50 % higher on-resistance-ideal for space-constrained, medium-current switching where thermal design leverages the SOT457 drain-pad layout.

Availability

PMN25UN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for PMN25UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PMN25UN belongs to Nexperia's TrenchMOS low-voltage power MOSFET family, engineered for high-efficiency, space-optimized switching in battery-powered and thermally constrained applications.

FAQ

What is the maximum continuous drain current of the PMN25UN at 100 °C ambient temperature?

The PMN25UN supports 3.6 A continuous drain current at T_amb = 100 °C with V_GS = 4.5 V, as specified in the Limiting Values table. This derating reflects thermal limits under standard FR4 PCB mounting conditions and ensures reliable operation in enclosed industrial enclosures or high-temperature environments where the PMN25UN remains a viable low-side switch solution.

Does the PMN25UN have a built-in body diode, and what is its forward voltage?

Yes, the PMN25UN integrates a source-drain body diode with V_SD = 0.7 V typical at I_S = 1.3 A and T_j = 25 °C. This diode enables freewheeling in inductive load applications like relay driving and eliminates the need for an external catch diode in many low-power switching circuits using the PMN25UN.

Can the PMN25UN be driven directly by a 1.8 V GPIO without a level shifter?

Yes-the PMN25UN has a gate-source threshold voltage range of 0.4 V to 1.0 V, with 0.7 V typical, ensuring full enhancement at V_GS = 1.8 V. Its low 6.4 nC total gate charge further allows direct drive from most 1.8 V microcontrollers, making the PMN25UN suitable for ultra-low-voltage IoT and wearable power management designs.

What is the thermal resistance from junction to ambient for the PMN25UN on a standard FR4 PCB?

On a standard FR4 PCB (single-sided copper, tin-plated, no extended drain pad), the PMN25UN exhibits R_th(j-a) = 204–235 K/W. With a 6 cm² drain mounting pad, this improves to 82–94 K/W-critical for sustaining 6 A continuous current in compact, unventilated applications where thermal management relies on PCB copper area rather than heatsinks.

How does the four-drain-pin configuration of the PMN25UN improve performance compared to standard TSOP6 MOSFETs?

The PMN25UN allocates Pins 1, 2, 5, and 6 exclusively to the drain, effectively quadrupling bond-wire and leadframe cross-section for current conduction and heat extraction. This reduces package resistance and thermal impedance, allowing the PMN25UN to deliver 6 A continuous current with lower temperature rise and improved reliability versus conventional single-drain TSOP6 MOSFETs rated at similar currents.