NXP Semiconductors PMN27UN,135

Overview

PMN27UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT457 (TSOP6) package, designed as a low-voltage load switch with 20 V drain-source rating, 5.7 A continuous drain current at 4.5 V gate drive, and ultra-low R_DS(on) of 27 mΩ at V_GS = 4.5 V and I_D = 2 A. It serves as a high-efficiency switching element in battery-powered motor control and DC-DC converter driver stages.

For engineers reviewing the PMN27UN datasheet, PMN27UN pinout, PMN27UN application, or PMN27UN equivalent, this page delivers verified electrical parameters, thermal behavior, gate charge characteristics, junction-to-solder-point thermal resistance, and real-world use context for embedded power management design.

Technical Context

The PMN27UN employs TrenchMOS™ technology to achieve low threshold voltage (0.4–0.7 V), fast switching (t_d(on) = 8.5 ns, t_f = 16 ns), and stable R_DS(on) across temperature - 39–56 mΩ at V_GS = 1.8 V and I_D = 1.5 A. Its gate charge profile shows Q_g(tot) = 10.6 nC, Q_gs = 1.8 nC, and Q_gd = 2.1 nC under 10 V V_DD/4.5 V V_GS conditions.

It operates within a junction temperature range of −55 °C to +150 °C, supports ±8 V gate-source voltage, and features integrated source-drain diode with V_SD = 0.8–1.2 V at I_S = 1.7 A. Thermal resistance from junction to solder point is 70 K/W on a metal-clad board.

Key Specifications

Pinout & Package

SOT457 (TSOP6) plastic surface-mounted package with 6 leads; compact 3.1 × 2.7 mm footprint and 1.1 mm height; optimized for automated assembly and thermal performance on metal-clad boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the PMN27UN offers the lowest V_GS(th) range and best R_DS(on) consistency at 1.8 V, making it optimal for ultra-low-power microcontroller interfaces and thermally constrained PCBs.

Availability

PMN27UN is available at Aetrix Electronics and suitable for battery-powered motor control, notebook computer load switching, set-top box power supplies, and DC-DC converter driver applications requiring stable component supply and long-term industrial availability.

Supply support for PMN27UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017, with focus on automotive, industrial, computing, and consumer markets.

The PMN27UN belongs to Nexperia's TrenchMOS™ ultra-low-level FET product line, engineered specifically for high-efficiency, low-voltage switching in space-constrained portable and embedded power systems.

FAQ

What is the maximum continuous drain current for PMN27UN at 70 °C solder point temperature?

The PMN27UN supports 4.5 A continuous drain current at T_sp = 70 °C and V_GS = 4.5 V, per its limiting values table. This derating reflects thermal constraints of the SOT457 package on standard PCBs. At 25 °C, the rating increases to 5.7 A. Designers must apply the normalized derating curve (Figure 2) when estimating safe operating current in real thermal environments.

Does PMN27UN support 1.8 V logic-level gate drive?

Yes, the PMN27UN has a gate-source threshold voltage range of 0.4–0.7 V, and its R_DS(on) is specified down to V_GS = 1.8 V (39–56 mΩ at I_D = 1.5 A). This makes PMN27UN fully compatible with 1.8 V microcontrollers and low-power ASICs without external level-shifting circuitry.

What is the safe operating area (SOA) limit for PMN27UN at 10 µs pulse width?

At t_p = 10 µs, the PMN27UN SOA supports up to 22.9 A peak drain current at V_DS ≤ 1 V, decreasing with higher V_DS. The SOA boundary is defined by R_DS(on) limit (V_DS/I_D) and thermal limits - Figure 3 in the datasheet provides the full graphical SOA envelope for DC, 10 µs, 100 µs, and longer pulses.

Is PMN27UN pin-compatible with other SOT457 MOSFETs like PMN28EN?

No, PMN27UN is not pin-compatible with PMN28EN. While both use SOT457, PMN28EN is a P-channel device with reversed pin functions (e.g., pin 4 = drain, pins 1/2/5/6 = source), whereas PMN27UN is N-channel with pins 1/2/5/6 = drain and pin 4 = source. Swapping them would cause functional failure or damage.

What is the typical reverse transfer capacitance (Crss) of PMN27UN and why does it matter?

The PMN27UN has a typical Crss of 125 pF at V_DS = 10 V. Crss directly impacts Miller effect during switching - lower Crss reduces gate drive demand and improves noise immunity. With Crss = 125 pF and Q_gd = 2.1 nC, the PMN27UN achieves stable high-speed operation even with moderate gate resistors (e.g., 6 Ω), minimizing risk of shoot-through in half-bridge configurations.