Nexperia USA Inc. PMN27UP,115
- Part No.:
- PMN27UP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN27UP,115.pdf
- Description:
- MOSFET P-CH 20V 5.7A 6TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:6,744
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Product details
Overview
PMN27UP from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for −20 V drain-source voltage, −5.7 A continuous drain current at 25 °C, and 27 mΩ typical RDS(on) at VGS = −4.5 V and ID = −2.4 A. It serves as a high-side load switch or high-speed line driver in compact power management circuits.
For engineers reviewing the PMN27UP datasheet, PMN27UP pinout, PMN27UP application, or PMN27UP equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge characteristics, junction temperature derating curves, and real-world switching timing values - all confirmed from Nexperia's official Rev. 1 product data sheet dated 13 July 2011.
Technical Context
This device uses Trench MOSFET technology to achieve low on-resistance and fast switching with gate threshold voltage of −0.7 V (typical), enabling reliable turn-on from 1.8 V logic-level drive. Its −20 V VDS rating and −8 V maximum gate-source voltage support robust operation in 3.3 V and 5 V rail systems.
The six-pin SOT457 package integrates four parallel drain terminals (pins 1, 2, 5, 6), one gate (pin 3), and one source (pin 4), optimizing thermal conduction and current handling. Dynamic parameters include 21 nC total gate charge, 2.8 nC gate-drain charge, and 27 ns fall time - confirming suitability for high-frequency switching up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V: Maximum blocking voltage for high-side switch configurations in 12 V or lower systems. |
| ID (continuous) | −5.7 A at Tamb = 25 °C: Supports sustained load currents up to ~5.7 A with standard FR4 PCB mounting pad (6 cm²). |
| RDS(on) | 27 mΩ typ. @ VGS = −4.5 V, ID = −2.4 A, Tj = 25 °C: Enables <150 mW conduction loss at 2 A, critical for thermally constrained designs. |
| QG(tot) | 21 nC typ.: Low gate charge reduces driver power demand and supports efficient PWM control at >100 kHz. |
| tf | 27 ns typ.: Fast fall time minimizes switching losses during turn-off transitions in high-frequency DC-DC or load-switching applications. |
| VGS(th) | −0.7 V typ.: Ensures full enhancement with 1.8 V logic outputs, eliminating need for level-shifting in low-voltage microcontroller interfaces. |
| Ciss | 2340 pF typ.: Input capacitance impacts gate drive loop stability and rise/fall time consistency under varying load conditions. |
Pinout & Package
SOT457 (TSOP6) plastic surface-mounted package with 6 leads; dimensions per IEC/JEDEC SC-74 outline: 3.1 mm × 2.7 mm × 1.1 mm, featuring exposed drain paddle for enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain terminals connected internally; used for high-current path and thermal conduction to PCB copper pour. |
| 3 | Gate (G) | Control input requiring ≤100 nA leakage at −8 V; driven directly by 1.8 V–5 V logic without external level shift. |
| 4 | Source (S) | Reference node for gate drive; tied to system ground or positive rail depending on high-side vs. low-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| 1.8 V logic-compatible gate drive | Threshold voltage −0.7 V (typ.) enables direct interface with 1.8 V/2.5 V/3.3 V microcontrollers and FPGAs. |
| Low RDS(on) at low VGS | 57 mΩ max @ VGS = −1.8 V, ID = −1.8 A ensures usable on-state performance even with weak gate drive. |
| Fast switching speed | 27 ns fall time + 20 ns rise time supports clean edge transitions in digital load switching and relay driving. |
| Trench MOSFET architecture | Enables higher cell density and lower specific on-resistance versus planar MOSFETs, improving power efficiency in space-constrained layouts. |
| High peak current capability | 23 A single-pulse peak drain current allows safe inrush current handling during hot-plug or capacitive load switching. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules where fast de-energization prevents contact arcing. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil return path to ground; operates in static on/off mode with <100 ns transition control. Use Value: 27 ns fall time ensures rapid coil current decay, reducing relay release time to <1 ms and extending mechanical life. |
Use Scenario: Transmitting TTL/CMOS logic signals across noisy factory-floor cabling with EMI resilience. IC Role / Device Role / Timing Role: Active pull-up stage in open-drain bus interface, providing fast rising edges and controlled slew rate. Use Value: 20 ns rise time and 2340 pF Ciss enable clean 10 MHz signal integrity without overshoot when driving 50 Ω loads. |
| High-Side Load Switch | Switching Power Circuit |
|
Use Scenario: Enabling/disabling power to USB peripherals or sensor subsystems in battery-powered IoT nodes. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch between battery rail and load; controlled by MCU GPIO. Use Value: 27 mΩ RDS(on) limits voltage drop to <135 mV at 5 A, preserving >97% supply efficiency while supporting 1.8 V logic control. |
Use Scenario: Synchronous rectification or PWM-controlled DC bias in compact DC-DC converters for portable medical devices. IC Role / Device Role / Timing Role: Low-side or high-side switching element in buck topology; operated at 200–500 kHz with gate charge optimized for minimal driver loss. Use Value: 21 nC QG(tot) and 2.8 nC QGD reduce Miller-induced shoot-through risk and allow use of low-power gate drivers like TC4420. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UFB-7 | −20 V VDS, −4.2 A ID, 35 mΩ RDS(on) @ −4.5 V; smaller X2-DFN0603-3 package (0.6 × 0.3 mm). | Lower current rating and no multi-drain pinning; suited for ultra-compact footprint but less thermal margin. | Select when board area is critical and peak load current stays below 4 A; verify thermal relief via 0.3 mm² copper pour. |
| SI2301BDS-T1-BE3 | −20 V VDS, −2.7 A ID, 115 mΩ RDS(on) @ −4.5 V; SOT-23 package with single drain terminal. | Higher on-resistance and lower current capacity; limited to <2 A continuous loads with significant self-heating. | Choose only for cost-sensitive, low-power biasing or enable functions where <100 mW conduction loss is acceptable. |
Compared with DMN2053UFB-7 and SI2301BDS-T1-BE3, PMN27UP offers superior thermal performance via quad-drain SOT457 packaging, 2× lower RDS(on) than SI2301BDS, and 30% higher current rating than DMN2053UFB - making it optimal for 5 A-class high-side switching where reliability and PCB heat spreading matter.
Availability
PMN27UP is available at Aetrix Electronics and suitable for high-side load switching, relay driving, high-speed line driving, and compact DC-DC power circuits requiring stable component supply across production lifecycles.
Supply support for PMN27UP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.
The PMN27UP belongs to Nexperia's TrenchMOS P-channel portfolio designed specifically for logic-level–driven high-side power switches in space-constrained, thermally demanding applications such as portable instrumentation and smart sensors.
FAQ
What is the maximum allowable junction temperature for PMN27UP?
The absolute maximum junction temperature is 150 °C per Nexperia's datasheet Rev. 1. Operation above this limit causes permanent degradation of RDS(on) and gate oxide integrity. Derating begins at 25 °C ambient: total power dissipation drops from 1385 mW (with 6 cm² drain pad) to 540 mW at 100 °C ambient, requiring thermal design validation using Fig 1 and Fig 2.
Can PMN27UP be driven directly by a 1.8 V GPIO output?
Yes - its gate threshold voltage is −0.7 V (typical), and RDS(on) remains 57–66 mΩ at VGS = −1.8 V, enabling functional on-state operation. However, full enhancement (27 mΩ) requires ≥−4.5 V; for minimal conduction loss, use a charge pump or dual-rail driver when 1.8 V logic must deliver <100 mΩ performance.
How does the quad-drain pinning affect PCB layout and thermal performance?
Pins 1, 2, 5, and 6 are internally shorted to the drain, allowing connection to a large copper pour for heat sinking. This configuration reduces effective thermal resistance from junction-to-ambient to 78 K/W (with 6 cm² pad), versus >200 K/W for standard SOT-23. Layout must route all four pins to the same net and avoid thermal isolation gaps in the drain copper.
Is PMN27UP suitable for automotive applications?
No - the datasheet explicitly states this is a non-automotive qualified product. It lacks AEC-Q101 stress testing, automotive-grade process controls, and extended temperature validation beyond −55 °C to +150 °C. For automotive high-side switching, consider Nexperia's AS-series equivalents like PMN27EN, which undergo full AEC-Q101 qualification.
PMN27UP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 32mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2340 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 540mW (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PMN27UP,115 FAQ
1.How can I place an order for PMN27UP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN27UP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN27UP,115 reliable?
The price and inventory of PMN27UP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN27UP,115 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN27UP,115?
For technical support, including PMN27UP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN27UP,115 requirements.
6.How does Aetrix verify that PMN27UP,115 is sourced from the original manufacturer or authorized distributors?
All PMN27UP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN27UP,115 meets industry standards.
7.What is the process for return or replacement of PMN27UP,115?
All PMN27UP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN27UP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN27UP,115 part is unused and in its original packaging.
Return procedure for PMN27UP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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