Nexperia USA Inc. PMN280ENEAX

Overview

PMN280ENEAX from Nexperia is a 100 V, N-channel Trench MOSFET in SOT457 (SC-74/TSOP6) package, designed as a logic-level-compatible low-side load switch with R_DS(on) = 285 mΩ at V_GS = 10 V and T_j = 25 °C, rated for continuous drain current up to 1.2 A, and qualified to AEC-Q101 for automotive relay driver and high-speed line driver applications.

For engineers reviewing the PMN280ENEAX datasheet, PMN280ENEAX pinout, PMN280ENEAX application, or PMN280ENEAX equivalent, this device supports design of compact, thermally robust switching circuits requiring extended junction temperature operation (T_j = 175 °C), ESD-hardened gate (HBM > 2 kV), and stable on-resistance across temperature and gate voltage.

Technical Context

This discrete MOSFET uses Trench technology to achieve low R_DS(on) and fast switching (t_d(on) = 3 ns, t_f = 3 ns) with controlled gate charge (Q_G(tot) = 4.5–6.8 nC). Its dual-drain-pin configuration (Pins 1, 2, 5, 6) enhances thermal conduction and current handling in FR4 PCB layouts with 6 cm² drain pad.

The device features a built-in source-drain diode (V_SD = 0.8–1.2 V at I_S = 1.2 A), avalanche ruggedness (E_AS = 8.4 mJ), and gate threshold voltage V_GS(th) = 1.3–2.7 V, enabling reliable turn-on with 3.3 V or 5 V logic controllers without external level shifting.

Key Specifications

Pinout & Package

SOT457 (SC-74/TSOP6) surface-mount plastic package with 6 leads, 3.0 mm × 1.7 mm footprint, and exposed drain pads on four terminals for enhanced thermal dissipation. Mounting requires 6 cm² tin-plated copper area on FR4 for rated power performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMN2053UVT-7 and IPB050N10N5, PMN280ENEAX uniquely balances 100 V rating, AEC-Q101 qualification, logic-level compatibility, and SOT457 thermal performance-making it optimal for space-constrained automotive and industrial low-side switches where reliability and ease of drive are prioritized over extreme R_DS(on) or miniaturization.

Availability

PMN280ENEAX is available at Aetrix Electronics and suitable for automotive relay drivers, industrial low-side load switches, high-speed line drivers, and DC-DC synchronous rectifiers requiring stable component supply across production lifecycles.

Supply support for PMN280ENEAX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade MOSFETs, ESD protection, and logic ICs.

The PMN280ENEAX belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for robust, space-efficient switching in automotive body electronics and industrial control systems where AEC-Q101 compliance and thermal stability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C ambient temperature?

The PMN280ENEAX supports 0.9 A continuous drain current at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limits of the SOT457 package on standard FR4 PCB; actual current capability improves with larger copper area or forced airflow.

Is the gate protected against electrostatic discharge?

Yes-the device features integrated ESD protection rated >2 kV per Human Body Model (HBM, Class H2), verified per JESD22-A114. No external gate protection components are required for standard handling and assembly, though best-practice ESD controls remain recommended.

Can PMN280ENEAX be used in avalanche mode?

Yes-it is characterized for non-repetitive unclamped inductive switching with E_AS = 8.4 mJ at T_j(init) = 25 °C and I_D = 0.16 A. This enables limited energy absorption during inductive load turn-off, but repetitive avalanche operation is not guaranteed and requires careful circuit design.

What is the thermal resistance from junction to solder point?

R_th(j-sp) is 15–20 K/W, measured with the device mounted on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² mounting pad for drain (Table 6). This value enables accurate junction temperature estimation during thermal design using solder-point temperature measurements.