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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN28UNEX

Name: PMN28UNEX
Brand: Nexperia USA Inc.
SKU: PMN28UNEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN28UNEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN28UNEX.pdf

Description:: MOSFET N-CH 20V 5.5A 6TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMN28UNEX from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, designed for low-side switching with R_DS(on) = 24 mΩ at V_GS = 4.5 V and I_D = 5.5 A, fast switching (t_r = 35 ns, t_f = 14 ns), and ESD protection >2 kV HBM - deployed in relay drivers and high-speed line drivers.

For engineers reviewing the PMN28UNEX datasheet, PMN28UNEX pinout, PMN28UNEX application, or PMN28UNEX equivalent, this device supports compact, thermally efficient low-voltage switching where gate threshold (V_GS(th) = 0.45–1.0 V) enables direct drive from 1.8 V/2.5 V logic, and its 6-pin TSOP6 layout optimizes PCB space in load-switch and interface circuits.

Technical Context

This MOSFET uses Trench technology to achieve low on-resistance and fast switching with minimal gate charge (Q_G(tot) = 6.2–10 nC). Its dual-drain configuration (pins 1,2,5,6) provides enhanced current handling and thermal spreading across the FR4 PCB mounting pad.

The device operates with a low gate threshold (0.45–1.0 V) and exhibits stable R_DS(on) up to 150 °C junction temperature (36–48 mΩ at T_j = 150 °C), while its source-drain diode has V_SD = 0.7–1.2 V at I_S = 1.3 A, supporting bidirectional conduction in certain switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V maximum - defines safe blocking voltage in low-voltage DC systems like USB PD, battery management, and 12 V automotive subsystems.
R_DS(on)	24 mΩ typical at V_GS = 4.5 V, I_D = 5.5 A, T_j = 25 °C - enables <125 mW conduction loss at 5 A, reducing thermal load on small PCBs.
Q_G(tot)	6.2–10 nC - allows efficient 1–5 MHz PWM switching with low gate-drive power, suitable for synchronous buck converters and motor gate drivers.
t_r/t_f	35 ns / 14 ns - minimizes switching transition time, reducing overlap losses and enabling clean edge integrity in high-speed digital interfaces.
V_GS(th)	0.45–1.0 V - ensures reliable turn-on from 1.8 V logic (e.g., ARM Cortex-M0+ GPIO) without level-shifting circuitry.
I_D (continuous)	5.5 A at T_amb = 25 °C on FR4 (6 cm² drain pad) - supports sustained load currents in space-constrained industrial I/O modules.
ESD Rating	>2 kV HBM - eliminates need for external ESD protection in board-level transient environments such as industrial control panels.

Pinout & Package

Package: SOT457 (TSOP6), surface-mounted plastic package with exposed drain pads on pins 1, 2, 5, and 6 for thermal and current handling optimization.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals reduce effective lead inductance and improve thermal dissipation via shared copper area on PCB.
3	Gate (G)	Single low-impedance gate input; RG = 7 Ω internal - simplifies gate driver selection and reduces ringing risk in high-dI/dt applications.
4	Source (S)	Reference node for gate drive and current sensing; tied to system ground in low-side configurations.

Key Features

Feature	Design Value
Trench MOSFET architecture	Enables 24 mΩ R_DS(on) in TSOP6 footprint - delivers performance comparable to larger SO-8 devices in half the area.
Low V_GS(th) range (0.45–1.0 V)	Supports direct interfacing with 1.8 V/2.5 V microcontrollers - eliminates level shifters and reduces BOM count in portable electronics.
Fast switching (t_r = 35 ns, t_f = 14 ns)	Reduces energy loss per cycle in PWM applications - critical for efficiency in battery-powered LED drivers and sensor interface circuits.
Integrated ESD protection (>2 kV HBM)	Meets IEC 61000-4-2 Level 2 without external TVS - lowers design risk in unshielded industrial fieldbus nodes and IoT edge sensors.
Thermally optimized 6-pin layout	Four drain pins + large solderable pad enable 6.25 W P_tot at T_sp = 25 °C - sustains higher continuous current than standard SOT23-3 equivalents.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in programmable logic controllers (PLCs) with 5–12 V coil supplies and frequent actuation cycles.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current path; handles inductive kickback via integrated body diode.

Use Value: Fast turn-off (t_f = 14 ns) limits voltage overshoot during coil de-energization, reducing snubber component count and PCB area.

Use Scenario: Transmitting TTL/CMOS signals over 50 Ω coaxial or twisted-pair lines in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active pull-down stage in push-pull output buffer; complements high-side driver for rail-to-rail swing.

Use Value: Low R_DS(on) (24 mΩ) ensures <0.1 V drop at 100 mA, preserving signal integrity and timing margins up to 20 MHz.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 3.3 V or 5 V power rails to peripherals (e.g., sensors, transceivers) in embedded systems with strict inrush control.

IC Role / Device Role / Timing Role: Controlled series pass element between supply and load; gate driven by MCU GPIO with soft-start capability.

Use Value: Sub-1 V V_GS(th) allows full enhancement at 1.8 V logic levels, enabling single-supply rail control without auxiliary bias.

Use Scenario: Replacing Schottky diodes in 5–12 V output stages of DC-DC buck converters for improved efficiency in telecom and computing power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by gate driver IC; conducts during low-side phase with minimal conduction loss.

Use Value: R_DS(on) = 24 mΩ at 4.5 V gate drive cuts conduction loss by >60% vs. 0.4 V Schottky, raising converter efficiency by 1.2–1.8% at 5 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	Higher R_DS(on) (32 mΩ @ 4.5 V), same SOT457 package, lower Q_G (4.5 nC)	Better suited for ultra-low-power wake-up circuits where gate drive energy matters more than conduction loss	Select when minimizing gate charge dominates over on-resistance in battery-critical applications
PSMN017-20YL	Lower R_DS(on) (17 mΩ @ 4.5 V), larger LFPAK56 package, higher thermal resistance (R_th(j-a) = 90 K/W)	Preferred in thermally constrained but high-current scenarios where PCB real estate allows larger footprint	Select when continuous current >6 A is required and thermal vias can be added under LFPAK56 drain pad

Compared with DMN2004LKQ-7 and PSMN017-20YL, PMN28UNEX balances low R_DS(on), fast switching, and compact TSOP6 packaging - making it optimal for space-limited, medium-current (<6 A), high-efficiency switching where gate drive simplicity and ESD robustness are prioritized.

Availability

PMN28UNEX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and synchronous rectifier circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PMN28UNEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The PMN28UNEX belongs to Nexperia's TrenchMOS family - engineered for low-voltage, high-efficiency switching in space-constrained applications where fast response, low gate drive, and robust ESD tolerance are essential.

FAQ

What is the maximum continuous drain current for PMN28UNEX at 100 °C ambient temperature?

The maximum continuous drain current is 3.5 A at T_amb = 100 °C with device mounted on an FR4 PCB (single-sided copper, 6 cm² drain pad). This derating reflects thermal limitations under sustained operation and must be verified against actual board layout and airflow conditions.

Does PMN28UNEX have a built-in body diode, and what is its forward voltage?

Yes, PMN28UNEX includes an integrated source-drain body diode with V_SD = 0.7–1.2 V at I_S = 1.3 A and T_j = 25 °C. This diode supports freewheeling in inductive loads and reverse-current protection in bidirectional power paths.

Can PMN28UNEX be used in a high-side switching configuration?

No - PMN28UNEX is optimized for low-side switching due to its N-channel structure and lack of integrated high-side gate driver or bootstrap circuitry. High-side use would require external level-shifting and careful gate bias management beyond its specified operating conditions.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMN28UNEX?

R_th(j-sp) is 15–20 K/W, measured from junction to solder point on the PCB. This value enables accurate thermal modeling when using thermal vias under the drain pads and informs heatsink or copper pour sizing for continuous 5 A operation.

PMN28UNEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 570mW (Ta), 6.25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN28UNEX FAQ

1.How can I place an order for PMN28UNEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN28UNEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN28UNEX reliable?

The price and inventory of PMN28UNEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN28UNEX is usually 5 days.

3.What payment methods are accepted for PMN28UNEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN28UNEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN28UNEX?

PMN28UNEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN28UNEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN28UNEX?

For technical support, including PMN28UNEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN28UNEX requirements.

6.How does Aetrix verify that PMN28UNEX is sourced from the original manufacturer or authorized distributors?

All PMN28UNEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN28UNEX meets industry standards.

7.What is the process for return or replacement of PMN28UNEX?

All PMN28UNEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN28UNEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN28UNEX part is unused and in its original packaging.

Return procedure for PMN28UNEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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