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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN30XPEX

Name: PMN30XPEX
Brand: Nexperia USA Inc.
SKU: PMN30XPEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN30XPEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN30XPEX.pdf

Description:: MOSFET P-CH 20V 5.3A 6TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:7,791

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Product details

Overview

PMN30XPE from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for -20 V drain-source voltage, 28 mΩ R_DS(on) at V_GS = -4.5 V and I_D = -5.3 A, with ESD protection >2 kV HBM and 1390 mW power dissipation capability. It serves as a high-side load switch or relay driver in compact DC-DC and power management circuits.

For engineers reviewing the PMN30XPE datasheet, PMN30XPE pinout, PMN30XPE application, or PMN30XPE equivalent, this device is selected for low-voltage P-channel switching where fast turn-on/turn-off (t_d(on) = 8 ns, t_f = 28 ns), thermal robustness on FR4 PCBs, and reliable gate drive compatibility with 3.3 V/5 V logic are critical.

Technical Context

This MOSFET uses Trench technology to achieve low R_DS(on) and high transconductance (g_fs = 13 S), enabling efficient conduction and sharp switching transitions. Its gate threshold voltage (V_GS(th) = -0.75 to -1.25 V) ensures strong turn-on with standard logic-level negative gate drive.

The device integrates a built-in body diode with V_SD = -0.7 to -1.2 V at I_S = -1.4 A and exhibits low capacitance (C_iss = 1465 pF, C_oss = 193 pF), supporting high-frequency switching up to several MHz in synchronous buck or load-switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage in high-side configuration without avalanche stress
R_DS(on)	28 mΩ (typ) at V_GS = -4.5 V, I_D = -5.3 A - Enables <150 mW conduction loss at 5 A DC load current
Q_G(tot)	11 nC (typ) - Supports fast switching with low gate-drive power demand from microcontroller GPIO
t_f	28 ns - Ensures clean signal edges in high-speed line driving and PWM-controlled loads
P_tot	1390 mW on FR4 PCB (6 cm² drain pad) - Allows direct mounting without heatsink in space-constrained 5 V systems
V_GS(th)	-1.0 V (typ) - Guarantees full enhancement with 3.3 V logic-compatible gate drive (\|V_GS\| > 3×\|V_GS(th)\|)
ESD HBM	>2 kV - Provides robust handling during board assembly and system integration without extra protection circuitry

Pinout & Package

Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 3.0 mm × 2.5 mm footprint, and exposed drain paddle for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; internally connected to exposed paddle for thermal conduction to PCB
3	Gate (G)	Control input requiring negative voltage relative to source to turn on; low C_iss enables fast edge rates
4	Source (S)	Reference node for gate drive; tied to system ground or positive rail depending on high-side vs. low-side topology

Key Features

Feature	Design Value
Fast switching	t_d(on) = 8 ns, t_f = 28 ns - Reduces transition losses in 500 kHz–1 MHz DC-DC converters
Trench MOSFET architecture	R_DS(on) = 28 mΩ @ -4.5 V - Delivers higher current density than planar P-channel devices in same footprint
Enhanced thermal dissipation	R_th(j-sp) = 15–20 K/W - Enables stable operation up to 150 °C junction temperature with minimal PCB copper area
ESD-hardened gate	HBM >2 kV - Eliminates need for external gate protection in automated assembly lines
Low gate charge	Q_G(tot) = 11 nC - Permits direct drive from low-power MCU pins without buffer stages

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules with 5 V logic control.

IC Role / Device Role / Timing Role: High-side switch controlling relay coil current path; operates in static on/off mode with occasional fast transitions.

Use Value: Low R_DS(on) minimizes coil voltage drop and self-heating; ESD hardening prevents field failure during connector hot-plug events.

Use Scenario: Transmitting TTL/CMOS signals across noisy factory-floor cables in motion control systems.

IC Role / Device Role / Timing Role: Active pull-up stage in open-drain bus interface, providing fast rise time and noise immunity.

Use Value: 28 ns fall time and low C_oss ensure signal integrity up to 10 Mbps; compact SOT457 fits dense routing near connectors.

High-Side Load Switch

Switching Power Supply

Use Scenario: Enabling/disabling 3.3 V or 5 V subsystems (e.g., sensors, radios) in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled high-side pass element with integrated reverse polarity protection via body diode orientation.

Use Value: V_GS(th) of -1.0 V ensures full turn-on with 3.3 V GPIO; low leakage (<1 µA) preserves battery life during sleep mode.

Use Scenario: Synchronous rectification in non-isolated buck converters for point-of-load regulation in telecom equipment.

IC Role / Device Role / Timing Role: Low-side switch complementing N-channel high-side FET in continuous conduction mode (CCM) operation.

Use Value: Q_G(tot) = 11 nC and g_fs = 13 S enable efficient 1 MHz switching with minimal gate drive loss and tight duty-cycle control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 45 mΩ @ -4.5 V; smaller SOT-563 package; no specified ESD rating	Higher conduction loss limits use to ≤3 A loads; smaller footprint trades thermal margin for density	Select when board area is constrained and peak current ≤3 A; verify ESD robustness in final layout
SI2301DS-T1-BE3	R_DS(on) = 115 mΩ @ -4.5 V; higher threshold (-1.2 V min); 750 mW P_tot	Lower power handling and higher on-resistance increase heat generation in 5 A applications	Acceptable only for low-duty-cycle or <2 A switching; not recommended for continuous 5 A load switching

Compared with DMG2305UVT-7 and SI2301DS-T1-BE3, PMN30XPE delivers superior thermal performance (1390 mW vs. ≤750 mW), lower R_DS(on), and documented ESD hardening-making it the preferred choice for high-reliability 5 A high-side switching in industrial and embedded power rails.

Availability

PMN30XPE is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, high-side load switches, and switching power supplies requiring stable component supply across production lifecycles.

Supply support for PMN30XPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PMN30XPE belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space-efficient, thermally robust DC power switching in consumer, industrial, and computing applications where logic-level gate drive and fast transient response are essential.

FAQ

What is the maximum continuous drain current for PMN30XPE at 100 °C ambient?

The maximum continuous drain current is -3.4 A at T_amb = 100 °C with V_GS = -4.5 V, per limiting values table. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures on standard FR4 PCBs.

Can PMN30XPE be driven directly by a 3.3 V microcontroller GPIO?

Yes-its typical V_GS(th) of -1.0 V and guaranteed -0.75 V minimum ensure full enhancement with 3.3 V logic applied between gate and source (i.e., V_GS = -3.3 V), delivering R_DS(on) within specification.

Is the body diode suitable for reverse-polarity protection?

Yes-the integrated source-drain diode has V_SD = -0.7 to -1.2 V at -1.4 A and supports reverse-current blocking when the device is placed in series with the positive supply rail, provided forward current stays within rated limits.

What is the recommended PCB layout for optimal thermal performance?

Use a 6 cm² tin-plated copper drain pad connected to internal ground or power planes via multiple thermal vias. The datasheet specifies this layout achieves R_th(j-a) = 78–90 K/W and enables full 1390 mW power dissipation at T_amb = 25 °C.

PMN30XPEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 5.3A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1465 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 560mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN30XPEX FAQ

1.How can I place an order for PMN30XPEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN30XPEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN30XPEX reliable?

The price and inventory of PMN30XPEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN30XPEX is usually 5 days.

3.What payment methods are accepted for PMN30XPEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN30XPEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN30XPEX?

PMN30XPEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN30XPEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN30XPEX?

For technical support, including PMN30XPEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN30XPEX requirements.

6.How does Aetrix verify that PMN30XPEX is sourced from the original manufacturer or authorized distributors?

All PMN30XPEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN30XPEX meets industry standards.

7.What is the process for return or replacement of PMN30XPEX?

All PMN30XPEX units undergo pre-shipment inspection (PSI). If there is an issue with PMN30XPEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN30XPEX part is unused and in its original packaging.

Return procedure for PMN30XPEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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