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NXP Semiconductors PMN34LN,135
- Part No.:
- PMN34LN,135
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN34LN,135.pdf
- Description:
- MOSFET N-CH 20V 5.7A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,487
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Product details
Overview
PMN34LN from Nexperia is an N-channel enhancement-mode TrenchMOS™ logic-level power MOSFET in SOT457 (TSOP6) package, rated for VDS = 20 V, continuous ID = 5.7 A at Tsp = 25 °C, RDS(on) ≤ 34 mΩ at VGS = 10 V and Tj = 25 °C, and Ptot = 1.75 W - designed for high-efficiency DC-to-DC primary-side switching in compact power converters.
For engineers reviewing the PMN34LN datasheet, PMN34LN pinout, PMN34LN application, or PMN34LN equivalent, this page delivers verified electrical parameters, thermal behavior, gate charge metrics (Qg(tot) = 13.1 nC), diode forward voltage (VSD = 0.8–1.2 V), and junction-to-solder-point thermal resistance (Rth(j-sp) = 70 K/W) to support layout-aware thermal design and synchronous rectifier selection.
Technical Context
The PMN34LN employs µTrenchMOS™ technology to achieve low on-resistance in a 6-lead surface-mount package, enabling high current density without compromising gate drive compatibility. Its logic-level gate threshold (VGS(th) = 1–2 V at Tj = 25 °C) ensures full enhancement with 3.3 V or 5 V microcontroller outputs.
Dynamic performance is characterized by fast switching: td(on) = 10 ns, tr = 14 ns, td(off) = 23 ns, tf = 12 ns, with Ciss = 500 pF and Qgd = 2.3 nC - supporting high-frequency operation up to several hundred kHz in buck and flyback topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum drain-source voltage - defines safe operating range for low-voltage DC-DC primary switches. |
| ID (DC) | 5.7 A at Tsp = 25 °C - sets continuous current capability under standard board-level thermal conditions. |
| RDS(on) | ≤34 mΩ at VGS = 10 V, Tj = 25 °C - determines conduction loss in high-current paths; rises to 54.4 mΩ at 150 °C. |
| Qg(tot) | 13.1 nC - quantifies total gate charge required for full turn-on; critical for gate driver sizing and switching loss estimation. |
| VGS(th) | 1–2 V at Tj = 25 °C - enables direct drive from 3.3 V logic without level-shifting circuitry. |
| VSD | 0.8–1.2 V at IS = 1.7 A - specifies forward voltage of integrated body diode for freewheeling or synchronous rectification analysis. |
| Rth(j-sp) | 70 K/W - defines thermal path resistance from junction to solder point; used to calculate temperature rise under PCB copper constraints. |
Pinout & Package
PMN34LN is housed in a plastic SOT457 (TSOP6) surface-mount package measuring 3.1 mm × 2.7 mm × 1.1 mm (L × W × H), with exposed drain pads on pins 1, 2, 5, and 6 for enhanced thermal and current handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (d) | Common high-current output node; electrically tied internally; provides primary thermal path to PCB copper. |
| 3 | Gate (g) | Control input; requires <15 V absolute max; threshold enables 3.3 V/5 V logic compatibility. |
| 4 | Source (s) | Reference node for gate drive and current sensing; connects to ground or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interface with 3.3 V microcontrollers and PWM controllers without external level shifters. |
| Low RDS(on) in TSOP6 | 34 mΩ at 10 V ensures <190 mW conduction loss at 5 A - critical for thermally constrained DC-DC modules. |
| Integrated source-drain diode | VSD = 0.8–1.2 V supports freewheeling in non-synchronous topologies and aids dead-time analysis in synchronous designs. |
| High peak current rating | IDM = 22.9 A (10 µs pulse) allows robust handling of inrush and transient overloads in power supply startup. |
| Thermal resistance optimization | Rth(j-sp) = 70 K/W enables accurate junction temperature prediction using measured solder point temperature instead of ambient. |
Applications
| DC-DC Buck Converter Primary Switch | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: High-efficiency 5 V–12 V input buck regulator delivering up to 5 A to FPGA core rails. IC Role / Device Role / Timing Role: Primary-side N-channel MOSFET switched at 500 kHz with synchronous rectification. Use Value: Low RDS(on) and fast switching minimize conduction + switching losses; logic-level gate simplifies gate driver IC selection. |
Use Scenario: In-line load switch controlling 5 V/3 A USB-C power path with overcurrent protection. IC Role / Device Role / Timing Role: Low-side power switch enabling hot-plug sequencing and reverse-current blocking. Use Value: VGS(th) margin ensures reliable turn-on across temperature; integrated body diode blocks reverse current during disconnect. |
| Automotive Body Control Module (BCM) Driver | Industrial Sensor Node Power Sequencer |
Use Scenario: Driving 12 V solenoid loads (e.g., door locks) in automotive BCM with PWM dimming control. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf = 12 ns) to suppress inductive kickback energy. Use Value: 20 V VDS rating accommodates automotive load-dump transients; 150 °C Tj rating supports under-hood operation. |
Use Scenario: Controlled power-up sequence for multi-rail sensor subsystems (e.g., 3.3 V analog + 1.8 V digital). IC Role / Device Role / Timing Role: Precision-controlled enable switch with minimal leakage (IDSS ≤ 1 µA at 25 °C). Use Value: Ultra-low gate leakage (IGSS ≤ 100 nA) prevents unintended turn-on in battery-powered sleep modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | RDS(on) = 26 mΩ @ 4.5 V (lower), but SOT23-6 package has higher Rth(j-sp) (~100 K/W); no drain paralleling. | Better conduction efficiency at low VGS, but less thermal headroom in high-power layouts. | Prefer when gate drive is limited to 4.5 V and board space is constrained; avoid if >3 A continuous current is needed. |
| SI2302DS-T1-GE3 | RDS(on) = 45 mΩ @ 4.5 V (higher); VDS = 20 V same; Qg(tot) = 5.5 nC (lower); SOT-23 package. | Faster switching due to lower gate charge, but higher conduction loss limits use to <2.5 A continuous. | Select for high-frequency, low-current switching where gate drive strength is limited; not suitable for PMN34LN's 5.7 A DC rating. |
Compared with DMN3026LSD-13 and SI2302DS-T1-GE3, the PMN34LN delivers optimal balance of low RDS(on), robust thermal performance via multi-drain-pin construction, and proven suitability for 5 A DC-DC primary-side duty - making it preferred for thermally demanding, medium-current power stages.
Availability
PMN34LN is available at Aetrix Electronics and suitable for DC-DC converter design, USB-C power delivery systems, and automotive body electronics requiring stable component supply and long-term industrial availability.
Supply support for PMN34LN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with deep expertise in automotive, industrial, and consumer power management.
The PMN34LN belongs to Nexperia's µTrenchMOS™ logic-level FET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load switching where low gate-threshold and low on-resistance are essential.
FAQ
What is the maximum continuous drain current for PMN34LN at 100 °C solder point temperature?
The PMN34LN supports a continuous drain current of 3.6 A at Tsp = 100 °C and VGS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the SOT457 package under elevated board temperatures and must be applied in thermal design calculations for sustained operation.
Does PMN34LN have a built-in body diode, and what is its forward voltage?
Yes, the PMN34LN includes an integrated source-drain body diode with a forward voltage (VSD) of 0.8–1.2 V at IS = 1.7 A and VGS = 0 V, per Table 4. This diode enables freewheeling in non-synchronous topologies and supports reverse-current blocking in load-switch applications.
Can PMN34LN be driven directly by a 3.3 V microcontroller GPIO?
Yes, the PMN34LN can be fully enhanced by a 3.3 V GPIO because its gate-source threshold voltage (VGS(th)) ranges from 1 V to 2 V at Tj = 25 °C, and RDS(on) remains low (≤40 mΩ) even at VGS = 4.5 V. This eliminates need for external level-shifting circuitry in most embedded control applications.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMN34LN?
The PMN34LN has a maximum junction-to-solder-point thermal resistance (Rth(j-sp)) of 70 K/W, as stated in Table 3. This parameter is measured under single-pulse conditions and is used to estimate junction temperature rise based on actual solder point temperature - a more accurate method than ambient-based calculations for surface-mount power devices.
Is PMN34LN suitable for automotive applications, and what is its junction temperature range?
Yes, the PMN34LN is qualified for automotive use with a guaranteed junction temperature range of −55 °C to +150 °C, matching AEC-Q101 stress test requirements. Its 20 V VDS rating and robust SOA support operation in body control modules and infotainment power supplies subject to load-dump transients.
PMN34LN,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.1 nC @ 10 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.75W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN34LN,135 FAQ
1.How can I place an order for PMN34LN,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN34LN,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN34LN,135 reliable?
The price and inventory of PMN34LN,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN34LN,135 is usually 5 days.
3.What payment methods are accepted for PMN34LN,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN34LN,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN34LN,135?
PMN34LN,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN34LN,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN34LN,135?
For technical support, including PMN34LN,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN34LN,135 requirements.
6.How does Aetrix verify that PMN34LN,135 is sourced from the original manufacturer or authorized distributors?
All PMN34LN,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN34LN,135 meets industry standards.
7.What is the process for return or replacement of PMN34LN,135?
All PMN34LN,135 units undergo pre-shipment inspection (PSI). If there is an issue with PMN34LN,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN34LN,135 part is unused and in its original packaging.
Return procedure for PMN34LN,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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