NXP Semiconductors PMN34UN,135

Overview

PMN34UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT457 (TSOP6) package, rated for 30 V V_DS, 4.9 A I_D at V_GS = 4.5 V, and 38 mΩ R_DS(on) at 2 A/25 °C. It serves as a low-voltage load switch or driver FET in battery-powered DC-DC converters and notebook power rails.

For engineers reviewing the PMN34UN datasheet, PMN34UN pinout, PMN34UN application, or PMN34UN equivalent, key selection criteria include its ultra-low threshold voltage (0.45–0.7 V), fast switching (10 ns t_d(on), 12 ns t_r), 1.75 W P_tot at T_sp = 25 °C, and compatibility with 1.8 V logic-level drive in space-constrained portable systems.

Technical Context

This discrete MOSFET uses µTrenchMOS™ technology to achieve low R_DS(on) at gate voltages as low as 1.8 V, enabling direct interface with modern low-power microcontrollers and PMICs. Its 6-pin TSOP6 package integrates four parallel drain terminals (pins 1,2,5,6) for reduced thermal resistance and higher current capability.

The device features a source-drain diode with 1.45 A continuous forward current and 0.73 V typical V_SD at 1.7 A, supporting synchronous rectification and reverse-current blocking in buck converters. Thermal resistance from junction to solder point is 70 K/W, optimized for PCB copper pour cooling in high-density layouts.

Key Specifications

Pinout & Package

SOT457 (TSOP6) is a 6-lead plastic surface-mount package with exposed drain pads on four pins (1,2,5,6) for enhanced thermal and current handling. Package dimensions: 3.1 × 2.7 × 1.1 mm (L × W × H), pitch 0.95 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LK-7 and PSMN1R0-30YLC, the PMN34UN uniquely balances 30 V rating, 1.8 V logic compatibility, 4.9 A capability, and compact SOT457 footprint-making it optimal for space- and voltage-constrained portable power switches where gate drive simplicity and thermal efficiency are prioritized.

Availability

PMN34UN is available at Aetrix Electronics and suitable for battery-powered motor control, notebook load switching, set-top box power supplies, and DC-to-DC converter driver applications requiring stable component supply and long-term industrial availability.

Supply support for PMN34UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, consumer, and wearable markets.

The PMN34UN belongs to Nexperia's µTrenchMOS™ logic-level PowerMOS family, engineered for high-efficiency, low-voltage switching in portable and space-constrained power management systems.

FAQ

What is the maximum continuous drain current for PMN34UN at 70 °C solder point temperature?

The PMN34UN supports 3.9 A continuous drain current at T_sp = 70 °C and V_GS = 4.5 V, as specified in the limiting values table. This derating reflects thermal constraints of the SOT457 package under real-world PCB cooling conditions-not ambient temperature. The PMN34UN must be mounted on adequate copper area to maintain solder point temperature within limits for reliable operation.

Does PMN34UN support 1.8 V logic-level gate drive, and what is its R_DS(on) under that condition?

Yes, the PMN34UN is fully characterized for 1.8 V gate drive: R_DS(on) is 54–77 mΩ at I_D = 1.5 A and T_j = 25 °C. Its 0.45–0.7 V gate threshold ensures strong enhancement even with marginal 1.8 V supplies, making the PMN34UN suitable for direct interface with low-voltage microcontrollers and PMICs without level shifters.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMN34UN, and how does it impact layout design?

The PMN34UN has a maximum R_th(j-sp) of 70 K/W, measured from die junction to PCB solder point. This value assumes proper PCB copper land design per the SOT457 outline-specifically, thermal vias under the drain pads and ≥100 mm² of 2-oz copper. Layouts ignoring this thermal path will exceed T_j = 150 °C at rated current, so the PMN34UN requires explicit thermal pad routing in CAD footprints.

Can PMN34UN be used as a synchronous rectifier, and what diode parameters support that function?

Yes, the PMN34UN integrates a source-drain body diode rated for 1.45 A continuous forward current (I_S) and 0.73 V typical forward voltage (V_SD) at 1.7 A and T_j = 25 °C. Its low V_SD and fast recovery (inherent to TrenchMOS™ structure) make the PMN34UN suitable for synchronous rectification in buck and flyback converters up to ~500 kHz, reducing conduction loss versus Schottky alternatives.

What are the absolute maximum ratings for gate-source voltage (V_GS) on PMN34UN, and why is this important for ESD-safe handling?

The PMN34UN has an absolute maximum V_GS rating of ±8 V. Exceeding this-even transiently during ESD events-can permanently damage the gate oxide. Because the device features ultra-low V_GS(th), it is especially sensitive to overvoltage; thus, handling requires strict adherence to Class 1B ESD controls (≤250 V), and gate traces in PCB layout must avoid coupling noise or inductive spikes. This specification directly defines safe operating margins for the PMN34UN in automated assembly and field operation.