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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMN34UP,115

Name: PMN34UP,115
Brand: Nexperia USA Inc.
SKU: PMN34UP,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMN34UP,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: PMN34UP,115.pdf

Description:: MOSFET P-CH 20V 5A 6TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMN34UP,115 from NXP Semiconductors is a P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for −20 V V_DS, −5 A I_D at 25 °C, and 34 mΩ R_DS(on) at V_GS = −4.5 V and I_D = −2.4 A. It serves as a high-side load switch or relay driver in compact DC power control circuits.

For engineers reviewing the PMN34UP,115 datasheet, PMN34UP,115 pinout, PMN34UP,115 application, or PMN34UP,115 equivalent, this device is selected for low-voltage logic-level gate drive compatibility, fast switching performance (t_d(on) = 13 ns, t_f = 33 ns), and thermal robustness in space-constrained PCB layouts with 6 cm² drain pad.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching transients. Its gate threshold voltage (V_GS(th)) ranges from −0.45 V to −0.95 V, enabling reliable turn-on with 1.8 V logic-compatible drive, and its R_DS(on) remains stable up to 150 °C junction temperature (48–55 mΩ).

The device features a multi-drain-pin configuration (Pins 1, 2, 5, 6 all connected to drain) for enhanced current handling and thermal spreading. Its source-drain diode exhibits V_SD = −0.75 to −1.0 V at I_S = −2.4 A, supporting bidirectional conduction in certain switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage in high-side switch configurations without avalanche stress.
I_D (T_amb = 25 °C)	−5 A - Continuous drain current rating under standard FR4 PCB mounting with 6 cm² drain pad.
R_DS(on)	34 mΩ typ. @ V_GS = −4.5 V, I_D = −2.4 A - Enables <100 mW conduction loss at 2.4 A, critical for thermally constrained loads.
V_GS(th)	−0.7 V typ. - Ensures full enhancement with 1.8 V logic outputs, reducing external level-shifter need.
t_f / t_r	33 ns / 21 ns - Supports >1 MHz switching in PWM-based load control with minimal dead-time overhead.
Q_G(tot)	15.5 nC typ. - Low gate charge enables efficient driving from microcontroller GPIOs without dedicated gate drivers.
R_th(j-a)	78 K/W @ 6 cm² drain pad - Allows ~1.3 W continuous dissipation at 25 °C ambient before reaching 150 °C T_j.

Pinout & Package

Package: SOT457 (TSOP6), plastic surface-mounted, 6-lead, 1.1 mm × 2.7 mm footprint with exposed drain thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1 D	Drain	Primary high-side current path; internally tied to pins 2, 5, 6 for parallel conduction and thermal relief.
2 D	Drain	Secondary drain connection; reduces trace inductance and improves thermal coupling to PCB copper.
3 G	Gate	Control terminal; accepts −8 V to +8 V; threshold centered at −0.7 V for 1.8 V logic compatibility.
4 S	Source	Reference node for gate drive; connects to system ground or positive rail depending on high-side topology.
5 D	Drain	Third drain terminal; enhances current sharing and lowers effective package resistance.
6 D	Drain	Fourth drain terminal; maximizes solder joint reliability and heat extraction via multiple PCB vias.

Key Features

Feature	Design Value
1.8 V logic-compatible gate drive	Enables direct interface with low-voltage MCUs (e.g., ARM Cortex-M0+) without level shifters.
Multi-drain pin configuration	Reduces effective package resistance by ~30% and improves thermal transfer to PCB copper.
Low Q_G(tot) (15.5 nC)	Minimizes gate drive power and allows use of small-value gate resistors for optimized EMI vs. speed trade-off.
Fast switching (t_d(off) = 95 ns)	Supports high-frequency PWM dimming and digital power sequencing with sub-100 ns timing margins.
−55 °C to +150 °C operating range	Validated for industrial ambient environments including automotive under-hood auxiliary circuits.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in PLC I/O modules to eliminate contact wear and bounce.

IC Role / Device Role / Timing Role: High-side switch controlling 12 V/24 V coil current with fast turn-off to suppress back-EMF spikes.

Use Value: 95 ns t_d(off) and integrated body diode enable snubberless operation and reduce BOM count by 3 components.

Use Scenario: Driving terminated RS-485 or CAN bus stubs in industrial fieldbus nodes.

IC Role / Device Role / Timing Role: Active termination switch enabling dynamic bias control and hot-swap capability.

Use Value: 34 mΩ R_DS(on) ensures <50 mV voltage drop at 1.5 A termination current, preserving signal integrity.

High-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 3.3 V or 5 V subsystem rails in battery-powered IoT sensors.

IC Role / Device Role / Timing Role: Controlled power path with reverse-current blocking and inrush limiting.

Use Value: −0.7 V V_GS(th) guarantees turn-on with 1.8 V GPIO, eliminating need for external bias circuitry.

Use Scenario: Secondary-side synchronous rectification in isolated DC-DC converters (e.g., flyback, forward).

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes in 12 V output stages.

Use Value: 34 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V/3 A Schottky, improving efficiency by 1.2% at 2 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305U-7	R_DS(on) = 48 mΩ @ V_GS = −4.5 V; SOT-23 package; lower I_D rating (−4.2 A)	Limited to <2 A continuous due to smaller thermal mass; unsuitable for 5 A load-switch duty.	Select only when board space is primary constraint and peak current ≤3 A.
SI2305DS-T1-GE3	R_DS(on) = 55 mΩ @ V_GS = −4.5 V; higher V_GS(th) (−1.0 to −2.5 V); SOT-23	Requires ≥2.5 V gate drive; not compatible with 1.8 V logic; slower switching (t_f ≈ 50 ns).	Choose only if existing design uses 3.3 V GPIO and thermal budget permits higher R_DS(on).

Compared with DMG2305U-7 and SI2305DS-T1-GE3, PMN34UP,115 delivers superior thermal performance (78 K/W vs. >200 K/W), lower on-resistance, and guaranteed 1.8 V logic compatibility-making it optimal for high-reliability, high-current, space-constrained high-side switching.

Availability

PMN34UP,115 is available at Aetrix Electronics and suitable for industrial PLC I/O modules, battery-powered sensor nodes, RS-485 line drivers, and isolated DC-DC converter secondary-side rectification requiring stable component supply across production lifecycles.

Supply support for PMN34UP,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PMN34UP belongs to NXP's TrenchMOS portfolio, designed specifically for high-efficiency, low-voltage power switching in space-constrained embedded systems where logic-level gate drive and thermal performance are critical.

FAQ

What is the maximum continuous drain current for PMN34UP,115 at 100 °C ambient?

At T_amb = 100 °C with standard FR4 PCB mounting (6 cm² drain pad), the maximum continuous drain current is −3.1 A, as specified in Table 5 (Limiting Values). This derating reflects thermal limits-not electrical failure-and assumes proper PCB copper area and airflow.

Can PMN34UP,115 be used in avalanche energy applications?

No-PMN34UP,115 is not rated for repetitive or single-pulse avalanche operation. Its Absolute Maximum Ratings specify only V_DS = −20 V with no avalanche energy (E_AS) parameter provided. Operation beyond V_DS rating risks immediate parametric shift or catastrophic failure.

Is the source-drain diode suitable for freewheeling in inductive loads?

Yes-the integrated body diode has V_SD = −0.75 to −1.0 V at I_S = −2.4 A and T_j = 25 °C, with 1.5 A continuous source current rating. It supports freewheeling in low-duty-cycle inductive switching but lacks soft-recovery characteristics for high-frequency ZVS designs.

Does PMN34UP,115 require a gate resistor for stability?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance (C_rss = 105 pF). While not mandatory for basic DC switching, it prevents false turn-on during fast dV/dt events and improves EMI performance in motor or relay drive applications.

PMN34UP,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 540mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PMN34UP,115 FAQ

1.How can I place an order for PMN34UP,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMN34UP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMN34UP,115 reliable?

The price and inventory of PMN34UP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN34UP,115 is usually 5 days.

3.What payment methods are accepted for PMN34UP,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN34UP,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMN34UP,115?

PMN34UP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMN34UP,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMN34UP,115?

For technical support, including PMN34UP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN34UP,115 requirements.

6.How does Aetrix verify that PMN34UP,115 is sourced from the original manufacturer or authorized distributors?

All PMN34UP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN34UP,115 meets industry standards.

7.What is the process for return or replacement of PMN34UP,115?

All PMN34UP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN34UP,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMN34UP,115 part is unused and in its original packaging.

Return procedure for PMN34UP,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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