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NXP Semiconductors PMN35EN,115
- Part No.:
- PMN35EN,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN35EN,115.pdf
- Description:
- MOSFET N-CH 30V 5.1A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,106
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Product details
Overview
PMN35EN from Nexperia is a 30 V, 5.1 A N-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, optimized for low-side load switching and high-speed line driving. It features logic-level gate drive compatibility (VGS(th) = 1.5 V typ), RDS(on) = 25 mΩ at VGS = 10 V, and fast switching with td(on) = 4 ns and tf = 24 ns - enabling efficient operation in compact DC-DC and interface circuits.
For engineers reviewing the PMN35EN datasheet, PMN35EN pinout, PMN35EN application, or PMN35EN equivalent, this page delivers verified electrical parameters, thermal behavior under FR4 PCB mounting, junction-to-ambient thermal resistance (85 K/W with 6 cm² drain pad), and real-world use cases including relay drivers and low-side power switches where sub-30 V, <6 A switching with minimal gate charge (QG(tot) = 6.2 nC typ) is required.
Technical Context
This N-channel MOSFET uses Trench MOSFET technology to achieve low RDS(on) and high transconductance (gfs = 14 S typ), supporting stable conduction at gate voltages as low as 4.5 V. Its 6-pin SOT457 package integrates four drain terminals (pins 1, 2, 5, 6) for enhanced current handling and thermal dissipation.
The device operates within –55 °C to 150 °C junction temperature range, with absolute maximum VDS = 30 V and VGS = ±20 V. Dynamic characteristics include Ciss = 334 pF and QGD = 1 nC, indicating suitability for high-frequency switching up to several MHz in non-isolated topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe blocking voltage in low-voltage DC systems like 24 V industrial controls or USB-PD auxiliary rails. |
| RDS(on) | 25 mΩ typical at VGS = 10 V - enables ≤130 mW conduction loss at 5.1 A, critical for thermally constrained PCB layouts. |
| QG(tot) | 6.2 nC typical - reduces gate driver power demand and supports >1 MHz PWM in compact power stages. |
| tf | 24 ns typical - minimizes switching transition time, lowering dynamic losses in high-frequency load switching. |
| VGS(th) | 1.5 V typical - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO without level-shifting circuitry. |
| ID | 5.1 A continuous at Tamb = 25 °C - supports sustained current in fan drivers, LED arrays, and solenoid interfaces. |
| Ciss | 334 pF typical - influences gate drive impedance matching and EMI filtering requirements in layout design. |
Pinout & Package
SOT457 (TSOP6) plastic surface-mounted package with 6 leads; 2.7 mm × 3.1 mm footprint, 1.1 mm max height, and four parallel drain terminals for low-inductance, high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary current-carrying terminal; electrically tied to pins 2, 5, and 6 for distributed thermal and current paths. |
| 2 | Drain | Secondary drain connection; shares same node as pin 1, reducing effective package inductance and RDS(on). |
| 3 | Gate | Control input; requires ≤100 nA leakage current at ±20 V, enabling direct MCU interfacing with minimal pull-up/down loading. |
| 4 | Source | Reference node for gate drive and current sensing; common return path for load current in low-side configurations. |
| 5 | Drain | Third drain terminal; enhances thermal spreading across PCB copper when used with 6 cm² mounting pad per datasheet condition [2]. |
| 6 | Drain | Fourth drain terminal; improves current sharing uniformity and reduces localized heating during pulsed operation. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 3.3 V or 5 V logic signals - eliminates need for external gate drivers in microcontroller-based switch designs. |
| Trench MOSFET architecture | Delivers 25 mΩ RDS(on) in ultra-small SOT457 - achieves higher current density than planar MOSFETs of comparable size. |
| Four-drain-terminal configuration | Reduces effective package resistance and inductance - improves thermal transfer to PCB and supports 24 A peak pulse current (IDM). |
| Low QGD/QG ratio | QGD = 1 nC / QG(tot) ≈ 16% - suppresses Miller-induced shoot-through risk in half-bridge or synchronous rectifier applications. |
| 150 °C max junction temperature | Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood auxiliary modules) without derating below 100 °C ambient. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving electromagnetic relays in programmable logic controllers (PLCs) with 24 V DC coils requiring 50–100 mA hold current and 200–500 mA pull-in surge. IC Role / Device Role / Timing Role: Low-side switch controlling coil ground path; handles repetitive 10 ms on/off cycles with minimal self-heating. Use Value: 25 mΩ RDS(on) limits coil-switching loss to <130 mW at 5.1 A, while 4.5 V logic compatibility allows direct STM32 GPIO control without buffer stages. |
Use Scenario: Transmitting TTL/CMOS-level digital signals across 50 Ω coaxial or twisted-pair lines in test equipment and industrial data links. IC Role / Device Role / Timing Role: Active termination and signal amplification stage; toggles between high-Z and low-Z states at >10 MHz rates. Use Value: 24 ns fall time and 334 pF Ciss support clean edge integrity up to 20 Mbps, with gate charge low enough for FPGA I/O pin direct drive. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling 12 V or 24 V power rails to sensors, displays, or peripheral modules in battery-powered IoT gateways. IC Role / Device Role / Timing Role: Controlled power path switch; activated by system MCU to minimize standby current leakage. Use Value: 1 µA IDSS at 25 °C and 10 µA at 150 °C ensure <10 µA off-state rail leakage - extending battery life in always-on monitoring nodes. |
Use Scenario: Replacing Schottky diodes in 5–12 V output synchronous buck converters for portable medical devices and telecom power modules. IC Role / Device Role / Timing Role: Secondary-side rectifying switch synchronized to primary FET gate signal via dedicated controller. Use Value: 25 mΩ RDS(on) cuts conduction loss by >60% vs. 0.4 V Schottky, improving efficiency by 1.2% at 3 A load while maintaining 150 °C thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30 V, 5.8 A, RDS(on) = 22 mΩ @ 10 V, SO-8 package (larger footprint, dual FET) | SO-8 offers higher power dissipation but requires more PCB area; dual configuration supports complementary switching. | Select when board space permits larger package and dual-FET topology is needed for H-bridge or dual-load control. |
| AO3400 | 30 V, 5.7 A, RDS(on) = 28 mΩ @ 10 V, SOT-23-3 package (3-pin, single drain) | SOT-23-3 lacks multi-drain thermal advantage; lower peak current rating (IDM = 20 A vs. 24 A) and higher RDS(on). | Choose only for cost-sensitive, low-power (<3 A) applications where thermal performance is secondary to BOM simplicity. |
Compared with DMN3026LSD-13 and AO3400, PMN35EN uniquely balances ultra-compact SOT457 size, four-drain thermal robustness, and 25 mΩ conduction loss - making it optimal for space-constrained, medium-current switching where PCB copper area for heat spreading is limited.
Availability
PMN35EN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply in industrial automation, test instrumentation, and embedded power management.
Supply support for PMN35EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.
The PMN35EN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, low-voltage switching in space-constrained applications where logic-level drive and fast transient response are essential.
FAQ
What is the maximum continuous drain current for PMN35EN at 100 °C ambient temperature?
The PMN35EN supports 3.2 A continuous drain current at Tamb = 100 °C with VGS = 10 V, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the SOT457 package on standard FR4 PCB; using a 6 cm² drain pad improves thermal resistance to 85 K/W, allowing higher sustained current in controlled layouts. The PMN35EN datasheet confirms this value under "ID" parameter with Tamb = 100 °C condition.
Does PMN35EN have avalanche capability rated in the datasheet?
No, the PMN35EN datasheet does not specify rated unclamped inductive switching (UIS) or avalanche energy (EAS). It is characterized only for linear operating conditions and safe operating area (SOA) under resistive and pulse loads. For inductive load switching, external protection (e.g., flyback diode or RC snubber) is required. The PMN35EN product data sheet explicitly omits avalanche ratings in Sections 5 (Limiting values) and 7 (Characteristics).
Can PMN35EN be used with 3.3 V microcontroller GPIO without a gate driver?
Yes, PMN35EN has a typical VGS(th) of 1.5 V and guaranteed turn-on at VGS ≥ 2.5 V, making it compatible with 3.3 V logic. At VGS = 4.5 V, RDS(on) is 32 mΩ (typ), delivering ~4.3 A continuous current - sufficient for most low-side switching tasks. The PMN35EN datasheet confirms this in Table 7 (Characteristics) under "RDSon" with VGS = 4.5 V condition.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMN35EN?
The PMN35EN has a typical Rth(j-sp) of 20 K/W and maximum of 30 K/W, as stated in Table 6 (Thermal characteristics). This parameter measures heat flow from die to PCB solder joint and is critical for estimating local temperature rise near the device footprint. The PMN35EN specification applies to FR4 PCB with standard footprint, independent of drain pad size.
Is PMN35EN suitable for automotive applications?
The PMN35EN is not automotive-qualified per its datasheet (Section 12.4: Non-automotive qualified products). It lacks AEC-Q101 stress testing and is intended for industrial, computing, and consumer use. While it operates from –55 °C to 150 °C, automotive deployment requires formal qualification - the PMN35EN documentation explicitly states it is "not suitable for automotive use" unless customer assumes full liability and performs independent validation.
PMN35EN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 334 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN35EN,115 FAQ
1.How can I place an order for PMN35EN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN35EN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN35EN,115 reliable?
The price and inventory of PMN35EN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN35EN,115 is usually 5 days.
3.What payment methods are accepted for PMN35EN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN35EN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN35EN,115?
PMN35EN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN35EN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN35EN,115?
For technical support, including PMN35EN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN35EN,115 requirements.
6.How does Aetrix verify that PMN35EN,115 is sourced from the original manufacturer or authorized distributors?
All PMN35EN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN35EN,115 meets industry standards.
7.What is the process for return or replacement of PMN35EN,115?
All PMN35EN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMN35EN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN35EN,115 part is unused and in its original packaging.
Return procedure for PMN35EN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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