NXP Semiconductors PMN38EN,135

Overview

PMN38EN from Nexperia is a logic-level N-channel TrenchMOS FET in TSOP6 (SOT457) package, designed for low-voltage switching with V_GS(th) = 1–2 V (typ), R_DS(on) = 38 mΩ @ V_GS = 4.5 V / I_D = 2.8 A, and V_DS = 30 V max. It serves as a load switch in notebook computers and driver FET in DC-to-DC converters.

For engineers reviewing the PMN38EN datasheet, PMN38EN pinout, PMN38EN application, or PMN38EN equivalent, this page delivers verified electrical specs, thermal behavior, gate charge metrics (Q_G(tot) = 6.1 nC), safe operating area limits, and real-world use context for battery-powered and high-speed power switching designs.

Technical Context

The PMN38EN employs TrenchMOS technology to achieve low threshold voltage and fast switching (t_d(on) = 14 ns, t_f = 16 ns), enabling efficient operation from 3.3 V and 5 V logic rails. Its four-drain-pin configuration (Pins 1,2,5,6) supports high-current conduction while minimizing PCB trace resistance.

Thermal design is enabled by R_th(j-sp) = 70 K/W (junction-to-solder-point) on metal-clad board, and its SOA curve confirms continuous I_D = 5.4 A at T_sp = 25 °C with pulse capability up to I_DM = 21.6 A (10 μs).

Key Specifications

Pinout & Package

Package: TSOP6 (SOT457), plastic surface-mounted, 6-lead, 1.3 mm × 3.0 mm footprint with exposed drain pad for thermal and current handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, the PMN38EN delivers balanced performance: higher current rating (5.4 A) and superior thermal capability (1.75 W, R_th(j-sp) = 70 K/W) than either alternative, making it optimal for mid-power portable and industrial switching where reliability under sustained load matters.

Availability

PMN38EN is available at Aetrix Electronics and suitable for battery-powered motor control, DC-to-DC converter driver stages, and notebook computer load switching requiring stable component supply across production lifecycles.

Supply support for PMN38EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The PMN38EN belongs to Nexperia's TrenchMOS logic-level FET product line, engineered for high-efficiency, low-voltage switching in space-constrained portable and power-management applications.

FAQ

What is the maximum continuous drain current for PMN38EN at 25 °C solder point temperature?

The PMN38EN supports a maximum continuous drain current of 5.4 A at T_sp = 25 °C with V_GS = 10 V, as specified in Table 4 (Limiting values). Derating applies above 25 °C per Figure 1 - at T_sp = 100 °C, I_D drops to 3.4 A. This rating assumes proper PCB copper area for thermal conduction, consistent with the 70 K/W junction-to-solder-point thermal resistance.

Does PMN38EN have a body diode, and what are its key characteristics?

Yes, the PMN38EN integrates a source-drain body diode with V_SD = 0.75–1.2 V at I_S = 1.7 A and T_j = 25 °C, and reverse recovery time t_rr = 22 ns under I_S = 2.3 A, dI_S/dt = 100 A/μs conditions. This fast, low-V_F diode supports synchronous rectification and flyback energy recirculation in DC/DC topologies without external Schottky supplementation.

Can PMN38EN be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes, the PMN38EN is explicitly designed as a logic-level FET with V_GS(th) = 1.0–2.0 V and full enhancement at V_GS = 4.5 V. At 3.3 V, it delivers R_DS(on) ≈ 45–55 mΩ (interpolated from Figure 8), sufficient for ≤2 A loads. For lowest conduction loss, 4.5 V or 5 V drive is preferred - but direct 3.3 V MCU drive is functional and widely implemented in notebook and set-top box designs using the PMN38EN.

What is the gate charge profile of PMN38EN, and how does it impact PWM efficiency?

The PMN38EN has Q_G(tot) = 6.1 nC, Q_GS = 1.7 nC, and Q_GD = 2.35 nC at V_DS = 15 V, V_GS = 4.5 V, and T_j = 25 °C. This low total gate charge reduces driver power dissipation and enables clean, fast transitions - critical for maintaining high efficiency in 500 kHz–2 MHz DC/DC converters. The relatively low Q_GD/Q_GS ratio also improves Miller immunity during hard-switching.

Is PMN38EN qualified for automotive applications?

No, the PMN38EN is explicitly qualified only for computing, communications, consumer, and industrial applications per Section 1.1 of its datasheet. It does not meet AEC-Q101 requirements, lacks automotive-grade process controls, and has no extended temperature qualification beyond T_j = –55 to +150 °C. For automotive use, Nexperia offers AEC-Q101-qualified alternatives such as the PSMN2R0-30YLH, not the PMN38EN.