NXP Semiconductors PMN40LN,135

Overview

PMN40LN from Nexperia is an N-channel logic-level TrenchMOS™ power MOSFET in SOT457 (TSOP6) package, rated for 30 V V_DS, 5.4 A I_D (DC at T_sp = 25 °C), and 32 mΩ R_DS(on) at V_GS = 10 V / I_D = 2.5 A / T_j = 25 °C. It serves as a high-efficiency, surface-mount load switch in battery management and low-power DC-DC converters.

For engineers reviewing the PMN40LN datasheet, PMN40LN pinout, PMN40LN application, or PMN40LN equivalent, this page delivers verified electrical parameters, thermal behavior, gate charge characteristics, and real-world use context - all aligned to the original Philips/Nexperia product data Rev. 01 (13 November 2002).

Technical Context

This device employs TrenchMOS™ technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1–2 V typ at 25 °C). Its 6-pin TSOP6 package integrates four parallel drain terminals (pins 1,2,5,6) for reduced package inductance and enhanced current handling.

The PMN40LN features a source-drain diode with 1.45 A continuous forward current rating and 0.8–1.2 V forward voltage at I_S = 1.7 A. Dynamic parameters include 13.8 nC total gate charge and 7 ns rise time under standard switching conditions (V_DD = 15 V, R_G = 6 Ω).

Key Specifications

Pinout & Package

SOT457 (TSOP6) is a 6-pin, surface-mount plastic package with exposed drain pad for thermal performance. Pin 1–2–5–6 are internally connected to the drain; pin 3 is gate; pin 4 is source. The package footprint measures 3.1 mm × 2.7 mm × 1.1 mm (L × W × H) with 0.95 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, the PMN40LN offers balanced performance across 3.3 V–5 V drive, 24 V system compatibility, and 5.4 A capability in a thermally robust TSOP6 package - making it optimal for mid-power battery and DC-DC applications where reliability and layout simplicity matter.

Availability

PMN40LN is available at Aetrix Electronics and suitable for battery management, portable load switching, and low-power DC-DC converter designs requiring stable component supply, long-term lifecycle support, and consistent parametric performance.

Supply support for PMN40LN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business. It focuses on automotive, industrial, computing, consumer, and wearable markets.

The PMN40LN belongs to Nexperia's TrenchMOS™ logic-level FET product line, engineered for high-efficiency, low-voltage switching in space- and power-sensitive applications such as portable electronics and battery-powered systems.

FAQ

What is the maximum continuous drain current for PMN40LN at 70 °C solder point temperature?

The PMN40LN supports 4 A continuous drain current at T_sp = 70 °C with V_GS = 10 V, as specified in Table 3 (Limiting values). This derating reflects thermal constraints of the SOT457 package and must be respected to maintain junction temperature below 150 °C. Designers should verify PCB copper area and airflow to sustain this current in real-world layouts. The PMN40LN datasheet provides normalized derating curves in Figure 2.

Does PMN40LN have integrated ESD protection on the gate terminal?

The PMN40LN does not include integrated gate ESD protection diodes. Its gate-source leakage current is specified at 10–100 nA (Table 5), and the absolute maximum V_GS is ±15 V - indicating susceptibility to ESD damage. Designers must implement external protection (e.g., 10 kΩ series resistor + 5.6 V Zener clamp to source) when handling or routing the PMN40LN in automated assembly or field-replaceable modules.

Can PMN40LN be used as a high-side switch with 3.3 V logic control?

Yes - the PMN40LN has a typical gate threshold voltage of 1.5 V and guaranteed turn-on at V_GS = 3.3 V, delivering ≤45 mΩ R_DS(on) at I_D = 2 A (Table 5). For high-side use, a floating gate driver or charge pump is required to bias the gate above the drain rail. The PMN40LN's 30 V V_DS rating supports high-side operation in ≤24 V systems when properly driven.

What is the safe operating area (SOA) limitation for PMN40LN at 100 µs pulse width?

Per Figure 3 (Safe operating area), the PMN40LN supports up to ~6 A continuous drain current at V_DS = 10 V for 100 µs pulses, bounded by the R_DS(on) limit line. At higher voltages (e.g., V_DS = 20 V), the SOA restricts I_D to ~3 A for the same pulse width. These boundaries assume T_j ≤150 °C and proper PCB thermal design - exceeding them risks thermal runaway or bond-wire failure. The PMN40LN SOA curve is defined in the original Philips data sheet Rev. 01.

How does the source-drain diode forward voltage of PMN40LN affect synchronous rectifier efficiency?

The PMN40LN's source-drain diode exhibits V_SD = 0.8–1.2 V at I_S = 1.7 A (Table 5), which directly impacts conduction loss during dead-time intervals in synchronous buck converters. Compared to an external Schottky (e.g., 0.4 V), this adds ~0.5 W loss at 1.7 A - justifying its use only in low-duty, low-current freewheeling roles or where PCB area savings outweigh efficiency trade-offs. The PMN40LN's diode is integral and non-bypassable.