Nexperia USA Inc. PMN40SNAH

Overview

PMN40SNAH from Nexperia is a 60 V, 4.7 A N-channel Trench MOSFET in SOT457 (SC-74/TSOP6) package, optimized for low-side load switching and high-speed line driving with 29 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, AEC-Q101 qualified for automotive use, and rated for 175 °C junction operation.

For engineers reviewing the PMN40SNAH datasheet, PMN40SNAH pinout, PMN40SNAH application, or PMN40SNAH equivalent, this device supports fast-switching power control in space-constrained automotive and industrial PCBs where thermal robustness, gate charge efficiency (Q_G(tot) = 9–14 nC), and avalanche ruggedness (30 mJ) are critical selection criteria.

Technical Context

This N-channel enhancement-mode MOSFET uses Trench technology to achieve low on-resistance and fast switching (t_d(on) = 6 ns, t_f = 5 ns) while maintaining stable threshold voltage (V_GS(th) = 2.4–4.0 V) across -55 °C to +175 °C operating range. Its integrated source-drain diode enables bidirectional current handling in relay driver configurations.

The device features six-terminal SOT457 package with four drain pins (1,2,5,6), one gate (3), and one source (4), enabling high-current routing and improved thermal dissipation via large drain pad (6 cm²). Thermal resistance R_th(j-a) is 200–230 K/W on standard FR4, dropping to 15–20 K/W to solder point.

Key Specifications

Pinout & Package

SOT457 (SC-74/TSOP6) surface-mount plastic package with 6 leads, 3.1 mm × 1.7 mm footprint, 1.1 mm height, and exposed drain pad for thermal management. Mounting requires 6 cm² copper area on FR4 PCB for rated power dissipation.

Key Features

Applications

Availability

PMN40SNAH is available at Aetrix Electronics and suitable for automotive relay drivers, industrial line drivers, low-side load switches, and DC motor control stages requiring stable component supply with AEC-Q101 compliance and extended temperature operation.

Supply support for PMN40SNAH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The PMN40SNAH belongs to Nexperia's TrenchMOS® portfolio designed specifically for space-constrained, thermally demanding automotive and industrial switching applications requiring fast response, low R_DS(on), and robust transient handling.

FAQ

Is PMN40SNAH compatible with 3.3 V microcontroller GPIOs?

Yes. With a gate threshold voltage of 2.4–4.0 V and guaranteed turn-on at V_GS = 4.5 V, PMN40SNAH achieves full enhancement using standard 3.3 V logic outputs when operated within its safe operating area. For optimal R_DS(on), a 5 V gate drive is recommended.

What is the maximum continuous drain current at 100 °C ambient?

The datasheet specifies 3 A continuous drain current at T_amb = 100 °C with standard FR4 mounting. This reflects thermal derating due to R_th(j-a) ≈ 215 K/W; actual current depends on PCB copper area and airflow-use Fig. 2 for precise normalization.

Does PMN40SNAH include an integrated body diode?

Yes. It features a monolithic source-drain diode with V_SD = 0.8–1.2 V at I_S = 1.7 A and reverse recovery time t_rr = 12 ns, enabling freewheeling in inductive switching applications without external diodes.

How does the SOT457 package affect thermal performance compared to SO-8?

The SOT457 offers smaller footprint (3.1 × 1.7 mm vs. 5.0 × 6.0 mm) but relies on PCB copper for heat dissipation. With 6 cm² drain pad, R_th(j-sp) is 15–20 K/W-comparable to SO-8 with thermal pad-making it viable for ≤1.7 W continuous power in compact layouts.