Nexperia USA Inc. PMN40UPE,115

Overview

PMN40UPE from NXP Semiconductors is a single P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for −20 V drain-source voltage, −6 A continuous drain current at 25 °C, and 37 mΩ typical R_DS(on) at V_GS = −4.5 V. It serves as a high-side load switch or relay driver in low-voltage power management circuits with fast switching and 4 kV HBM ESD protection.

For engineers reviewing the PMN40UPE datasheet, PMN40UPE pinout, PMN40UPE application, or PMN40UPE equivalent, this page delivers verified electrical parameters, thermal derating curves, gate charge behavior, junction-to-ambient thermal resistance (216 K/W), and real-world use context for compact DC-DC and battery-powered switching designs.

Technical Context

This device uses Trench MOSFET technology to achieve low threshold voltage (−0.45 to −0.95 V) and stable R_DS(on) across temperature-51 mΩ at 150 °C under V_GS = −4.5 V. Its symmetrical drain-terminal layout (Pins 1, 2, 5, 6) supports high-current PCB routing while minimizing parasitic inductance.

Dynamic performance includes 15.6 nC total gate charge, 2.8 nC gate-drain charge, and sub-100 ns switching times (t_d(on) = 8 ns, t_f = 34 ns) with 6 Ω external gate resistor. The integrated source-drain diode exhibits V_SD = −0.7 to −1.2 V at −1.2 A, enabling synchronous rectification in limited-duty-cycle topologies.

Key Specifications

Pinout & Package

SOT457 (TSOP6) plastic surface-mounted package with 6 leads; 3.0 mm × 2.5 mm footprint; drain-connected pins (1, 2, 5, 6) provide low-inductance, high-current path to PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with DMG2305UVT-7 and SI2301DDS-T1-GE3, PMN40UPE delivers superior R_DS(on)/Q_G trade-off in TSOP6, supporting higher continuous current (−6 A) and better thermal dissipation-critical for sustained 3–4 A load-switch operation without derating.

Availability

PMN40UPE is available at Aetrix Electronics and suitable for relay driver modules, high-speed line driver circuits, and high-side loadswitch implementations requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for PMN40UPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

PMN40UPE belongs to NXP's TrenchMOS family-designed specifically for high-efficiency, low-voltage power switching in space-constrained consumer and industrial electronics where logic-level gate drive and robust ESD tolerance are essential.

FAQ

What is the maximum continuous drain current for PMN40UPE at 100 °C ambient?

The maximum continuous drain current is −3.5 A at T_amb = 100 °C, per Table 5 Limiting Values. This reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures, assuming standard FR4 PCB mounting with 6 cm² drain pad.

Can PMN40UPE be driven directly by a 3.3 V microcontroller GPIO?

Yes. With a typical V_GS(th) of −0.7 V and guaranteed turn-on down to −0.45 V, PMN40UPE fully enhances at 3.3 V gate drive. R_DS(on) remains 37 mΩ at V_GS = −3.3 V (typical), ensuring low conduction loss without external level shifting.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is bounded by R_DS(on) = V_DS/I_D and P_tot = 500 mW (T_amb = 25 °C). For example, at V_DS = −10 V, maximum DC current is −50 mA to stay within 500 mW; higher currents require pulsed operation or active cooling.

How does the 4 kV HBM ESD rating impact board-level design?

The 4 kV Human Body Model ESD rating means PMN40UPE withstands typical handling and assembly electrostatic discharges without external protection. This eliminates discrete TVS diodes on gate or drain lines in non-harsh environments, reducing BOM count and PCB area.