Nexperia USA Inc. PMN40UPEAX

Overview

PMN40UPEAX from NXP Semiconductors is a single P-channel enhancement-mode Trench MOSFET in SOT457 (TSOP6) package, rated for -20 V V_DS, 4.7 A continuous drain current at 25 °C ambient, and 37 mΩ R_DS(on) at V_GS = -4.5 V and I_D = -3 A. It serves as a high-side load switch or relay driver in low-voltage DC power management circuits.

For engineers reviewing the PMN40UPEAX datasheet, PMN40UPEAX pinout, PMN40UPEAX application, or PMN40UPEAX equivalent, this device is selected for compact, low-threshold switching in space-constrained 3.3 V/5 V logic-controlled systems requiring fast turn-on and 4 kV HBM ESD robustness.

Technical Context

This P-channel MOSFET uses Trench MOSFET technology to achieve low gate threshold voltage (V_GS(th) = -0.45 to -0.95 V), enabling direct drive from standard CMOS logic outputs without level shifting. Its symmetrical drain-source diode supports bidirectional blocking in high-side configurations.

Thermal performance is optimized for FR4 PCB mounting with 6 cm² drain pad: R_th(j-sp) = 10–15 K/W and P_tot = 8330 mW at T_sp = 25 °C. Dynamic parameters include Q_G(tot) = 15.6–23 nC and t_f = 34 ns under 6 Ω gate resistance.

Key Specifications

Pinout & Package

Package: TSOP6 (SOT457), surface-mount plastic package with 6 leads, 3.0 mm × 2.5 mm footprint, 1.3 mm height, and exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG2305UVT-7 and SI2301DDS-T1-GE3, PMN40UPEAX delivers superior thermal handling via four drain pins and lower R_DS(on), making it optimal for 3–5 A high-side switching where 3.3 V compatibility and PCB heat dissipation are primary constraints.

Availability

PMN40UPEAX is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, high-side load switches, and switching circuits requiring stable component supply and long-term industrial availability.

Supply support for PMN40UPEAX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PMN40UPEAX belongs to NXP's TrenchMOS family-designed specifically for high-efficiency, low-voltage power switching in space-constrained consumer and industrial electronics.

FAQ

What is the maximum continuous drain current for PMN40UPEAX at 100 °C ambient temperature?

The maximum continuous drain current is -3.5 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limitations of the SOT457 package on standard FR4 PCB; actual current depends on copper area and airflow.

Can PMN40UPEAX be used in a low-side switching configuration?

Yes, but not recommended. As a P-channel device, its source must be tied to the higher potential; using it low-side forces the source to ground and gate to negative voltage for turn-on-requiring additional level-shifting circuitry and negating its low-threshold advantage.

Is the 4 kV ESD rating applicable to all pins or only the gate?

The 4 kV HBM rating applies to all pins, measured between each pin and all other pins collectively (per footnote [3] in Table 5). The gate is not singled out-the entire device meets this specification without external protection.

How does the R_DS(on) change at elevated junction temperatures?

R_DS(on) increases with temperature: typical value rises from 37 mΩ at 25 °C to 51–59 mΩ at 150 °C (Table 7). Figure 11 shows normalized R_DS(on) reaches ~1.25× room-temperature value at 125 °C junction temperature.