NXP Semiconductors PMN45EN,135

Overview

PMN45EN from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ logic-level power MOSFET in SOT457 (TSOP6) package, rated for 30 V V_DS, 5.2 A I_D (DC, T_sp = 25 °C), and 40 mΩ R_DS(on) at V_GS = 10 V / I_D = 3 A - optimized for battery-powered motor control and DC-DC converter driver stages.

For engineers reviewing the PMN45EN datasheet, PMN45EN pinout, PMN45EN application, or PMN45EN equivalent, this page delivers verified electrical parameters, validated TSOP6 terminal mapping, confirmed logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), and real-world use cases in notebook load switching and set-top box power supplies.

Technical Context

This discrete MOSFET uses TrenchMOS™ technology to achieve low R_DS(on) and fast switching with minimal gate charge: Q_g(tot) = 6.1 nC at V_DD = 15 V, V_GS = 4.5 V, I_D = 5 A. Its 1.75 W total power dissipation and 70 K/W junction-to-solder-point thermal resistance support thermally constrained PCB layouts.

The device features a source-drain diode with V_SD = 0.75–1.2 V at I_S = 1.7 A and exhibits stable R_DS(on) over temperature (normalized factor ≤2.0 up to 150 °C), enabling reliable operation in ambient temperatures up to +85 °C with appropriate board thermal design.

Key Specifications

Pinout & Package

PMN45EN is housed in a plastic surface-mount SOT457 (TSOP6) package - 6-lead, 1.3 mm × 3.0 mm footprint, 1.1 mm height - designed for automated assembly and high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN3026LSD-13 and SI2302DS-T1-GE3, the PMN45EN delivers optimal balance of 30 V rating, 42 mΩ R_DS(on) at 4.5 V, and compact TSOP6 footprint - making it uniquely suitable for space-limited, battery-operated 12–24 V systems requiring logic-level gate drive.

Availability

PMN45EN is available at Aetrix Electronics and suitable for battery-powered motor control, notebook load switching, and DC-DC converter driver applications requiring stable component supply across industrial and consumer electronics production cycles.

Supply support for PMN45EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT markets, with roots in Philips' pioneering semiconductor division.

The PMN45EN belongs to NXP's legacy TrenchMOS™ logic-level power MOSFET family, engineered specifically for high-efficiency, low-voltage switching in portable and space-constrained power management systems.

FAQ

What is the maximum continuous drain current for PMN45EN at 70 °C solder point temperature?

The PMN45EN supports 4.2 A continuous drain current (I_D) at T_sp = 70 °C and V_GS = 10 V, as specified in Table 3 (Limiting Values). This derating reflects thermal limits of the SOT457 package and must be applied when ambient or board temperatures exceed 25 °C - ensuring safe operation within the 150 °C junction temperature limit. Always verify actual board thermal performance using Figure 2.

Does PMN45EN support 3.3 V logic-level gate drive?

Yes, the PMN45EN is explicitly characterized for 4.5 V gate drive (R_DS(on) = 42–50 mΩ at I_D = 2.8 A), and its V_GS(th) range of 1.0–2.0 V guarantees turn-on with 3.3 V GPIOs. However, full enhancement requires sufficient gate charge delivery - ensure driver can supply ≥6.1 nC total charge with low impedance to minimize switching losses in the PMN45EN.

What is the thermal resistance from junction to solder point for PMN45EN?

The PMN45EN has a maximum thermal resistance R_th(j-sp) of 70 K/W when mounted on a metal-clad board, per Table 4. This value applies to transient conditions and assumes proper copper pour under drain pins (1, 2, 5, 6). For steady-state design, use Figure 1 to determine power derating based on measured solder point temperature - critical for sustained 5 A operation.

Can PMN45EN be used as a synchronous rectifier in a flyback converter?

Yes, the PMN45EN is suitable as a secondary-side synchronous rectifier due to its low V_SD (0.75–1.2 V at I_S = 1.7 A), fast switching (t_f = 16 ns), and low Q_gd (2.35 nC), which minimizes Miller-induced shoot-through risk. Its 30 V rating supports typical 5–12 V output rails; always implement gate timing control to avoid cross-conduction with the primary switch.

Is there an official replacement or second-source part for PMN45EN?

NXP does not list a direct replacement for PMN45EN; the part remains in active production per NXP's product change notifications. While alternatives like DMN3026LSD-13 and SI2302DS-T1-GE3 offer comparable functions, they differ in package, R_DS(on), and voltage rating - no pin-compatible or drop-in substitute exists. Customers should consult NXP's Product Change Notification (PCN) database for lifecycle status updates specific to PMN45EN.