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NXP Semiconductors PMN45EN,165
- Part No.:
- PMN45EN,165
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMN45EN,165.pdf
- Description:
- MOSFET N-CH 30V 5.2A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,248
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Product details
Overview
PMN45EN from Nexperia is an N-channel enhancement-mode TrenchMOS™ logic-level power MOSFET in SOT457 (TSOP6) package, rated for 30 V VDS, 5.2 A ID (DC at Tsp = 25 °C), and 40 mΩ RDS(on) at VGS = 10 V / ID = 3 A. It serves as a high-speed load switch in battery-powered systems including notebook computers and DC-DC converter driver stages.
For engineers reviewing the PMN45EN datasheet, PMN45EN pinout, PMN45EN application, or PMN45EN equivalent, key selection criteria include its low 1.5 V typical gate threshold voltage, 42–50 mΩ RDS(on) at 4.5 V drive, fast 14 ns turn-on delay, and surface-mount TSOP6 footprint optimized for space-constrained power management layouts.
Technical Context
The PMN45EN employs TrenchMOS™ technology to achieve enhanced conduction efficiency and switching speed over planar MOSFETs. Its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
Thermal performance is defined relative to solder point temperature (Tsp), with Rth(j-sp) = 70 K/W and derating curves showing 100% Ptot only at Tsp ≤ 25 °C. Safe operating area (SOA) is characterized up to 100 ms pulses, supporting transient load demands in motor control and power supply applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - supports 24 V rail systems with margin against transients |
| ID (DC) | 5.2 A at Tsp = 25 °C - delivers continuous load current for medium-power switching nodes |
| RDS(on) | 42–50 mΩ at VGS = 4.5 V / ID = 2.8 A - enables efficient operation from standard logic-level drivers |
| Qg(tot) | 6.1 nC total gate charge - ensures fast switching with low drive power demand |
| td(on)/tf | 14 ns / 16 ns - supports high-frequency PWM in DC-DC converters up to ~1 MHz |
| VGS(th) | 1.0–2.0 V - guarantees reliable turn-on with 3.3 V GPIO or low-voltage controllers |
| Ptot | 1.75 W at Tsp = 25 °C - requires thermal design attention on PCB copper area and solder point cooling |
Pinout & Package
SOT457 (TSOP6) is a 6-lead plastic surface-mount package with exposed drain pads for thermal enhancement. Pin 1–2–5–6 are internally connected to drain; Pin 3 is gate; Pin 4 is source - enabling dual-drain configuration for paralleling or high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Common high-side connection; electrically tied - used for heat sinking and current sharing across four pins |
| 3 | Gate (G) | Control input; low 1.5 V typical threshold enables direct 3.3 V MCU drive without buffer stage |
| 4 | Source (S) | Reference node for gate drive; connects to ground or low-side return path in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ process | Reduces RDS(on) per die area by ~30% vs. planar MOSFETs - improves power density in compact designs |
| Logic-level gate drive | VGS(th) = 1.0–2.0 V - eliminates need for gate driver ICs in 3.3 V/5 V control environments |
| Fast switching | td(on) = 14 ns, tf = 16 ns - minimizes switching losses in high-frequency DC-DC topologies |
| Low Qgd/Qgs ratio | 2.35 nC / 1.7 nC = 1.38 - suppresses Miller-induced shoot-through risk in half-bridge configurations |
| Integrated body diode | VSD = 0.75–1.2 V at IS = 1.7 A - supports synchronous rectification and freewheeling in buck converters |
Applications
| Battery-Powered Motor Control | Notebook Computer Load Switch |
|---|---|
|
Use Scenario: Driving small DC motors (e.g., cooling fans, HDD spindles) in portable devices powered by single-cell Li-ion (3.0–4.2 V). IC Role / Device Role: Low-side switch controlling motor current path to ground. Use Value: 42 mΩ RDS(on) at 4.5 V gate drive ensures >90% efficiency at 2 A load, minimizing battery drain and self-heating. |
Use Scenario: Enabling/disabling auxiliary rails (e.g., USB port power, display backlight) in ultra-thin notebooks. IC Role / Device Role: High-side load switch isolating downstream circuits during sleep mode. Use Value: 1.5 V typical VGS(th) allows clean turn-on with 3.3 V system power manager outputs, reducing BOM count. |
| Set-Top Box Power Supply | DC-DC Converter Driver |
|
Use Scenario: Secondary-side synchronous rectification in 12 V input, 5 V/3.3 V output flyback or forward converters. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes. Use Value: 0.75 V typical VSD and low Qg reduce conduction and switching losses, improving efficiency by 2–3% over diode solutions. |
Use Scenario: High-frequency (500 kHz–1 MHz) half-bridge driver stage in point-of-load (POL) converters for SoC core supplies. IC Role / Device Role: Upper or lower switch in discrete half-bridge topology. Use Value: Fast 14 ns td(on) and 16 ns tf enable precise dead-time control, minimizing cross-conduction losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | 30 V VDS, 5.8 A ID, 25 mΩ RDS(on) @ 10 V - lower on-resistance but higher gate charge (10.5 nC) | Better conduction loss at high VGS; less suitable for 3.3 V-only drive due to 1.8 V max VGS(th) | Prefer when board uses 5 V gate drive and thermal headroom exists for higher Qg-related losses |
| SI2305DS-T1-GE3 | 30 V VDS, 4.1 A ID, 55 mΩ RDS(on) @ 4.5 V - higher on-resistance, smaller SOT-23 package | Lower current rating and no multi-pin drain; limited thermal capability (Rth(j-a) ≈ 150 K/W) | Select only for space-constrained, low-current (<2 A) loads where PCB area is critical and thermal budget is relaxed |
Compared with PMN45EN, DMN3025LSD-13 offers lower conduction loss but demands more gate drive energy, while SI2305DS-T1-GE3 trades performance for footprint reduction - making PMN45EN the balanced choice for 2–5 A logic-level switching with thermal and drive flexibility.
Availability
PMN45EN is available at Aetrix Electronics and suitable for battery-powered motor control, notebook computer load switching, and DC-DC converter driver applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for PMN45EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business and headquartered in Nijmegen, Netherlands.
The PMN45EN belongs to Nexperia's TrenchMOS™ logic-level FET product line, engineered specifically for high-efficiency, space-constrained power switching in portable and computing applications where low gate drive voltage and fast response are essential.
FAQ
What is the maximum continuous drain current for PMN45EN at 70 °C solder point temperature?
The PMN45EN supports 4.2 A continuous drain current (ID) at Tsp = 70 °C with VGS = 10 V, as specified in the limiting values table. This derated value reflects thermal constraints of the SOT457 package and must be applied in thermal designs where ambient or PCB heating exceeds 25 °C - the PMN45EN datasheet provides normalized derating curves for precise layout-based current allocation.
Does PMN45EN have a built-in body diode, and what is its forward voltage?
Yes, the PMN45EN integrates a source-drain body diode with a typical forward voltage (VSD) of 0.75 V at IS = 1.7 A and VGS = 0 V. This diode enables freewheeling current paths in inductive loads and supports synchronous rectification in DC-DC converters - its 1.2 V maximum VSD ensures predictable reverse recovery behavior under switching conditions.
Can PMN45EN be driven directly by a 3.3 V microcontroller GPIO pin?
Yes, the PMN45EN can be driven directly by a 3.3 V microcontroller GPIO pin due to its logic-level gate threshold: VGS(th) is specified from 1.0 V to 2.0 V, with 1.5 V typical at ID = 1 mA. At 3.3 V gate drive, the device achieves full enhancement - delivering 42–50 mΩ RDS(on) at 2.8 A, making it suitable for robust low-voltage switching without external level shifters or buffers.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMN45EN?
The PMN45EN has a maximum thermal resistance of 70 K/W from junction to solder point (Rth(j-sp)) when mounted on a metal-clad board, as defined in Table 4 of the datasheet. This parameter is critical for calculating junction temperature rise above the PCB solder point - for example, at 3 A and 42 mΩ, power dissipation is ~378 mW, resulting in ~26.5 °C rise above Tsp under ideal mounting conditions.
Is PMN45EN RoHS compliant and halogen-free?
Yes, the PMN45EN is RoHS compliant and halogen-free, consistent with Nexperia's environmental policy and manufacturing standards. The device meets EU Directive 2011/65/EU (RoHS 2) and IEC 61249-2-21 for bromine and chlorine content, with full compliance documentation available through Nexperia's official product change notifications and material declarations.
PMN45EN,165 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 4.5 V
- Vgs (Max):
- 20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 495 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.75W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMN45EN,165 FAQ
1.How can I place an order for PMN45EN,165 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMN45EN,165 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMN45EN,165 reliable?
The price and inventory of PMN45EN,165 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMN45EN,165 is usually 5 days.
3.What payment methods are accepted for PMN45EN,165?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMN45EN,165 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMN45EN,165?
PMN45EN,165 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMN45EN,165 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMN45EN,165?
For technical support, including PMN45EN,165 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMN45EN,165 requirements.
6.How does Aetrix verify that PMN45EN,165 is sourced from the original manufacturer or authorized distributors?
All PMN45EN,165 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMN45EN,165 meets industry standards.
7.What is the process for return or replacement of PMN45EN,165?
All PMN45EN,165 units undergo pre-shipment inspection (PSI). If there is an issue with PMN45EN,165, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMN45EN,165 part is unused and in its original packaging.
Return procedure for PMN45EN,165:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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